H. Lafontaine

发表

W. Mckinnon, S. McAlister, S. Kovacic, 2004 .

Ion beam intermixing of semiconductor heterostructures for optoelectronic applications

I. V. Mitchell, D. Labrie, H. Lafontaine, 1997 .

Magnetotransport properties of p-type strained SiGe quantum wells

P. Coleridge, H. Lafontaine, Robin L. Williams, 1996, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings.

Growth of undulating Si0.5Ge0.5 layers for photodetectors at λ=1.55 μm

H. Lafontaine, S. Janz, N. Rowell, 1999 .

Phonon-resolved photoluminescence at λ=1.55 μm from undulating Si0.5Ge0.5 epitaxial layers

H. Lafontaine, S. Janz, N. Rowell, 1998 .

Si/Si1−xGex photodetectors using three-dimensional growth modes to enhance photoresponse at λ=1550 nm

Siegfried Janz, Dan-Xia Xu, M. Pearson, 2000 .

Phase transitions at zero magnetic field in Si/SiGe quantum wells

H. Lafontaine, M. D'iorio, J. Lam, 1998 .

Photoluminescence of boron-doped Si1−xGex epilayers grown by UHV-CVD

H. Lafontaine, N. Rowell, M. Dion, 2002 .

Photoluminescence in UHV-CVD-grown Si1−xGex quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress

H. Lafontaine, Robin L. Williams, N. Rowell, 1998 .

Band Alignment of Si 1-x Ge x And Si 1-x-y .Ge x C y Quantum Wells On Si (001)

O. Schmidt, H. Lafontaine, Robin L. Williams, 1998 .

Formation of thin gate oxides on SiGe with atomic oxygen

H. Lafontaine, E. A. Ogryzlo, B. Heinrich, 1998 .

Laser-induced selective area band-gap tuning in Si/Si1−xGex microstructures

J. Dubowski, H. Lafontaine, D. Houghton, 1999 .

Low Noise Considerations in SiGe BiCMOS Technology for RF Applications

M. Borgarino, R. Plana, S. Kovacic, 1999, 1999 29th European Microwave Conference.

X‐ray mask development based on SiC membrane and W absorber

H. Pépin, Yong Chen, A. Haghiri-Gosnet, 1992 .

Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing

H. Lafontaine, D. Houghton, N. Rowell, 1995 .

Index of Refraction and Strain Induced Birefringence of Pseudomorphic Si 1−x Ge x

D. M. Bruce, P. Jessop, A. Delage, 1997 .

Electronic contribution to secondary electron compositional contrast in the scanning electron microscope

H. Lafontaine, D. Perovic, M. R. Castell, 1997 .

KINETIC CRITICAL THICKNESS FOR SURFACE WAVE INSTABILITY VS. MISFIT DISLOCATION FORMATION IN GEXSI1-X/SI (100) HETEROSTRUCTURES

H. Lafontaine, D. McComb, D. Houghton, 1997 .

The hall insulator in 2-dimensional sige hole gases

P. Coleridge, H. Lafontaine, Robin L. Williams, 1997 .

On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors

Mattia Borgarino, Robert Plana, T. Parra, 2000 .

Stress optimization in Sic films for X-ray-mask membrane application

H. Pépin, J. Currie, J. Kieffer, 1991 .

Reactive sputtering of InP in N2 and N2/O2 plasmas

J. Currie, H. Lafontaine, S. Poulin, 1991 .

Intra-Granular Microstructure And Stress In Sputtered Tungsten Thin Films

A. Haghiri-Gosnet, H. Lafontaine, M. Ravet, 1993 .

Optical properties of pseudomorphic Si/sub 1-x/Ge/sub x/ for Si-based waveguides at the /spl lambda/=1300-nm and 1550-nm telecommunications wavelength bands

Andre Delage, Siegfried Janz, Dan-Xia Xu, 1998 .

X-ray scattering investigation of the interfaces in Si/Si1-xGex superlattices on Si(001) grown by MBE and UHV-CVD

H. Lafontaine, J. Baribeau, 1998 .