D. Thompson

发表

Enhanced bandgap blue-shift in InGaAsP multiple-quantum-well laser structures by low-temperature-grown InP

B. J. Robinson, A. S. Lee, D. Thompson, 2000 .

Spectral function and responsivity of resonant tunneling and superlattice quantum dot infrared photodetectors using Green’s function

M. Deen, D. Thompson, M. Naser, 2007 .

Etching of InP surface oxide with atomic hydrogen produced by electron cyclotron resonance

B. J. Robinson, D. Thompson, P. Hofstra, 1995 .

The influence of incident flux dependent radiation enhanced diffusion on composition changes of sputtered binary solids

G. Carter, D. Thompson, R. Collins, 1979 .

The consequence of lateral composition modulation on the anisotropic emission for transitions to the heavy hole subbands in InGaAs quantum wells

D. Thompson, J. Czaban, 2008 .

The influence of lateral composition modulation on the photoluminescence of tensile strained InGaAs quantum wells at room temperature

D. Thompson, J. Czaban, 2006 .

Compositional variations in InGaAsP films grown on patterned substrates

D. Thompson, G. Weatherly, C. Mullan, 1997 .

Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates

B. J. Robinson, D. Thompson, R. LaPierre, 1995 .

Spike effects in heavy-ion sputtering of Ag, Au and Pt thin films☆

D. Thompson, S. Johar, 1979 .

Semiconductor optical amplifiers grown on a metamorphic substrate for long wavelength applications

D. Thompson, J. Czaban, 2010, Nanotechnology.

Thermoelectric properties of BiSb alloys

D. Thompson, A. Ibrahim, 1985 .

Ion beam mixing to produce Bi/Sb alloys for thin film thermoelectric devices

D. Thompson, A. Ibrahim, 1985 .

Growth and characterization of GaAsSb metamorphic samples on an InP substrate

B. J. Robinson, O. Hulko, M. Deen, 2006 .

Sputtering of frozen Xenon by keV heavy ions

D. Thompson, J. Davies, D. Stevanović, 1984 .

Ion Implanted Solar Cells

J. B. Neilson, J. Shewchun, D. Thompson, 1977 .

High density cascade effects

D. Thompson, 1981 .

The response of semiconductor optical amplifiers containing lateral composition modulation in the quantum wells

D. Thompson, J. Czaban, 2008 .

Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design

B. J. Robinson, D. Thompson, L. Martinu, 2000 .

Disorder production in ion implanted gallium arsenide at 40 K

D. Thompson, A. Ibrahim, G. Carter, 1983 .

Disorder production and amorphisation in ion implanted silicon

D. Thompson, C. Christodoulides, G. Carter, 1980 .

Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields

J. Simmons, D. Thompson, F. Pollak, 1996 .

High-responsivity InGaAs/InP-based MSM photodetector operating at 1.3-μm wavelength

B. J. Robinson, J. Simmons, D. Thompson, 1996 .

Sampling optimization of Moiré geometrical phase analysis for strain characterization in scanning transmission electron microscopy.

D. Thompson, G. Botton, A. Pofelski, 2019, Ultramicroscopy.

Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers

B. J. Robinson, D. Thompson, G. Botton, 2009 .

Large Field of View Strain Characterization in a Scanning Transmission Electron Microscope Using a Designed Coherent Sampler

D. Thompson, G. Botton, A. Pofelski, 2019, Microscopy and Microanalysis.

Aberration-corrected STEM and EELS of semiconducting nanostructures

D. Thompson, G. Botton, S. Lazăr, 2011 .

Quantitative compositional profiles of enhanced intermixing in GaAs/AlGaAs quantum well heterostructures annealed with and without a SiO2 cap layer

O. Hulko, D. Thompson, J. Simmons, 2009 .

Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate on InP

B. J. Robinson, O. Hulko, J. Simmons, 2009 .

Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy.

B. J. Robinson, P. W. Smith, L. Qian, 1997, Optics letters.

Annealing of heavy ion cascade damage in silicon

L. M. Howe, D. Thompson, J. Davies, 1980 .

Solid Phase Epitaxy of Si 1-x Ge x on Si Strained Layers

B. J. Robinson, D. Thompson, P. Ferret, 1989 .

Observation of lomer-cottrell locks in SiGe strained layers

B. J. Robinson, D. Thompson, J. Baribeau, 1990 .

Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation

B. J. Robinson, D. Thompson, J. Baribeau, 1989 .

Implantation isolation in n-type InP bombarded with He + and B +

J. Simmons, D. Thompson, V. Sargūnas, 1995 .

Electrical properties of p‐type InGaAsP and InGaAs irradiated with He+ and N+

J. Simmons, D. Thompson, V. Sargūnas, 1995 .

High Resistivity in N-Type InP and InGaAsP by He + Ion Induced Amorphization.

J. Simmons, D. Thompson, J. Zhao, 1993 .

Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy

B. J. Robinson, D. Thompson, R. LaPierre, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

Spinodal-like decomposition of InGaAsP/InP grown by gas source molecular beam epitaxy

B. J. Robinson, D. Thompson, R. LaPierre, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

RIE of GaSb with an ECR Source Using Methane/Hydrogen Chemistry in an Argon Plasma

M. Deen, D. Thompson, F. M. Mohammedy, 2007 .

Evaluation of plasma and thermal sources for atomic hydrogen-assisted epitaxy of InP

B. J. Robinson, D. Thompson, R. LaPierre, 1998 .

Effect of noble gas plasmas on the growth of InP by gas-source molecular beam epitaxy

B. J. Robinson, D. Thompson, R. LaPierre, 1996 .

Hydrogen incorporation into Si‐doped InP deposited by gas‐source molecular beam epitaxy

D. Thompson, S. Zukotynski, R. Kruzelecky, 1995 .

Deuterium permeation in polycrystalline nickel pre-implanted with nickel and helium ions

S. Shi, D. Thompson, W. Smeltzer, 1992 .

Application of an extended linear cascade model to the sputtering of Ag, Au, and Pt by heavy atomic and molecular ions

D. Thompson, 1981 .

Nonlinear sputtering effects in thin metal films

D. Thompson, S. Johar, 1979 .

Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate

D. Thompson, S. Saha, D. Cassidy, 2014 .

Electrocatalysis of Pt-Fe alloys produced by ion beam mixing

D. Thompson, J. Davies, W. Smeltzer, 1990 .

Implantation of Ni thin films and single crystals with Ag ions

D. Thompson, W. Smeltzer, Pei-xuan Wang, 1985 .

Investigation of cross-hatch in In0.3Ga0.7As pseudo-substrates

D. Thompson, S. Saha, D. Cassidy, 2013 .

InAs quantum wire induced composition modulation in an In0.53Ga0.37Al0.10As barrier layer grown on an InP substrate

B. J. Robinson, D. Thompson, G. Botton, 2010 .

Control of dielectric cap induced band-gap shift in 1.55 μm laser structures

B. J. Robinson, D. Thompson, J. Wójcik, 2002 .

Experimental study of implantation‐induced disordering in InGaAsP strained multiple‐quantum‐well heterostructures

D. M. Bruce, J. Simmons, D. Thompson, 1994 .

Spontaneous oscillations in the InP-InGaAsP lasing optoelectronic switch (LOES)

J. Swoger, J. Simmons, D. Thompson, 1995 .

Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes

B. J. Robinson, O. Hulko, M. Deen, 2008 .

High energy He+ bombardment of n-type InP

J. Simmons, D. Thompson, V. Sargūnas, 1996 .

Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

B. J. Robinson, D. Thompson, J. Czaban, 2007 .

The effect of different proximity caps on quantum well intermixing in InGaAsP/InP QW structures

O. Hulko, D. Thompson, J. Czaban, 2006 .

Quantitative compositional analysis of quantum well intermixing using a low temperature MBE-grown InP cap layer

O. Hulko, J. Simmons, D. Thompson, 2006 .

Large angle differential scattering cross-sections for various ions (2 ⩽ Z1 ⩽ 10) in the 65–135 keV energy range

D. Thompson, J. Davies, W. Poehlman, 1981 .

Stopping powers for 20–140 keV H+ and He+ on Ni, Ag and Au

D. Thompson, J. Davies, P. Presunka, 1981 .

Light-ion neutralization behavior in the 25 to 150 keV range using a medium-energy ion-reflection spectrometer

D. Thompson, R. Bhattacharya, H. D. Barber, 1980 .

Stopping powers and backscattered charge fractions for 20–150 keV H+ and He+ on gold

D. Thompson, W. Poehlman, 1980 .

Tritium profiling using the T(d, 4He)n reaction

D. Thompson, P. T. Wan, J. Sawicki, 1986 .

ATTEMPTS TO REDUCE THE OXYGEN OVERPOTENTIAL OF Ni ANODES USING ION BEAM MIXING AND ION IMPLANTATION TECHNIQUES

D. Thompson, J. Davies, W. Smeltzer, 1982 .

Effect of ion implantation on the oxygen overpotential of Ni Anodes

D. Thompson, I. Tashlykov, J. Davies, 1981 .

Rutherford backscattering investigation of radiation damage effects on the leaching of sphene and sphene-based glass-ceramics

D. Thompson, E. Vance, D. Stevanović, 1989 .

Collision cascades in silicon

L. M. Howe, D. Thompson, H. Haugen, 1980 .

Computer simulation of ion bombardment collision cascades

D. Thompson, R. Walker, 1978 .

Rapid thermal annealing of ion implanted cdte

D. Thompson, S. Meikle, 1987 .

Ion beam mixing for ohmic contact formation ton-Type GaAs

D. Thompson, Zhao Jie, 1988 .

Ion implantation damage in CdS

D. Thompson, G. Carpenter, N. Parikh, 1986 .

The effect of aluminum ion implantation on the oxidation of an Fe-6 at.% Al alloy at 1173 K

D. Thompson, P. Smith, W. Smeltzer, 1987 .

10–16 MeV proton irradiation damage in iron and copper

D. Thompson, A. Omar, J. E. Robinson, 1979 .

Ion-beam mixing of Ni/Pd layers: I. Cascade mixing regime (low temperature)

J. A. Davies, D. Thompson, J. Davies, 1988 .

Comparison of ion beam mixing at room temperature and 40 K

B. Paine, M. Nicolet, D. Thompson, 1981 .

Ion-beam mixing of Ni/Pd layers: II. Thermally assisted regime (>500 K)

D. Thompson, J. Davies, W. Smeltzer, 1988 .

A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. finite range approximation

D. Thompson, R. Collins, G. Carter, 1981 .

Energy loss of He ions in solidified gases

W. Chu, D. Thompson, M. Braun, 1978 .

Stopping Cross Sections for 0.3‐ to 1.7‐MeV Helium Ions in Silicon and Silicon Dioxide

D. Thompson, W. D. Mackintosh, 1971 .

10–16 MeV proton irradiation of iron, zirconium and copper: Resistivity-dose measurements

D. Thompson, A. Omar, J. E. Robinson, 1979 .

Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge

D. Thompson, J. Davies, R. Walker, 1977 .

10–16 MeV proton irradiation of iron, zirconium and copper: isochronal anneal measurements

D. Thompson, A. Omar, I. Robinson, 1979 .

The effects of annealing on disorder preservation in ion implanted InP

G. Carter, M. Nobes, D. Thompson, 1987 .

Implantation and grain growth in ni thin films induced by Bi and Ag ions

D. Thompson, W. Smeltzer, Pei-xuan Wang, 1986 .

Defect production and stability in high-energy-density cascades in Ni

G. Carter, D. Thompson, W. Grant, 1985 .

Annealing studies of ion-implanted gaas in the 40–300 K range

G. Carter, D. Thompson, D. Stevanović, 1982 .

Anomalous surface damage in ion bombarded silicon from channelling-backscattering measurements

D. Thompson, H. Haugen, G. Carter, 1980 .

Contribution of strain effects toward the damage measured in semiconductors by channeling

D. Thompson, R. Walker, 1978 .

Energy spikes in Si and Ge due to heavy ion bombardment

D. Thompson, R. Walker, 1978 .

Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 K

D. Thompson, R. Walker, 1976 .

Channeling measurements of damage in ion bombarded semiconductors at 50° K

D. Thompson, R. Walker, 1976 .

Calculation of scattering and radiation damage parameters for 14 MeV neutrons and 10 TO 20 MeV protons on Fe, Ni, Cu, Zr, Nb, and Au

D. Thompson, A. Omar, J. E. Robinson, 1977 .

Inelastic stopping of medium energy light ions in silicon

D. Thompson, J. E. Robinson, R. Walker, 1977 .

Comparison of measured and calculated damage distributions for light keV ion bombardment of solid surfaces

D. Thompson, J. E. Robinson, 1976 .

Electron and neutron irradiation of boron and phosphorus-doped silicon at 80°K

D. Thompson, C. D. Clark, A. Fernandez, 1969 .

Nitrogen implantation into GaP: Damage and nitrogen location studies

J. Shewchun, D. Thompson, S. Johar, 1975 .

Nitrogen Implantation in SiC: Lattice Disorder and Foreign-Atom Location Studies

J. Shewchun, A. Campbell, D. Thompson, 1975 .

Deuterium permeation and diffusion in high-purity beryllium

D. Thompson, M. Riehm, W. Smeltzer, 1990 .

Low temperature radio frequency sputter deposition of TiN thin films using optical emission spectroscopy as process monitor

J. Simmons, D. Thompson, P. Mascher, 1994 .

Quantitative analysis of compositional changes in InGaAs∕InGaAsP quantum wells on GaAs induced by intermixing with a low temperature grown InGaP cap layer

O. Hulko, J. Simmons, D. Thompson, 2006 .

Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap

O. Hulko, A. S. Lee, J. Simmons, 2006 .

Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures

J. Simmons, D. Thompson, J. Wan, 1997 .

Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure

J. Simmons, D. Thompson, N. Puetz, 1997 .

Ion implantation induced compositional intermixing in the InGaAs/InP MQW system for wavelength shifted waveguides

J. Simmons, D. Thompson, J. Wan, 1995 .

Quantum well intermixing enhanced by InP grown by He-plasma assisted GaS source MBE

D. Thompson, Shanshan Zhang, B. Robinson, 2003 .

Probing the indium clustering in InGaAs∕GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy

G. Sȩk, J. Misiewicz, D. Thompson, 2007 .

Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure

D. Thompson, G. Botton, K. Cui, 2011 .

Stacking pattern of multi-layer InAs quantum wires embedded in In0.53Ga0.47−xAlxAs matrix layers grown lattice-matched on InP substrate

D. Thompson, G. Botton, K. Cui, 2010 .

Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm

J. Misiewicz, D. Thompson, R. Kudrawiec, 2006 .

Nitrogen implanted SiC: Correlation of channeling and electrical studies

A. Campbell, D. Thompson, M. Chan, 1976 .

Rapid thermal annealing of InAs∕GaAs quantum dots with a low-temperature-grown InGaP cap layer

O. Hulko, D. Thompson, P. Mascher, 2006 .

Refractory Metal Contacts to N-Type InP and InGaAs

J. Simmons, D. Thompson, D. Stevanović, 1993 .

Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant

M. Tirado, D. Thompson, R. LaPierre, 2010, Nanotechnology.

Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence

D. Thompson, D. Cassidy, B. Lakshmi, 1997 .

Desorption of ultraviolet‐ozone oxides from InP under phosphorus and arsenic overpressures

D. Thompson, P. Regreny, G. Hollinger, 1995 .

Growth mechanisms of III-V compounds by atomic hydrogen-assisted epitaxy

D. Thompson, R. LaPierre, B. Robinson, 1998 .

Reduction of composition modulation of InGaAsP grown by atomic-hydrogen-assisted epitaxy producing improved double-heterostructure laser performance

D. Thompson, R. LaPierre, B. Robinson, 1998 .

Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAs

J. Simmons, D. Thompson, D. L. Melville, 1993 .

Measurement of differential wall changes using surface probes in the Alcator-A tokamak

D. Thompson, E. Marmar, J. E. Robinson, 1979 .

Molecular-beam epitaxially grown InP/InGaAsP heterostructure for inversion-channel devices

J. Swoger, J. Simmons, D. Thompson, 1993 .

Thin-film alloys of Bi_1−x Sb_x produced by ion-beam mixing and their thermoelectric properties

D. Thompson, J. Davies, A. Ibrahim, 1987 .

Scattering of light keV ions from amorphous and crystalline solid surfaces

D. Thompson, J. E. Robinson, K. Kwok, 1976 .

The Determination of Surface Contamination on Silicon by Large Angle Ion Scattering

D. Thompson, H. D. Barber, W. D. Mackintosh, 1969 .

Thermal desorption analysis of beryllium tile pieces from JET

D. Thompson, J. Coad, R. Macaulay-Newcombe, 1998 .

The effects of surface contamination on absorption and desorption of deuterium in beryllium and beryllium oxide

D. Thompson, R. Macaulay-Newcombe, 1994 .

Isochronal annealing ofpandn-type silicon irradiated at 80°K

J. Thomson, D. Thompson, C. D. Clark, 1969 .

Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP

M. Mackenzie, A. S. Lee, D. Thompson, 2001 .

Strain‐induced electrically active stoichiometric defects in InAsyP1−y deposited onto (100) InP by gas‐source molecular beam epitaxy

D. Thompson, R. Kruzelecky, C. Qiu, 1994 .

Thermal absorption and desorption of deuterium in beryllium and beryllium oxide

D. Thompson, W. Smeltzer, R. Macaulay-Newcombe, 1992 .

Deuterium diffusion, trapping and release in ion-implanted beryllium

D. Thompson, W. Smeltzer, R. Macaulay-Newcombe, 1991 .

Ion beam mixing for ohmic contact formation to n-type GaAs

D. Thompson, Zhao Jie, 1989 .

A comparison between electron and ion damage in quartz

J. DeNatale, D. Thompson, E. Vance, 1990 .

Thermal desorption of deuterium from polycrystalline nickel pre-implanted with helium

D. Thompson, W. Smeltzer, E. Abramov, 1991 .

The interdigital coplanar waveguide: a new low-impedance micromachinable planar structure

R. L. Rogers, D. Thompson, R. Rogers, 1998 .

Photoreflectance study of changes in the QW profile of 1.55-micrometer laser structure induced by SiO2 cap layers

G. Sȩk, J. Misiewicz, D. Thompson, 2003 .

Ion beam analysis of deuterium-implanted Al2O3 and tungsten

D. Thompson, R. Macaulay-Newcombe, 1998 .

Growth and characterization of silicon nitride films produced by remote microwave plasma chemical vapor deposition

J. Simmons, D. Thompson, T. Jackman, 1991 .

Spectral function of InAs∕InGaAs quantum dots in a well detector using Green’s function

M. J. Deen, Mohamed A. Naser, M. Deen, 2006 .

InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V‐grooved InP substrates with (111)A facet sidewalls

B. J. Robinson, John G. Simmons, J. Simmons, 1995 .

Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy

D. Thompson, R. LaPierre, B. Robinson, 1996 .

Flameless Atomic Absorption Spectroscopy of Plasma Chromium

D. Thompson, D. Thompson, 1980, Annals of clinical biochemistry.

Influence of the bombarding angle on the sputtering yield of heavy atomic and molecular ion bombardment of Ag and Auf

D. Thompson, S. Johar, 1981 .

Particle emission from metal surfaces irradiated with MeV protons

D. Thompson, J. E. Robinson, 1974 .

DEPENDENCE OF CARRIER LIFETIME AND RESISTIVITY ON ANNEALING IN INP GROWN BY HE-PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

M. Frankel, R. Esman, Jin-U. Kang, 1998 .

Theoretical modeling of dark current in quantum dot infrared photodetectors using nonequilibrium Green’s functions

M. Deen, D. Thompson, M. Naser, 2008 .