B. Wakefield

发表

Optical gain spectrum of GeO2-SiO2 Raman fibre amplifiers

D. L. Williams, S. Davey, B. Ainslie, 1989 .

The generation of point defects in GaAs by electron-hole recombination at dislocations

B. Wakefield, P. Hutchinson, P. Dobson, 1978 .

The identification of copper in long lived GaAlAs double heterostructure lasers by means of electron probe x-ray microanalysis

A. P. Skeats, M. Robertson, B. Wakefield, 1983 .

M. Robertson, B. Wakefield, P. Hutchinson, 1981 .

The observation of melt carryover in the active layer of LPE GaAs/GaAlAs double‐heterostructure laser material

B. Wakefield, 1978 .

A photoluminescence study of Ga1-xInxAs/Al1-yInyAs quantum wells grown by MBE

S. Davey, B. Wakefield, E. Scott, 1988 .

The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy

B. Wakefield, G. Davies, T. Kerr, 1984 .

Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy

S. Davey, B. Wakefield, G. Davies, 1988 .

Characterisation of Ga1−xInxAs/Al1−yInyAs multiple quantum wells by Raman scattering

S. Davey, B. Wakefield, E. Scott, 1987 .

Raman scattering in Ga0.47In0.53As/InP superlattices grown by metalorganic vapor phase epitaxy

A. W. Nelson, S. Davey, B. Wakefield, 1987 .

Anomalous electrical and optical characteristics of GaAs/AlxGa1−xAs heterostructure materials

B. Wakefield, R. M. Redstall, T. Ambridge, 1979 .

The fabrication, assessment and optical properties of high-concentration Nd3+- and Er3+-doped silica-based fibres

Steven T. Davey, Benjamin James Ainslie, S. Davey, 1988 .

Nonradiative regions in GaInAsP/InP double heterostructure laser material: correlation with dislocation clusters in the substrates

J. C. Regnault, B. Wakefield, C. R. Elliott, 1982 .

The temperature dependence of degradation mechanisms in long‐lived (GaAl)As DH lasers

B. Wakefield, D. Newman, D. H. Newman, 1978 .

States of 9 Be from the beta-decay of 9 Li

B. Wakefield, D. Wilkinson, B. Macefield, 1969 .

A study of the 6Li(p, n)6Be reaction

B. Wakefield, B. Macefield, 1968 .

Interference between nuclear and Coulomb excitation of 114Cd by alpha particles

B. Wakefield, I. Naqib, R. P. Harper, 1970 .

Measurement of the static quadrupole moments of the first 2+ states in 104, 106Pd and 130Te

B. Wakefield, I. Naqib, R. P. Harper, 1970 .

Negative parity states of 109Ag in the intermediate-coupling unified nuclear model

B. Wakefield, I. Naqib, D. J. Thomas, 1973 .

Measurement of the static quadrupole moments of the first 2+ states of 108, 110Pd and 110Cd

B. Wakefield, I. Naqib, R. P. Harper, 1971 .

Measurement of the quadrupole moments of the first 3/2- and 5/2- states of 109Ag by Coulomb excitation

B. Wakefield, I. Hall, D. J. Thomas, 1973 .

QUADRUPOLE MOMENTS OF THE FIRST $sup 3$/$sub 2$$sup -$ AND $sup 5$/$sub 2$$sup -$ STATES OF $sup 109$Ag AND THE PARTICLE--VIBRATOR COUPLING MODEL.

B. Wakefield, I. Hall, D. J. Thomas, 1972 .

Characterization of semi‐insulating liquid encapsulated Czochralski GaAs by cathodoluminescence

M. H. Lyons, B. Wakefield, C. R. Elliott, 1984 .

Direct energy gap of Al1−xInxAs lattice matched to InP

D. Wood, B. Wakefield, G. Davies, 1984 .

Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy

B. Wakefield, G. Davies, D. Andrews, 1988 .

Strain‐enhanced luminescence degradation in GaAs/GaAlAs double‐heterostructure lasers revealed by photoluminescence

B. Wakefield, 1979 .

The 1.36 eV radiative transition in InP: its dependence on growth conditions in MBE and MOCVD material

A. W. Nelson, B. Wakefield, L. Eaves, 1984 .