I. Umebu

发表

An ultrahigh vacuum scanning tunneling microscope with a new inchworm mechanism

N. Shimizu, T. Kimura, T. Nakamura, 1990 .

Nature of dark defects revealed in InGaAsP/InP double heterostructure light emitting diodes aged at room temperature

S. Yamakoshi, I. Umebu, O. Ueda, 1982 .

Study of defects in a rapidly degraded InGaAsP/InGaP double‐heterostructure laser grown by liquid phase epitaxy

I. Umebu, O. Ueda, K. Wakao, 1984 .

Analysis of frequency characteristics of AlGaAs double heterostructure LEDS with a small energy-gap difference at the p-n junction

I. Umebu, 1993 .

TEM investigation of modulated structures and ordered structures in InAlAs crystals grown on (001) InP substrates by molecular beam epitaxy

T. Fujii, I. Umebu, O. Ueda, 1989 .

A proposal of a method for analysing the leakage characteristics of 1.3 mu m semiconductor buried heterostructure lasers

I. Umebu, 1993 .

Ionization coefficients measured in abrupt InP junctions

A. Choudhury, I. Umebu, P. Robson, 1980 .

Characterization of interfacial atomic steps in GaAs/AlAs superlattices by transmission electron microscopy

S. Muto, I. Umebu, M. Ikeda, 1988 .

Comparative Study of Interface Structure in GaAs/AlAs Superlattices By Tem and Raman Scattering

S. Muto, I. Umebu, S. Komiya, 1987 .

Generation mechanism of misfit dislocations in In1−xGaxAs1−yPy/InP DH structure grown by LPE

I. Umebu, S. Yamazaki, Y. Kishi, 1983 .

Optically induced glide motion of misfit dislocations in InP/In1−xGaxAs1−yPy/InP double heterostructure

I. Umebu, A. Yamaguchi, S. Komiya, 1983 .

MULTIPLE CHARACTERIZATION OF STRUCTURAL PERFECTION IN GaAs/AlAs SUPERLATTICE

I. Umebu, Tomoji Nakamura, S. Komiya, 1987 .

Direct observation of electron leakage in InGaAsP/InP double heterostructure

O. Wada, S. Yamakoshi, I. Umebu, 1982 .

Scanning tunneling microscopy of chemical vapor deposition grown BiSrCaCuO films

I. Umebu, Tomoji Nakamura, Takafumi Kimura, 1990 .

Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition

M. Takikawa, I. Umebu, O. Ueda, 1987 .

Electrical properties of undoped and Si‐doped Al0.48In0.52As grown by liquid phase epitaxy

Kazuo Nakajima, Toshiyuki Tanahashi, I. Umebu, 1983 .

LPE growth of Cd-doped InP

I. Umebu, P. Robson, 1981 .

A TEM evaluation of CdTe epilayers grown on precisely oriented (111)B GaAs by hot wall epitaxy

I. Umebu, O. Ueda, H. Ebe, 1993 .

TEM CHARACTERIZATION OF CdTe LAYERS GROWN ON GaAs (111)B BY HOT WALL EPITAXY

I. Umebu, O. Ueda, H. Ebe, 1990 .

Transmission electron microscopic observation of InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition

M. Takikawa, I. Umebu, O. Ueda, 1988 .

Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy

I. Umebu, O. Ueda, S. Isozumi, 1983 .

Transmission electron microscopic observation of defects in heavily doped LPE InGaAsP layers with Zn, Cd, Sn and Te

I. Umebu, O. Ueda, T. Kotani, 1983 .

Characterization of radiative efficiency in double heterostructures of InGaAsP/InP by photoluminescence intensity analysis

I. Umebu, A. Yamaguchi, S. Komiya, 1986 .

Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures

O. Wada, I. Umebu, A. Yamaguchi, 1982 .

Thermal strain‐induced degradation mechanism in the visible AlGaAs/GaAs laser

M. Ikeda, I. Umebu, O. Ueda, 1985 .

Dependence of Rocking Curve for Thin In1-xGaxAs1-yPy Layer on Thickness in a Symmetric Bragg Case

I. Umebu, K. Nakajima, S. Komiya, 1982 .

A New Growth Method Using Source Current Control to Supply Solute Elements-Demonstration of In1-xGaxAs Case

I. Umebu, K. Nakajima, S. Yamazaki, 1984 .

V-grooved substrate buried heterostructure InGaAsP/InP laser by one-step epitaxy

H. Ishikawa, I. Umebu, H. Imai, 1982 .