S. Yamada

S. Yamada, T. Kita, H. Sato, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Fractional quantum Hall effects in In0.75Ga0.25As bilayer electron systems observed as “Finger print”

S. Yamada, M. Akabori, A. Fujimoto, 2019, Scientific Reports.

Electron mobility and compensation ratios in high‐purity n‐type InP

S. Yamada, A. Taguchi, 1987 .

Spin-orbit interactions in high In-content InGaAs/InAlAs inverted heterojunctions for Rashba spintronic devices

S. Yamada, Hyonkwang Choi, M. Akabori, 2008 .

Spin-polarized transport in Rashba quantum point contacts

S. Yamada, T. Kita, M. Akabori, 2004 .

S. Yamada, 2004 .

Study for realization of spin-polarized field effect transistor in In0.75Ga0.25As/In0.75Al0.25As heterostructure

Tomohiro Kita, Yuuki Sato, S. Yamada, 2002 .

Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions

Tomohiro Kita, Yuuki Sato, S. Yamada, 2001 .

Quantum oscillations of transverse resistance in series and single point-contact configurations

S. Yamada, Masafumi Yamamoto, K. Aihara, 1992 .

Resonant light scattering by coupled electron-LO phonon system in d-doped Al x Ga 1- x As/GaAs single-heterojunctions

S. Yamada, S. Katayama, M. Koyano, 1999 .

Non-equilibrium cyclotron resonances in GaInAs/InP two-dimensional electron gas

T. Fukui, S. Yamada, A. Sugimura, 1986 .

Nonparabolic subband structure of Ga0.47In0.53As‐InP quantum wells

S. Yamada, A. Sugimura, A. Taguchi, 1985 .

Subband effective mass and mobility of two-dimensional electrons in uniformly Si-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells

Y. Kawamura, S. Yamada, H. Asai, 1992 .

Fractional quantum Hall effects in In0.75Ga0.25As bilayer electron systems observed as “Finger print”

S. Yamada, M. Akabori, A. Fujimoto, 2019, Scientific Reports.

Analog‐to‐digital conversion experiments using a LiNbO3 balanced bridge modulator

Juichi Noda, Makoto Minakata, M. Minakata, 1981 .

Reversible variation of donor concentrations in high-purity InP by thermal treatment

S. Yamada, E. Kubota, K. Ando, 2000 .

Narrow two‐dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth

T. Fukui, S. Yamada, H. Asai, 1987 .

Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide

T. Fukui, S. Yamada, N. Kobayashi, 1983 .

Small mesas and holes in split‐gate quantum wires acting as ‘‘artificial impurities’’ fabricated with scanning tunneling microscope

S. Yamada, Masafumi Yamamoto, 1996 .

SMALL MESA STRUCTURE IN SPLIT-GATE WIRES FABRICATED BY SCANNING TUNNELING MICROSCOPE FOR OBSERVING COULOMB BLOCKADE EFFECTS

S. Yamada, Masafumi Yamamoto, 1994 .

Magnetic properties of nano-particles of Au, Pd and Pd/Ni alloys

S. Yamada, H. Hori, T. Teranishi, 2001 .

Magnetic properties of nanoparticles in Pd/Ni alloys

S. Yamada, H. Hori, T. Teranishi, 1998 .

Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors

S. Yamada, M. Akabori, T. Murakami, 2012 .

Large spontaneous spin-splitting and enhanced effective g-factor in two-dimensional electron gases at In0.75Ga0.25As/In0.75Al0.25As metamorphic heterojunctions

S. Yamada, T. Kita, Yuki Sato, 2001 .

Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure

T. Schäpers, S. Yamada, V. Guzenko, 2006 .

Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In 0.89 Ga 0.11 Sb / In 0.88 Al 0.12 Sb by magnetoresistance measurements

T. Schäpers, S. Yamada, V. Guzenko, 2008 .

Establishment of basic process to fabricate full GaAs cantilever for scanning probe microscope applications

S. Yamada, T. Wakayama, N. Iwata, 2004 .

Identification of acceptors and donors in high-purity InP grown by metalorganic chemical vapor deposition

S. Yamada, K. Takahei, K. Uwai, 1987 .

Possible large zero-field spin-splittings in InxGa1−xAs/InyA11−yAs (x,y=0.75) heterojunctions

S. Yamada, S. Gozu, T. Kikutani, 2000 .

Spontaneous spin-splitting observed in resonant tunneling diode with narrow band-gap asymmetric quantum well

S. Yamada, T. Kita, S. Gozu, 2002 .

Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

S. Yamada, Y. Horikoshi, Y. Hirayama, 1990 .

Low Temperature High Electron Mobility in In0.75Ga0.25As/In0.75Al0.25As Modulation-Doped Hetrostructures Grown on GaAs Substrate

S. Yamada, S. Gozu, Chulun Hong, 1998 .

Spin splitting in InGaSb/InAlSb 2DEG having high indium content

S. Yamada, M. Akabori, Toshi-kazu Suzuki, 2006 .

Spin-Splitting Transport in Narrow-Gap Heterojunction Narrow Wires

S. Yamada, M. Akabori, T. Kakegawa, 2005 .

Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

S. Yamada, M. Tomizawa, T. Kita, 2001 .

Large and anisotropic zero-field spin-splittings in InxGa1−xAs/InyAl1−yAs (x,y>0.6) heterojunctions

S. Yamada, S. Gozu, T. Kikutani, 2000 .

Gate-Controlled Very Large Spontaneous Spin-Splittings in Normal In0.75Ga0.25As / In0.75Al0.25As Heterojunctions Grown on GaAs Substrates

S. Yamada, S. Gozu, T. Kikutani, 2001 .