J. Limb

发表

A 22nm high performance embedded DRAM SoC technology featuring tri-gate transistors and MIMCAP COB

R. Brain, N. Lindert, J. Steigerwald, 2013, 2013 Symposium on VLSI Technology.

Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD

R. Dupuis, J. Limb, J. Ryou, 2007, IEEE Photonics Technology Letters.

Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors

B. Chu-Kung, P. Asbeck, N. Holonyak, 2006 .

Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes

R. Dupuis, J. Limb, F. Ponce, 2008 .

Nitride-Based Green Light-Emitting Diodes With Various p-Type Layers

R. Dupuis, J. Limb, J. Ryou, 2007, Journal of Display Technology.

III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge

R. Dupuis, K. Evans, J. Limb, 2008 .

Al$_{x}$Ga$_{1-x}$N Ultraviolet Avalanche Photodiodes Grown on GaN Substrates

R. Dupuis, K. Evans, J. Limb, 2007, IEEE Photonics Technology Letters.

GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

R. Dupuis, J. Limb, J. Ryou, 2006 .

Al $_{x}$ Ga $_{1-x}$ N Ultraviolet Avalanche Photodiodes Grown on GaN Substrates

R. Dupuis, K. Evans, J. Limb, 2007 .

Effect of thermal annealing induced by p-type layer growth on blue and green LED performance

R. Dupuis, J. Limb, J. Ryou, 2006 .

Effect of Silicon Doping in the Quantum-Well Barriers on the Electrical and Optical Properties of Visible Green Light-Emitting Diodes

R. Dupuis, J. Limb, J. Ryou, 2008, IEEE Photonics Technology Letters.

Green light‐emitting diodes with p‐InGaN:Mg grown on c ‐plane sapphire and GaN substrates

R. Dupuis, J. Limb, J. P. Liu, 2009 .

High performance GaN pin rectifiers grown on free-standing GaN substrates

R. Dupuis, J. Limb, J. Ryou, 2006 .

GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates

R. Dupuis, J. Limb, J. Ryou, 2008 .

AlGaN/GaN HBTs using regrown emitter

S. Denbaars, H. Xing, L. McCarthy, 1999 .

Epitaxial Growth and Device Design Optimization of Full-Vertical GaN p-i-n Rectifiers

R. Dupuis, J. Limb, J. Ryou, 2007 .

III-N Epitaxial Growth for Nitride Devices

R. Dupuis, J. Limb, Peng Li, 2005 .

Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors

R. Dupuis, K. Evans, J. Limb, 2007 .

Performance Evaluation of III-Nitride Avalanche Photodiodes Grown on SiC and GaN Substrates

R. Dupuis, J. Limb, J. Ryou, 2007 .

High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage

S. Denbaars, H. Xing, L. McCarthy, 2000 .

High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

P. Asbeck, R. Dupuis, J. Limb, 2007 .

Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers

R. Dupuis, J. Limb, J. P. Liu, 2008 .

Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes

Wonseok Lee, Russell D. Dupuis, T. Chung, 2006 .

GaN HBT: toward an RF device

Mark J. W. Rodwell, James S. Speck, David L. Pulfrey, 2001 .

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

Michael Wraback, Edward A. Preble, Shyh-Chiang Shen, 2006 .

Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates

R. Dupuis, J. Limb, J. Ryou, 2007 .

Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design

B. Chu-Kung, P. Asbeck, R. Dupuis, 2006 .

Growth of InGaN HBTs by MOCVD

P. Asbeck, R. Dupuis, M. Feng, 2006 .

Design, fabrication and characterization of III-nitride pn junction devices

J. Limb, 2007 .

Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes

R. Dupuis, J. Limb, F. Ponce, 2007 .

Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes

R. Dupuis, J. Limb, J. Ryou, 2007 .

Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition

R. Dupuis, J. Limb, F. Ponce, 2008 .

Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates

Edward A. Preble, Russell D. Dupuis, Fernando Ponce, 2008 .