N. Barin

Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations

C. Fiegna, D. Esseni, P. Palestri, 2005 .

Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs

C. Fiegna, E. Sangiorgi, N. Barin, 2007, IEEE Transactions on Nanotechnology.

Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme

C. Fiegna, D. Esseni, P. Palestri, 2006, IEEE Transactions on Electron Devices.

Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations

C. Fiegna, D. Esseni, P. Palestri, 2006, IEEE Transactions on Electron Devices.

Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs

C. Fiegna, P. Palestri, N. Barin, 2007 .

Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks

C. Busseret, E. Langer, C. Fiegna, 2007, IEEE Transactions on Electron Devices.

Analysis of Silicon Dioxide Interface Transition Region in MOS Structures

A. Asenov, C. Fiegna, E. Sangiorgi, 2007 .

Introducing New Model to Evaluate Market Orientation and It's Effect of Performance in Small to Medium Size enterprises

N. Barin, Ali Maleki, 2014 .