D. Domes

SiC JFET in Contrast to High Speed Si IGBT in Matrix Converter Topology

D. Domes, W. Hofmann, 2007, 2007 IEEE Power Electronics Specialists Conference.

A first loss evaluation using a vertical SiC-JFET and a conventional Si-IGBT in the bidirectional matrix converter switch topology

J. Lutz, D. Domes, W. Hofmann, 2005, 2005 European Conference on Power Electronics and Applications.

Efficiency improvement with silicon carbide based power modules

R. Rupp, D. Domes, Zhang Xi, 2009 .

Switching performance of a 1200 V SiC-Trench-MOSFET in a low-power module

Daniel Domes, Daniel Heer, D. Peters, 2016 .