Marc Sanquer

发表

Marc Sanquer, 2005 .

19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot

Maud Vinet, Marc Sanquer, Gaël Pillonnet, 2020, 2020 IEEE International Solid- State Circuits Conference - (ISSCC).

SOI CMOS technology for quantum information processing

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, 2017 IEEE International Conference on IC Design and Technology (ICICDT).

Noise and Information in Nanoelectronics, Sensors, and Standards (Proceedings Volume)

Marc Sanquer, Giuseppe Iannaccone, Christoph M. Hoffmann, 2003 .

Single Ion Implantation into Si-Based Devices

Charles Yang, Romain Wacquez, M. Vinet, 2010 .

The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire

Romain Wacquez, Maud Vinet, Marc Sanquer, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability?

Romain Wacquez, D. Kern, Marc Sanquer, 2011, FET.

Progress on single-electron transistors

Marc Sanquer, Xavier Jehl, 2010, 2010 IEEE International Conference on Integrated Circuit Design and Technology.

Scattering gate interferometry at a quantum point contact” 20th International Conference on Electronic Properties of Two-Dimensional Systems

Marc Sanquer, Dominique Mailly, Serge Huant, 2013 .

Si MOS technology for spin-based quantum computing

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

Towards scalable silicon quantum computing

Marc Sanquer, Louis Hutin, Xavier Jehl, 2018, 2018 76th Device Research Conference (DRC).

Current noise in diffusive S/N and S/N/S junctions

Marc Sanquer, David Quirion, Francois Lefloch, 2003, SPIE International Symposium on Fluctuations and Noise.

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities

Romain Wacquez, Maud Vinet, Marc Sanquer, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

SET Accurate Compact Model for SET-MOSFET Hybrid Circuit Simulation

G. Le Carval, Marc Sanquer, C. Le Royer, 2004 .

Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.

Jing Li, Marc Sanquer, Sylvain Barraud, 2015, Nano letters (Print).

Switching quantum transport in a three donors silicon fin-field effect transistor

Romain Wacquez, Maud Vinet, Marc Sanquer, 2011 .

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, Physical review letters.

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, 1708.02903.

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

Romain Wacquez, Maud Vinet, Marc Sanquer, 2011 .

Gate-based high fidelity spin readout in a CMOS device

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2018, Nature Nanotechnology.

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2016, Nano letters.

Coulomb blockade in low-mobility nanometer size Si MOSFET’s

G. Guegan, Marc Sanquer, S. Deleonibus, 2000 .

Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2014, Nano letters.

Compact silicon double and triple dots realized with only two gates

Romain Wacquez, Maud Vinet, Marc Sanquer, 2009, 1005.5686.

Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices

G. Guegan, Marc Sanquer, S. Deleonibus, 2004 .

Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors

Frederic Boeuf, Marc Sanquer, T. Skotnicki, 2003 .

Few electron limit of n-type metal oxide semiconductor single electron transistors

Romain Wacquez, Maud Vinet, Marc Sanquer, 2012, Nanotechnology.

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2018, IEEE Transactions on Electron Devices.