Guilei Wang

发表

One-Time Use MEMS Metal Bridge Igniter Based Electro-Explosive Solid Off-On Switch

Kang Li, Peng Liu, Wen Zhong Lou, 2014 .

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Tianchun Ye, Jun Xu, Chao Zhao, 2017, Nanoscale Research Letters.

Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology

Tianchun Ye, Ping Yang, Jun Luo, 2016 .

Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

Chao Zhao, Huilong Zhu, Jun Luo, 2015 .

Strain Modulation of Selectively and/or Globally Grown Ge Layers

Guilei Wang, Jinbiao Liu, H. Radamson, 2021, Nanomaterials.

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

M. Toprak, Guilei Wang, H. Radamson, 2021, Nanomaterials.

Influence of Rapid Thermal Annealing on Ge-Si Interdiffusion in Epitaxial Multilayer Ge0.3Si0.7/Si Superlattices with Various GeSi Thicknesses

Guilei Wang, H. Yin, Jiang Yan, 2018 .

Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1)

Tianchun Ye, Jun Luo, Jing Xu, 2019, Journal of Materials Science: Materials in Electronics.

Co-sputtering Co–Ti alloy as a single barrier/liner for Co interconnects and thermal stability enhancement using TiN metal capping

Tianchun Ye, Jun Luo, Guilei Wang, 2019, Journal of Materials Science: Materials in Electronics.

A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown

A. Du, Guilei Wang, Jun Luo, 2019, Journal of Materials Science: Materials in Electronics.

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

Yuanyuan Wu, Guilei Wang, H. Radamson, 2022, Nanomaterials.

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Guilei Wang, Junfeng Li, Huilong Zhu, 2021, Nano letters.

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si1−xGex

Guilei Wang, Huilong Zhu, H. Radamson, 2020 .

Strained Silicon Technology

Guilei Wang, 2019, Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond.

Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

Tianchun Ye, Junjie Li, Chao Zhao, 2018, IEEE Electron Device Letters.

Study of selective isotropic etching Si1−xGex in process of nanowire transistors

Guilei Wang, Junfeng Li, H. Yin, 2019, Journal of Materials Science: Materials in Electronics.

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

Guilei Wang, H. Radamson, Yong Du, 2021, Nanomaterials.

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Jianfeng Gao, A. Du, Guilei Wang, 2020, Nanomaterials.

Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

E. Simoen, Z. Ji, Guilei Wang, 2021, IEEE Journal of the Electron Devices Society.

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Tianchun Ye, Guilei Wang, Jun Luo, 2021, Nanomaterials.

Hot Implantations of P into Ge: Impact on the Diffusion Profile

Tianchun Ye, Jun Luo, E. Simoen, 2017 .

Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors

Tianchun Ye, Guilei Wang, Wenjuan Xiong, 2020, Journal of Materials Science: Materials in Electronics.

Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness

Tianchun Ye, Yaodong Liu, Guilei Wang, 2020 .

Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate

Tianchun Ye, Guilei Wang, Junfeng Li, 2018, Japanese Journal of Applied Physics.

Exploration of the impact of interface states density on the specific contact resistivity in TiSix/n+-Si Ohmic contacts through high-low frequency method

Tianchun Ye, Jing Xu, Guilei Wang, 2019, Japanese Journal of Applied Physics.

Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization

Tianchun Ye, Yaodong Liu, Jianfeng Gao, 2020, IEEE Transactions on Electron Devices.

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Guilei Wang, H. Radamson, Yong Du, 2022, Materials.

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Jianfeng Gao, A. Du, Guilei Wang, 2020, Materials.

Integration Issue of Tensile SiN Liner for Dual Stress Liner(DSL) in Gate-Last High-k/Metal Gate(HKMG) Process Flow

Qiang Xu, Tao Yang, Peizhen Hong, 2013 .

SiGe S/D Integration and Device Verification

Guilei Wang, 2019, Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond.

STRUCTURAL, MICRO STRUCTURAL AND ELECTRICAL PROPERTIES COMPARISON OF PZT FILMS DEPOSITED ON DIFFERENT BOTTOM ELECTRODES

D. Remiens, É. Cattan, Guilei Wang, 2006 .

Selective Digital Etching of Silicon-Germanium using Nitric and Hydrofluoric Acids.

A. Du, Guilei Wang, Huilong Zhu, 2020, ACS applied materials & interfaces.

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Jun Yu Li, R. Liang, Jun Xu, 2022, Nanomaterials.

Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD

Guilei Wang, H. Radamson, Wenwu Wang, 2021, Journal of Materials Science: Materials in Electronics.

Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects

Tianchun Ye, Jun Luo, Yaodong Liu, 2020, Japanese Journal of Applied Physics.

Novel gap filling technique of shallow trench isolation structure in 16/14 nm FinFET using sub-atmospheric chemical vapor deposition

Tianchun Ye, Guilei Wang, Qiang Xu, 2020, Journal of Materials Science: Materials in Electronics.

Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Tianchun Ye, E. Simoen, Guilei Wang, 2016, IEEE Transactions on Electron Devices.

Impact of Ge pre-amorphization implantation on forming ultrathin TiGex on both n- and p-Ge substrate

Tianchun Ye, Jing Xu, Guilei Wang, 2018, Japanese Journal of Applied Physics.

Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Guilei Wang, Wenwu Wang, Xiaolei Wang, 2021, Nanomaterials.

Study of n-type doping in germanium by temperature based PF+ implantation

Guilei Wang, Jinbiao Liu, Junfeng Li, 2019, Journal of Materials Science: Materials in Electronics.

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Luyue Xie, A. Du, Guilei Wang, 2020, Nanomaterials.

A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids

Technology of China, A. Du, Guilei Wang, 2020, 2003.03529.

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Tianchun Ye, Guilei Wang, H. Radamson, 2022, Nanomaterials.

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates*

Guilei Wang, H. Yin, Qingzhu Zhang, 2017 .

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Tianchun Ye, Guilei Wang, H. Radamson, 2022, Micromachines.

Selective Epitaxy of Group IV Materials for CMOS Application

M. Kolahdouz, Guilei Wang, H. Radamson, 2018, Complementary Metal Oxide Semiconductor.

Investigation of NiGe Films Formed on Both n+- and p+-Ge with P and B Ion Implantation before Germanidation

Tianchun Ye, Guilei Wang, Jun Luo, 2019, ECS Journal of Solid State Science and Technology.

A DFT Study on Formation of Bisaryl Oxime Ether from Benzaldehyde and Phenoxyamine

Guilei Wang, Ming Lei, Aiguo Zhong, 2008 .

Experimental Investigation of As Preamorphization Implant on Electrical Property of Ti-Based Silicide Contacts

Tianchun Ye, Yaodong Liu, Jianfeng Gao, 2021, IEEE Transactions on Electron Devices.

Specific Contact Resistivity Improvement by As Preamorphization Implantation for Ti-Based Ohmic Contacts on n+-Si

Tianchun Ye, Yaodong Liu, Guilei Wang, 2020, IEEE Transactions on Electron Devices.

Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies

Tianchun Ye, Jun Luo, Jing Xu, 2018, Microelectronic Engineering.

Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts

Tianchun Ye, Guilei Wang, Jun Luo, 2018, IEEE Transactions on Electron Devices.

On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSix for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes

Tianchun Ye, Jun Luo, E. Simoen, 2017 .

Optimization of a two-step Ni(5% Pt) germanosilicidation process and the redistribution of Pt in Ni(Pt)Si1−xGex germanosilicide

Jun Luo, Hong Liu, Guilei Wang, 2015 .

Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films

Jun Luo, Hong Liu, Guilei Wang, 2015 .

Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate

Jun Luo, Hong Liu, Guilei Wang, 2015 .

A Voltage-Modulated Nanostrip Spin-Wave Filter and Spin Logic Device Thereof

H. Meng, Guilei Wang, Chao Zhao, 2022, Nanomaterials.

Junction Control by Carbon and Phosphorus Co-Implantation in Pre-Amorphized Germanium

Tianchun Ye, Eddy Simoen, Chao Zhao, 2016 .

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Guilei Wang, 2019, Springer Theses.

Effect of post-weld heat treatment on mechanical characteristics of AZ31 magnesium alloy welded joints

Fei Liu, Guilei Wang, Zhifeng Yan, 2017, Journal of Wuhan University of Technology-Mater. Sci. Ed..

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Linpeng Dong, Guilei Wang, Jinbiao Liu, 2021, Nanomaterials.

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

Guilei Wang, Jinbiao Liu, Junfeng Li, 2022, 2204.11470.

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Guilei Wang, H. Radamson, Wenwu Wang, 2022, Nanomaterials.

Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs

Jun Luo, Guilei Wang, Wenwu Wang, 2021 .

Miniaturization of CMOS

Xiaobin He, Yong Du, Junjie Li, 2019, Micromachines.

Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art

Guilei Wang, H. Radamson, M. Procek, 2021, Frontiers in Materials.

Silicon photonics process development based on a 200-mm CMOS platform

Zhihua Li, Jiang Yan, Daoqun Liu, 2016, SPIE/COS Photonics Asia.

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Guilei Wang, Huilong Zhu, H. Radamson, 2020, Nanoscale Research Letters.

State of the Art and Future Perspectives in Advanced CMOS Technology

Xiaobin He, Huilong Zhu, Yong Du, 2020, Nanomaterials.

The Challenges of Advanced CMOS Process from 2D to 3D

Xiaobin He, Yanbo Zhang, Jinbiao Liu, 2017 .

A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique

Tianchun Ye, Jun Luo, Guilei Wang, 2017 .

Impacts of Ge Preamorphization Implantation and Si Capping on the Specific Contact Resistivity of Ni(Pt)SiGe/p+-SiGe Contacts

Tianchun Ye, Guilei Wang, Jun Luo, 2019, IEEE Transactions on Electron Devices.

Key Process Technologies for Stacked Double Si0.7Ge0.3 Channel Nanowires Fabrication

Guilei Wang, H. Yin, Wenwu Wang, 2020 .

Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device

A. Du, Guilei Wang, Jun Luo, 2019, Journal of Materials Science: Materials in Electronics.

SiNx films and membranes for photonic and MEMS applications

Yaodong Liu, Guilei Wang, Junfeng Li, 2019, Journal of Materials Science: Materials in Electronics.

Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

Chao Zhao, Jiang Yan, Changliang Qin, 2013 .

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.

Jie Yang, Tianchun Ye, Guilei Wang, 2023, ACS applied materials & interfaces.

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Tianchun Ye, Chao Zhao, Huilong Zhu, 2017, Nanoscale Research Letters.

Pattern Dependency of SiGe Layers Selective Epitaxy Growth

Guilei Wang, 2019, Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond.

Investigation on thermal stability of Si0.7Ge0.3/Si stacked multilayer for gate-all-around MOSFETS

Guilei Wang, Wenwu Wang, Z. Kong, 2020, Semiconductor Science and Technology.

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

Jianfeng Gao, Guilei Wang, Xiaobin He, 2022, Nanomaterials.

Process optimization of the Si0.7Ge0.3 Fin Formation for the STI first scheme

A. Du, Guilei Wang, Junfeng Li, 2019, Semiconductor Science and Technology.

Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology

Tianchun Ye, Chao Zhao, Jing Xu, 2013 .

Application of ALD W films as gate filling metal in 22nm HKMG-last integration

Qiang Xu, Tianchun Ye, Chao Zhao, 2015 .

Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process

R. Chen, Jianfeng Gao, Guilei Wang, 2023, Nanomaterials.

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Guilei Wang, Huilong Zhu, H. Radamson, 2021, Nanomaterials.

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

Tianchun Ye, Junjie Li, Chao Zhao, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Design impact on the performance of Ge PIN photodetectors

Guilei Wang, Jun Luo, Chao Zhao, 2019, Journal of Materials Science: Materials in Electronics.

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

A. Du, Guilei Wang, Jinbiao Liu, 2023, Nanomaterials.

Improving Driving Current with High-Efficiency Landing Pads Technique for Reduced Parasitic Resistance in Gate-All-Around Si Nanosheet Device

Guilei Wang, Lei Cao, Jinbiao Liu, 2022, ECS Journal of Solid State Science and Technology.

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Guilei Wang, Xiaobin He, Jun Luo, 2021, Nanomaterials.

High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer

Guilei Wang, Jun Luo, Junfeng Li, 2019, Materials Science in Semiconductor Processing.

SiN-based platform toward monolithic integration in photonics and electronics

Guilei Wang, Junfeng Li, Chao Zhao, 2021, Journal of Materials Science: Materials in Electronics.

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

A. Du, Guilei Wang, Jinbiao Liu, 2023, Nanomaterials.

Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process

Guilei Wang, H. Yin, Jiang Yan, 2021 .

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

A. Du, Guilei Wang, Huilong Zhu, 2021, Nanomaterials.

Highly Energy-Efficient Spin Current Generation in SrIrO3 by Manipulating the Octahedral Rotation.

Guilei Wang, Liang Liu, X. Shu, 2023, ACS applied materials & interfaces.

Effective electrical manipulation of a topological antiferromagnet by orbital torques

B. Tay, Guilei Wang, Tieyang Zhao, 2024, Nature communications.

Effective electrical manipulation of topological antiferromagnet by orbital Hall effect

B. Tay, Guilei Wang, Tieyang Zhao, 2023, 2310.09521.

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Guilei Wang, H. Yin, Qingzhu Zhang, 2018 .

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec

Ming Liu, Ling Li, Nianduan Lu, 2022, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process

Guilei Wang, Xiaohui Zhu, Lei Cao, 2024, Nanomaterials.

Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors

E. Simoen, C. Claeys, Guilei Wang, 2017, 2017 China Semiconductor Technology International Conference (CSTIC).

Gate-defined quantum point contacts in a germanium quantum well.

Guilei Wang, Z. Kong, Haitian Su, 2024, Nanoscale.