Q. Fareed

发表

Band-edge luminescence in quaternary AlInGaN light-emitting diodes

M. Shur, G. Simin, M. Khan, 2001 .

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Hong Wang, Grigory Simin, C. Q. Chen, 2002 .

Dislocation reduction in high Al‐content AlGaN films for deep ultraviolet light emitting diodes

Asif Khan, Bin Zhang, Balakrishnan Krishnan, 2011 .

Characterization of reactive ion etched surface of GaN using methane gas with chlorine plasma

D. Basak, Q. Fareed, S. Sakai, 2000 .

Terahertz detection by GaN/AlGaN transistors

Michael S. Shur, C. Gaquiere, F. Teppe, 2006 .

Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Vinod Adivarahan, M. Khan, V. Adivarahan, 2012 .

Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN

V. Adivarahan, Q. Fareed, J. Dion, 2011 .

Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers

M. Shur, R. Gaska, Q. Fareed, 2005 .

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

F. Husna, V. Adivarahan, Q. Fareed, 2012, IEEE Transactions on Electron Devices.

Transport properties of SiO2/AlInN/AlN/GaN metal?oxide?semiconductor high electron mobility transistors on SiC substrate

F. Husna, V. Adivarahan, Q. Fareed, 2014 .

UV-LED controlled GaN-based SAW phase shifter

M. Shur, R. Gaska, Q. Fareed, 2006 .

Selective Etching of GaN over AlxGa1-xN Using Reactive Ion Plasma of Cl2/CH4/Ar Gas Mixture

D. Basak, Q. Fareed, S. Sakai, 1999 .

Saturated gain in GaN epilayers studied by variable stripe length technique

M. Shur, R. Gaska, Jian Ping Zhang, 2006 .

Stimulated Emission at 258 nm in AlN/AlGaN Quantum Wells Grown on Bulk AlN Substrates

C. Chen, M. Shur, R. Gaska, 2003 .

High voltage operation of field-plated AlInN HEMTs

V. Adivarahan, Q. Fareed, A. Tarakji, 2011 .

Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

Q. Fareed, Tao Wang, S. Sakai, 2000 .

Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

Q. Fareed, J. Dion, Asif Khan, 2011 .

Surface Acoustic Waves And Guided Optical Waves In AlGaN Films

M. Shur, R. Gaska, Q. Fareed, 2003 .

Dependence of AlGaN-based SAW oscillator frequency on temperature

M. Shur, R. Gaska, Q. Fareed, 2004 .

First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells

Asif Khan, Bin Zhang, Vinod Adivarahan, 2010 .

Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region

V. Adivarahan, Q. Fareed, Asif Khan, 2009 .

Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN

Monirul Islam, Asif Khan, Thomas M. Katona, 2007 .

Pulsed atomic layer epitaxy of quaternary AlInGaN layers

M. Shur, Hong Wang, G. Simin, 2001 .

Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

Asif Khan, Bin Zhang, Vinod Adivarahan, 2013 .

AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

M. Asif Khan, M. Khan, Q. Fareed, 2002 .

MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters

Vinod Adivarahan, M. Khan, D. Blom, 2011 .

Elevated-Temperature Annealing Effects on AlGaN/GaN Heterostructures

I. Adesida, I. Ahmad, Q. Fareed, 2011 .

Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Shiro Sakai, Tao Wang, Katsushi Nishino, 2000 .

Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates

Asif Khan, Thomas M. Katona, Vinod Adivarahan, 2007 .

Reactive Ion Etching of GaN and AlxGa1-xN Using Cl2/CH4/Ar Plasma

D. Basak, Q. Fareed, S. Sakai, 1999 .

Ultraviolet-sensitive AlGaN-based surface acoustic wave devices

M. Shur, N. Pala, R. Gaska, 2004, Proceedings of IEEE Sensors, 2004..

Near-band-edge photoluminescence of wurtzite-type AlN

M. Shur, G. Simin, M. Khan, 2002 .

280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region

Monirul Islam, Asif Khan, Bin Zhang, 2009 .

Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm

Asif Khan, Bin Zhang, Vinod Adivarahan, 2013 .

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Hong Wang, C. Q. Chen, M. Asif Khan, 2002 .

Guided-wave acousto-optic diffraction in AlxGa1−xN epitaxial layers

M. Shur, R. Gaska, Q. Fareed, 2004 .

Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire

V. Adivarahan, Q. Fareed, F. Ponce, 2007 .

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters

M. Shur, G. Simin, M. Khan, 2001 .