J. B. Webb

发表

Preparation of conducting and transparent thin films of tin‐doped indium oxide by magnetron sputtering

M. Buchanan, J. B. Webb, Digby F. Williams, 1980 .

Hot electron energy relaxation in AlGaN/GaN heterostructures

M. Williams, J. B. Webb, C. E. Martinez, 2004 .

Transmission electron microscopy characterization of InAlSb/InSb bilayers and superlattices

J. B. Webb, Michael Robertson, J. M. Corbett, 1997 .

Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN

Haipeng Tang, J. B. Webb, J. Bardwell, 2002 .

Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

J. B. Webb, Haipeng Tang, J. Bardwell, 1999 .

Properties of carbon-doped GaN

J. B. Webb, Haipeng Tang, J. Bardwell, 2001 .

The structural and compositional characterization of InSb films prepared by metalorganic magnetron sputtering

J. B. Webb, C. Halpin, J. Noad, 1986 .

Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution

S. Moisa, J. Fraser, J. B. Webb, 2001 .

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

J. B. Webb, Haipeng Tang, H. Maher, 2000 .

Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs

J. B. Webb, H. Maher, C. Bolognesi, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

6 – FORMATION OF THIN SEMICONDUCTING FILMS BY MAGNETRON SPUTTERING

James B. Webb, J. B. Webb, J. Webb, 1985 .

Nitride-based HFETs with carrier confinement layers

S. Chang, Y. Su, C. Ko, 2004 .

Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

S. Chang, Y. Su, C. Ko, 2004 .

Nitride-based 2DEG photodetectors with a large AC responsivity

S. Chang, Y. Su, C. Ko, 2003 .

On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors

S. Chang, Y. Su, C. Ko, 2002 .

Surface and interface analysis of GaSbGaAs semiconductor materials

A. Wee, J. B. Webb, K. Tan, 1996 .

High-temperature transport in lanthanum strontium vanadate

M. Sayer, J. B. Webb, J. Webb, 1976 .

Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy

J. B. Webb, Haipeng Tang, J. Bardwell, 2000 .

Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy

J. B. Webb, Haipeng Tang, J. Bardwell, 2000 .

Growth of High Mobility AlGaN/GaN Heterostructures by Ammonia‐Molecular Beam Epitaxy

P. Coleridge, J. B. Webb, Haipeng Tang, 1999 .

AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

S. Haffouz, Haipeng Tang, James B. Webb, 2005 .

AlGaN/GaN HFET devices on SiC grown by ammonia-MBE with high f/sub T/ and f/sub MAX/

J. B. Webb, Haipeng Tang, J. Bardwell, 2003 .

Long-range potential centres in disordered solids

M. Sayer, J. B. Webb, A. Mansingh, 1978 .

Influence of crystalline defects on transport properties of GaN grown by ammonia-molecular beam epitaxy and magnetron sputter epitaxy

J. B. Webb, Haipeng Tang, J. Bardwell, 2000 .

Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy

S. Moisa, J. Fraser, J. B. Webb, 2001 .

P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

S. Chang, Y. Su, C. Ko, 2002 .

Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

P. Coleridge, J. B. Webb, Haipeng Tang, 2001 .

Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy

Y. Liu, J. B. Webb, Haipeng Tang, 2001 .

Hot electron induced negative photoconductivity in n-InSb/GaAs with above gap illumination at low temperature

J. B. Webb, J. Brebner, Y. Beaulieu, 1990 .