S. W. Wang

InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

Y. Yeo, A. Afzalian, M. Holland, 2016, 2016 IEEE Symposium on VLSI Technology.

InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

B. Duriez, I. Thayne, M. Passlack, 2013, 2013 IEEE International Electron Devices Meeting.

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS

C. Hsieh, C. Diaz, I. Thayne, 2012, IEEE Electron Device Letters.

InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

W. Hsu, M. Holland, E. Lind, 2013 .

InAs FinFETs With $\textrm {H}_{\mathrm {fin}}=20$ nm Fabricated Using a Top–Down Etch Process

Y. Yeo, X. Li, M. Holland, 2016, IEEE Electron Device Letters.