J. Yang

发表

Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells

M. Shur, G. Simin, M. Khan, 2001 .

Band-edge luminescence in quaternary AlInGaN light-emitting diodes

M. Shur, G. Simin, M. Khan, 2001 .

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

G. Simin, A. Koudymov, M.A. Khan, 2003, IEEE Electron Device Letters.

Effect of metallisation on surface acoustic wave velocity in GaN-on-sapphire structures

M. Shur, R. Gaska, J. Yang, 2000 .

Low resistance Ti'Pt'Au ohmic contacts to p-type GaN

W. Lanford, I. Adesida, J. Yang, 2000 .

Band-edge exciton states in AlN single crystals and epitaxial layers

C. Chen, M. Khan, Hongxing Jiang, 2004 .

Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

G. Simin, M. Khan, V. Adivarahan, 2004, IEEE Microwave and Wireless Components Letters.

GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN

M. Shur, M. Khan, R. Gaska, 2000 .

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaska, J. Yang, M. Asif Khan, 1997, IEEE Electron Device Letters.

The 1.6-kV AlGaN/GaN HFETs

G. Simin, M.A. Khan, J. Yang, 2006, IEEE Electron Device Letters.

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Michael S. Shur, Michael E. Levinshtein, Grigory Simin, 2000 .

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

Michael S. Shur, A. Lunev, Remigijus Gaska, 2010 .

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Hong Wang, Grigory Simin, C. Q. Chen, 2002 .

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

G. Simin, M. Khan, V. Adivarahan, 2003 .

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, A. Tarakji, Grigory Simin, 2000 .

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

A. Lunev, M.A. Khan, J. Yang, 2000, IEEE Electron Device Letters.

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

G. Simin, M. Khan, I. Adesida, 2003 .

AlGaN layers grown on GaN using strain-relief interlayers

Hong Wang, C. Q. Chen, M. Asif Khan, 2002 .

GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates

C. Chen, Hong Wang, D. Hill, 2002 .

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Michael S. Shur, Grigory Simin, M. Asif Khan, 2002 .

GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1 1 00] oriented GaN substrates

C. Chen, D. Hill, G. Simin, 2002 .

Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells

M. Shur, G. Simin, M. Khan, 2001 .

Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

M. Shur, G. Simin, M. Khan, 2001 .

The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells

Eicke R. Weber, Piotr Perlin, Laila Mattos, 2000 .

High temperature characteristics of Pd Schottky contacts on n-type GaN

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1996 .

High transconductance heterostructure field‐effect transistors based on AlGaN/GaN

M. Shur, Hyun Woo Park, M. Khan, 1996 .

Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

Michael S. Shur, M. Asif Khan, M. Shur, 1996 .

AlGaN-GaN heterostructure FETs with offset gate design

M. Shur, M. Khan, I. Adesida, 1997 .

High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

I. Adesida, J. Yang, A. Ping, 1997 .

Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

Thomas N. Jackson, M. Asif Khan, Suzanne E. Mohney, 1997 .

Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs

M. Khan, I. Adesida, J. Yang, 1997 .

Study of contact formation in AlGaN/GaN heterostructures

M. Khan, J. Yang, S. Lau, 1997 .

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

Michael S. Shur, Andrei Osinsky, Gregory L. Snider, 1998 .

P/He ion implant isolation technology for AlGaN/GaN HFETs

P. M. Asbeck, M. Asif Khan, G. Hanington, 1998 .

Metal contacts to n-type GaN

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1998 .

High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

John A. Higgins, Richard Pierson, Gerard J. Sullivan, 1998 .

Visible-blind GaN Schottky barrier detectors grown on Si(111)

R. Gaska, John F. Muth, Henryk Temkin, 1998 .

High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

G. Simin, V. Adivarahan, J. Yang, 2005, IEEE Electron Device Letters.

Microwave electronics device applications of AlGaN/GaN heterostructures

C. Faber, I. Adesida, J. Yang, 1999 .

GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder

Y. G. Hong, J. Yang, G. Yang, 2009 .

Temperature‐mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates

M. Graef, M. Khan, J. Yang, 1995 .

AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator

C. S. Oh, C. Youn, J. Yang, 2004 .

Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors

M. Shur, G. Simin, M. Khan, 2001 .

High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates

M. Shur, G. Simin, M. Khan, 2000 .

High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC

A. Crespo, M.A. Khan, J. Yang, 2003, IEEE Electron Device Letters.

CCD measurements of guided optical mode attenuation in GaN layers

M. Shur, R. Gaska, J. Yang, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Atmospheric-pressure glow plasma synthesis of plasmonic and photoluminescent zinc oxide nanocrystals

E. Aydil, J. Yang, U. Kortshagen, 2016 .

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors

M. Shur, N. Pala, M. Levinshtein, 2001 .

Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

M. Khan, J. Yang, Jian Ping Zhang, 2005 .

Exciton and carrier motion in quaternary AlInGaN

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2003 .

Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers

M. Shur, R. Gaska, R. Gaska, 2015 .

Photoluminescence efficiency in AlGaN quantum wells

M. Shur, R. Gaska, M. Shatalov, 2014 .

Dynamic behavior of hot-electron–hole plasma in highly excited GaN epilayers

M. Shur, M. Khan, S. Juršėnas, 2000 .

Localization and Hopping of Excitons in Quaternary AlInGaN

M. Shur, G. Simin, M. Khan, 2003 .

High-power operation of III-N MOSHFET RF switches

G. Simin, V. Adivarahan, J. Yang, 2005, IEEE Microwave and Wireless Components Letters.

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

J. Yang, Jeon-Wook Yang, K. Shim, 2008 .

Magnetooptical studies of resonant plasma excitations in grating-gate GaN/AlGaN-based field-effect transistors

M. Shur, W. Knap, R. Gaska, 2011, 2011 International Conference on Infrared, Millimeter, and Terahertz Waves.

Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

Michael S. Shur, Christian Kisielowski, M. Asif Khan, 1997 .

Photoluminescence study of high quality InGaN–GaN single heterojunctions

M. Khan, J. Yang, H. Temkin, 1996 .

Visible–blind photoresponse of GaN-based surface acoustic wave oscillator

M. Shur, M. Khan, R. Gaska, 2002 .

Photoluminescence dynamics in highly nonhomogeneously excited GaN

M. Shur, M. Khan, J. Yang, 2007 .

AlGaN/GaN Microwave Switch With Hybrid Slow and Fast Gate Design

M. Shur, G. Simin, R. Gaska, 2010, IEEE Electron Device Letters.

Insulated-Gate Integrated III-Nitride RF Switches

M. Shur, G. Simin, J. Deng, 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Carrier dynamics in GaN at extremely low excited carrier densities

M. Shur, A. Zukauskas, P. Vitta, 2008 .

Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

M. Khan, J. Yang, F. Ponce, 2007 .

Novel high power AlGaN/GaN HFETs on SiC substrates

M. Shur, R. Gaska, J. Yang, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Maximum current in nitride-based heterostructure field-effect transistors

M. Shur, G. Simin, M. Khan, 2002 .

Efficiency droop and carrier transport in AlGaN epilayers and heterostructures

M. Shur, R. Gaska, M. Shatalov, 2015 .

Allowable Substrate Bias for the Etching of n‐GaN in Photo‐Enhanced Electrochemical Etching

C. S. Oh, J. Yang, G. Yang, 2001 .

Photoenhanced electrochemical etching for p-GaN

J. Yang, G. Yang, H. J. Lee, 2000 .

Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface

J. Yang, K. Shim, S. Hong, 2008 .

Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors

M. Shur, G. Simin, M. Khan, 2002 .

$\hbox{HfO}_{2}$–III-Nitride RF Switch With Capacitively Coupled Contacts

M. Shur, N. Pala, V. Tokranov, 2009, IEEE Electron Device Letters.

Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells

M. Shur, R. Gaska, A. Žukauskas, 2012 .

Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects

M. Shur, Kai Liu, R. Gaska, 2008 .

Low Dynamic On-Resistance Kilovolt-Range AlGaN/GaN HFETs

G. Simin, M. Khan, V. Adivarahan, 2006, 2006 64th Device Research Conference.

Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

M. Khan, M. Shatalov, J. Yang, 2006 .

Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

M. Shur, R. Gaska, M. Shatalov, 2016 .

Internal quantum efficiency in AlGaN with strong carrier localization

M. Shur, R. Gaska, M. Shatalov, 2012 .

Photoexcited carrier dynamics in AlInN/GaN heterostructures

M. Shur, R. Gaska, S. Marcinkevičius, 2012 .

Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors

M. Shur, N. Pala, G. Simin, 2001 .

Dc and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field Effect Transistors on Sic Substrates

M. Khan, I. Adesida, J. Yang, 1997 .

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

M. Shur, G. Simin, M. Khan, 2001 .

Atomic Scale Analysis of InGaN Multi-Quantum Wells

R. Dupuis, M. Khan, Z. Liliental-Weber, 1999 .

Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures

C. Chen, G. Simin, M. Khan, 2001 .

Stimulated Emission at 258 nm in AlN/AlGaN Quantum Wells Grown on Bulk AlN Substrates

C. Chen, M. Shur, R. Gaska, 2003 .

High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire

I. Adesida, A. Kuliev, V. Kumar, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells

M. Shur, R. Gaska, J. Yang, 2008 .

Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states

M. Shur, R. Gaska, J. Yang, 2010 .

Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals

M. Shur, M. Khan, R. Gaska, 2002 .

The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN

C. Chen, M. Shur, R. Gaska, 2002 .

Bias-assisted photoelectrochemical oxidation of n-GaN in H2O

C. S. Oh, J. Yang, J. Seo, 2002 .

RECENT ADVANCES IN 111-V NITRIDE ELECTRON DEVICES

M. Shur, L. Eastman, M. Khan, 1996 .

DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress

M. Shur, G. Simin, M. Khan, 2002 .

Radio frequency response of GaN-based SAW oscillator to UV illumination by the Sun and man-made source

M. Shur, M. Khan, R. Gaska, 2002 .

Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

M. Shur, N. Pala, M. Levinshtein, 2003 .

Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers

M. Shur, R. Gaska, M. Shatalov, 2015 .

Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content

M. Shur, R. Gaska, M. Shatalov, 2015, Journal of Electronic Materials.

Correlation between carrier localization and efficiency droop in AlGaN epilayers

M. Shur, R. Gaska, M. Shatalov, 2013 .

Heating of photogenerated electrons and holes in highly excited GaN epilayers

M. Shur, M. Khan, R. Gaska, 1999 .

GaN-based SAW delay-line oscillator

M. Shur, M. Khan, R. Gaska, 2001 .

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

G. Simin, I. Adesida, V. Kumar, 2002, IEEE Electron Device Letters.

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

Michael S. Shur, Max Shatalov, Saulius Marcinkevicius, 2010 .

J. Yang, Gaudenzio Meneghesso, Enrico Zanoni, 2010, Microelectron. Reliab..

Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs

C. Youn, J. Yang, Min Han, 2003 .

Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

Michael S. Shur, Grigory Simin, M. Asif Khan, 2000 .

Lattice and energy band engineering in AlInGaN/GaN heterostructures

Michael S. Shur, David J. Smith, Grigory Simin, 2000 .

Schottky barrier properties of various metals on n-type GaN

M. Khan, I. Adesida, J. Yang, 1996 .

Internal polarization fields in GaN∕AlGaN multiple quantum wells with different crystallographic orientations

C. Chen, M. Khan, J. Yang, 2005 .

Low-frequency noise in GaN/GaAlN heterojunctions

M. Shur, M. Levinshtein, W. Knap, 1998 .

Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

A. Tarakji, G. Simin, A. Koudymov, 2003, IEEE Electron Device Letters.

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors

M. Shur, N. Pala, M. Levinshtein, 2001 .

Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes

M. Khan, I. Adesida, J. Yang, 1997 .

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

A. Tarakji, G. Simin, J. Yang, 2001, IEEE Electron Device Letters.

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

Michael S. Shur, A. Lunev, Max Shatalov, 2008 .

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

Grigory Simin, M. Asif Khan, Max Shatalov, 2004 .

Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors

Michael S. Shur, Grigory Simin, Remis Gaska, 2001 .

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

M. Shatalov, C. Chen, Hong Wang, 2003 .

Pulsed atomic layer epitaxy of quaternary AlInGaN layers

M. Shur, Hong Wang, G. Simin, 2001 .

-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

M. Shur, G. Simin, R. Gaska, 2003 .

Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN

C. Youn, J. Yang, M. Han, 2003 .

LOW PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITION OF CUBIC GAN OVER (100) GAAS SUBSTRATES

M. Khan, J. Yang, T. George, 1994 .

PIEZOELECTRIC DOPING IN ALINGAN/GAN HETEROSTRUCTURES

M. Shur, G. Simin, M. Khan, 1999 .

High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells

A. Lunev, Grigory Simin, Michael Shur, 2000 .

Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure

M. Shur, G. Simin, M. Khan, 1999 .

Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

A. Lunev, Grigory Simin, Remis Gaska, 2000 .

Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter

M. Khan, R. Tsu, J. Yang, 2004 .

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

M. Shur, M. Goiran, J. Leotin, 1997 .

Growth of epitaxial GaN films by pulsed laser deposition

M. Khan, S. Choopun, R. Vispute, 1997 .

Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer

H. J. Kim, J. Yang, S. Kim, 2020, Journal of the Korean Physical Society.

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

Michael S. Shur, Saulius Marcinkevicius, Remigijus Gaska, 2011 .

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

Michael S. Shur, Max Shatalov, Saulius Marcinkevicius, 2009 .

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Asif Khan, Fernando Ponce, Vinod Adivarahan, 2006 .

Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition

M. Khan, V. Adivarahan, J. Yang, 2000 .

GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

C. S. Oh, J. Yang, S. Jeon, 2002 .

The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN

M. Khan, I. Adesida, J. Yang, 1998 .

PERFORMANCE AND APPLICATIONS OF DEEP UV LED

M. Shur, R. Gaska, M. Shatalov, 2012 .

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

Michael S. Shur, Michael E. Levinshtein, Sergey L. Rumyantsev, 1998 .

Piezoresistive effect in GaN–AlN–GaN structures

M. Shur, R. Gaska, A. Bykhovski, 1997 .

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Grigory Simin, M. Asif Khan, Vinod Adivarahan, 2002 .

Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates

M. Khan, J. Yang, H. Temkin, 1996 .

Visible-blind ultraviolet photodetectors based on GaN p-n junctions

M. Asif Khan, M. Khan, J. Yang, 1995 .

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Grigory Simin, Bruce H. T. Chai, C. Q. Chen, 2002 .

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

C. Chen, D. Hill, G. Simin, 2002 .

AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW

Max Shatalov, Vinod Adivarahan, S. Wu, 2004 .

Cryogenic RF switch using III-nitride MOSHFETs

M. Shur, G. Simin, J. Yang, 2009 .

Maximum Powers of Low-Loss Series-Shunt FET RF Switches

M. Shur, X. Hu, G. Simin, 2009 .

Ultra low-loss high power AlGaN/GaN HFET switches

M. Shur, G. Simin, R. Gaska, 2008, 2008 IEEE Power Electronics Specialists Conference.

Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors

Tangali S. Sudarshan, M. Asif Khan, G. Gradinaru, 1998 .

Current Crowding in High Performance Low-Loss HFET RF Switches

M. Shur, G. Simin, R. Gaska, 2008, IEEE Electron Device Letters.

Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?

M. Shur, J. Deng, R. Gaska, 1999 .

Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

Michael S. Shur, Remigijus Gaska, Alexei Bykhovski, 1997 .

Optical bandgap formation in AlInGaN alloys

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2000 .

AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

Michael S. Shur, A. Lunev, Max Shatalov, 2004 .

Confocal spectroscopy of InGaN LED structures

Michael S. Shur, Gintautas Tamulaitis, Max Shatalov, 2011 .

Screening dynamics of intrinsic electric field in AlGaN quantum wells

Michael S. Shur, Kai Liu, Gintautas Tamulaitis, 2008 .

Near-band-edge photoluminescence of wurtzite-type AlN

M. Shur, G. Simin, M. Khan, 2002 .

Investigation of the effect of indium mole fractions on recombination processes in AlInGaN layers grown by pulsed MOCVD

M. Khan, J. Yang, J. Zhang, 2003 .

SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

Michael S. Shur, A. Lunev, Grigory Simin, 2000 .

Stimulated emission in AlGaN/AlGaN quantum wells with different Al content

Michael S. Shur, Albertas Žukauskas, Max Shatalov, 2012 .

Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN-on-Sapphire

M. Shur, M. Khan, R. Gaska, 2002 .

Dependence of intermediated noble metals on the optical and electrical properties of ITO/metal/ITO multilayers

Daeil Kim, J. Yang, J. Park, 2009 .

Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition

M. Khan, J. Lin, Hongxing Jiang, 1996 .

Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate

H. Wang, J. Yang, H. Tserng, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

High-performance AlGaN/GaN high electron mobility transistors on SiC

G. Simin, M. Khan, I. Adesida, 2002 .

Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors

M. Shur, N. Pala, X. Hu, 2002 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

G. Simin, M. Khan, I. Adesida, 2002 .

LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

M. Shur, N. Pala, M. Levinshtein, 2001, The Random and Fluctuating World.

Drift mobility of electrons in AlGaN/GaN MOSHFET

M. Shur, M. Levinshtein, G. Simin, 2001 .

High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy

Michael S. Shur, Rakesh K. Jain, Max Shatalov, 2014 .

Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition

M. Khan, J. Yang, T. George, 1996 .

Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates

Michael S. Shur, Michael E. Levinshtein, S. L. Rumyantsev, 2000 .

Low Frequency Noise in Gallium Nitride Field Effect Transistors

M. Shur, M. Levinshtein, G. Simin, 2002 .

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers

Grigory Simin, Phil Won Yu, M. Asif Khan, 2003 .

RF Transmission Line Method for Wide-Bandgap Heterostructures

M. Shur, N. Pala, V. Tokranov, 2009, IEEE Electron Device Letters.

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

G. Simin, A. Koudymov, M.A. Khan, 2005, IEEE Electron Device Letters.

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2000 .

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

UV-Assisted Electrochemical Oxidation of GaN

C. S. Oh, C. Youn, J. Yang, 2002 .

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Hong Wang, C. Q. Chen, M. Asif Khan, 2002 .

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

Michael S. Shur, Asif Khan, C. Q. Chen, 2002 .

Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

C. Chen, G. Simin, M. Khan, 2002 .

Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

Grigory Simin, Max Shatalov, Vinod Adivarahan, 2002 .

Recent Progress in Gan Based Field Effect Transistors

M. Shur, M. Khan, J. Yang, 1995 .

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Acousto-optic diffraction of blue and red light in GaN

Michael S. Shur, Daumantas Ciplys, Romualdas Rimeika, 2002 .

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

R. Mickevicius, Grigory Simin, Michael Shur, 2004 .

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

C. Q. Chen, Richard J. Molnar, M. Asif Khan, 2004 .

Recent advances in III-V nitride electron devices

M. Shur, L. Eastman, J. Yang, 1996, International Electron Devices Meeting. Technical Digest.

Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

T. Jackson, M. Khan, J. Yang, 1997 .

Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

Michael S. Shur, Grigory Simin, Sergey L. Rumyantsev, 2003 .

Low frequency noise in GaN-based transistors

M. Shur, N. Pala, M. Levinshtein, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters

M. Shur, G. Simin, M. Khan, 2001 .

GaN-based micro chemical sensor nodes for early warning chemical agents

Anna Liao, Jeong-Sun Moon, Kyung-Ah Son, 2007, SPIE Defense + Commercial Sensing.

Self-heating in high-power AlGaN-GaN HFETs

M. Shur, J. Yang, R. Gaska, 1998, IEEE Electron Device Letters.

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Michael S. Shur, Wojciech Knap, Michael E. Levinshtein, 2002 .