N. Inoue

发表

A novel cylinder-type MIM capacitor in porous low-k film (CAPL) for embedded DRAM with advanced CMOS logics

Y. Hayashi, H. Shirai, T. Hase, 2010, 2010 International Electron Devices Meeting.

Nitrogen Ion Implantation into α‐SiC Epitaxial Layers

T. Kimoto, N. Inoue, 1997 .

Comprehensive Chemistry Designs in Porous SiOCH Film Stacks and Plasma Etching Gases for Damageless Cu Interconnects in Advanced ULSI Devices

T. Takeuchi, M. Tada, N. Inoue, 2008, IEEE Transactions on Semiconductor Manufacturing.

Robust porous SiOCH/Cu interconnects with ultrathin sidewall protection liners

T. Takeuchi, M. Tada, N. Inoue, 2006, IEEE Transactions on Electron Devices.

Overview of Materials Processing and Properties of Lanthanum-Based High-k Dielectrics

Daniel J. Lichtenwalner, Jesse S. Jur, Angus I. Kingon, 2007 .

Highly reliable BEOL-transistor with oxygen-controlled InGaZnO and Gate/Drain offset design for high/low voltage bridging I/O operations

M. Hane, N. Inoue, Y. Hayashi, 2011, 2011 International Electron Devices Meeting.

A novel BEOL transistor (BETr) with InGaZnO embedded in Cu-interconnects for on-chip high voltage I/Os in standard CMOS LSIs

Y. Hayashi, N. Inoue, N. Furutake, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Robust Low Oxygen Content Cu Alloy for Scaled-Down ULSI Interconnects Based on Metallurgical Thermodynamic Principles

Y. Hayashi, T. Onodera, S. Saito, 2009, IEEE Transactions on Electron Devices.

Effect of imprint on operation and reliability of ferroelectric random access memory (FeRAM)

Y. Hayashi, N. Inoue, 2001 .

Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n+-p junction

H. Matsunami, T. Kimoto, N. Inoue, 1997 .

Characterization of Low-k/Cu Damascene Structures Using Monoenergetic Positron Beams

A. Uedono, Y. Hayashi, K. Eguchi, 2009 .

Smart Fabrication Process of an Ir IrO x Top-Electrode on a PZT Film for Reliable FeRAM

Y. Hayashi, N. Inoue, 2004 .

PZT MIM capacitor with oxygen-doped Ru-electrodes for embedded FeRAM devices

Y. Hayashi, N. Inoue, N. Furutake, 2005, IEEE Transactions on Electron Devices.

Microstructure Control of Low-Loss Ni–Zn Ferrite by Low-Temperature Sputtering for On-Chip Magnetic Film

Y. Hayashi, K. Hijioka, N. Inoue, 2009 .

Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films

A. Kingon, J. Jur, D. Lichtenwalner, 2006 .

Highly Reliable Thin MIM Capacitor on Metal (CoM) Structure with Vertical Scalability for Analog/RF Applications

Y. Hayashi, M. Furumiya, N. Inoue, 2007, 2007 IEEE International Electron Devices Meeting.

High Performance High-k MIM Capacitor with Plug-in Plate (PiP) for Power Delivery Line Hige-Speed MPUs

Y. Hayashi, T. Onodera, A. Tanabe, 2006, 2006 International Interconnect Technology Conference.

Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure

Y. Hayashi, T. Onodera, F. Ito, 2012 .

Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors

Y. Hayashi, M. Furumiya, N. Inoue, 2007 .

A Novel Multilayered Ni–Zn-Ferrite/TaN Film for RF/Mobile Applications

Y. Hayashi, N. Inoue, N. Furutake, 2010 .

Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-k Films

Y. Hayashi, N. Inoue, I. Kume, 2011 .

Precise Taper-Angle-Control of Via Holes for Reliable Scaled-Down Low-k/Cu Interconnects

Y. Hayashi, N. Inoue, I. Kume, 2010 .

Characterization of Low-k SiOCH Layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams

A. Uedono, Y. Hayashi, K. Eguchi, 2009, 2009 IEEE International Interconnect Technology Conference.

Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-k Films

Y. Hayashi, N. Inoue, I. Kume, 2011 .

A 65nm-node, Cu interconnect technology using porous SiOCH film (k=2.5) covered with ultra-thin, low-k pore seal (k=2.7)

Y. Hayashi, T. Onodera, S. Saito, 2003, IEEE International Electron Devices Meeting 2003.

High tolerance operation of 1T/2C FeRAMs for the variation of cell capacitors characteristics

Hiroki Koike, Yoshihiro Hayashi, J. Yamada, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Compositional design of Pb(Zr, Ti)O/sub 3/ for highly reliable ferroelectric memories

Y. Hayashi, N. Inoue, T. Takeuchi, 2002 .

Crystal-orientation controlled PZT FeRAM-capacitors using RF magnetron sputtering with 12"/spl phi/ single target

Y. Hayashi, N. Inoue, Y. Maejima, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Effects of the Metallurgical Properties of Upper Cu Film on Stress-Induced Voiding (SIV) in Cu Dual-Damascene Interconnects

Y. Hayashi, N. Inoue, N. Furutake, 2005 .

Low thermal-budget process of sputtered-PZT capacitor over multilevel metallization

Y. Hayashi, N. Inoue, T. Nakura, 2003 .

Material and Structure Designs for Reliable Quad-Flat-Package for Scaled-Down Ultralarge-Scale Integrations With Porous Low-$k/{\rm Cu}$ Interconnects

Yoshihiro Hayashi, Masayoshi Tagami, Fuminori Ito, 2013, IEEE Transactions on Components, Packaging and Manufacturing Technology.

High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes

A. Kingon, V. Misra, J. Jur, 2006 .

Formation of 0.3-nm-high stepped polymer surface by thermal nanoimprinting

S. Kaneko, M. Yoshimoto, N. Inoue, 2014 .

Highly-reliable molecular-pore-stack (MPS)-SiOCH/Cu interconnects with CoWB metal-cap films

Y. Hayashi, N. Inoue, N. Furutake, 2009, 2009 IEEE International Interconnect Technology Conference.

Low thermal-budget fabrication of sputtered-PZT capacitor on multilevel interconnects for embedded FeRAM

Y. Hayashi, Naoya Inoue, Y. Hayashi, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Analysis of Interface States in LaSixOy Metal–Insulator–Semiconductor Structures

A. Kingon, J. Jur, D. Lichtenwalner, 2007 .

Deep Interface States in SiO 2/p-type α-SiC Structure

H. Matsunami, T. Kimoto, N. Inoue, 1997 .