Y. H. Lee

发表

Temperature‐dependent critical layer thickness for strained‐layer heterostructures

K. Kim, Y. H. Lee, 1995 .

Chemical sputtering of Al2O3 by fluorine‐containing plasmas excited by electron cyclotron resonance

Y. H. Lee, J. Harper, D. Danner, 1990 .

Room-temperature deposition of a-SiC:H thin films by ion-assisted plasma-enhanced CVD

Y. H. Lee, D. S. Kim, 1996 .

Formation Mechanism and Pore Size Control of Light-Emitting Porous Silicon

M. H. An, Y. H. Lee, E. Suh, 1994 .

Plasma enhanced chemical vapor deposition of TiO2 in microwave‐radio frequency hybrid plasma reactor

Kevin K. H. Chan, Y. H. Lee, M. J. Brady, 1995 .

Sidewall damage in n+-GaAs quantum wires from reactive ion etching

R. Cheung, D. Kern, Y. H. Lee, 1989 .

Strain relaxation in silicon‐germanium microstructures observed by resonant tunneling spectroscopy

A. Zaslavsky, T. Sedgwick, Y. H. Lee, 1995 .

Passivation effect on low-k SiOC dielectrics by H2 plasma treatment

Y. H. Lee, H. Kim, J. Y. Kim, 2002 .

Anomalous microwave properties of high-Tc superconducting microstrip antennas around the critical temperature

Hyo-Sang Choi, Y. H. Lee, Dong-Chul Chung, 1999 .

Deposition and Characterization of PECVD SiOC Films by Using Bistrimethylsilylmethane (BTMSM) Precursor

M. S. Hwang, Y. H. Lee, H. Kim, 2001 .

Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films

M. S. Hwang, Y. H. Lee, J. Y. Kim, 2001 .

Low dielectric fluorinated amorphous carbon thin films grown from C6F6 and Ar plasma

Y. H. Lee, B. Farouk, J. W. Yi, 2000 .

Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition

M. S. Hwang, Y. H. Lee, J. Y. Kim, 2001 .

Effects of gas composition and r.f. power on properties of a–C:H/SiC:H composite films grown by plasma-enhanced chemical vapor deposition

Y. H. Lee, B. Farouk, J. W. Yi, 1998 .

Influence of ion energy flux on structure and optical properties of a‐C:H thin films

Y. H. Lee, B. Farouk, J. H. Lee, 1996 .

Study of silicon contamination and near‐surface damage caused by CF4/H2 reactive ion etching

Y. H. Lee, R. Tromp, G. Oehrlein, 1984 .

Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition

D. Grützmacher, A. Zaslavsky, W. Ziegler, 1992 .

The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack

Y. H. Lee, D. Ko, I. Yeo, 2001 .

Growth law of silicon oxides by dry oxidation

M. H. An, C. Youn, Y. H. Lee, 1996 .

Room Temperature Deposition of Silicon Dioxide Films by Ion‐Assisted Plasma Enhanced Chemical Vapor Deposition

Y. H. Lee, D. S. Kim, J. H. Lee, 1996 .

Surface damage threshold of Si and SiO2 in electron‐cyclotron‐resonance plasmas

Y. H. Lee, 1992 .

Plasma characterization of an electron cyclotron resonance–radio‐frequency hybrid plasma reactor

Y. H. Lee, J. Heidenreich, Guadalupe Fortuño, 1989 .

Doping effects in reactive plasma etching of heavily doped silicon

A. Bright, Y. H. Lee, Mao-Min Chen, 1985 .

Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms

Y. H. Lee, G. Oehrlein, 1987 .

Near-surface damage and contamination after CF/sub 4//H/sub 2/ reactive ion etching of Si

Y. H. Lee, R. Tromp, J. Tsang, 1985 .

Growth temperature dependence on the formation of carbon-induced Ge quantum dots

Y. H. Lee, E. Suh, H. J. Lee, 2000 .

RIE-induced damage and contamination in silicon

Y. H. Lee, G. Oehrlein, C. Ransom, 1989 .

Electron irradiation effects in lead‐alloy Josephson junctions

Y. H. Lee, P. Brosious, 1982 .

Exact description and data fitting of ion‐implanted dopant profile evolution during annealing

F. Morehead, T. Sedgwick, Y. H. Lee, 1984 .

Mechanical properties of a-C:H and a-C:H/SiOx nanocomposite thin films prepared by ion-assisted plasma-enhanced chemical vapor deposition

Y. H. Lee, B. Farouk, D. S. Kim, 1996 .

Silicon etching mechanism and anisotropy in CF4+O2 plasma

Y. H. Lee, Mao‐Min Chen, Young Hee Lee, 1983 .

Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition

Y. H. Lee, B. Farouk, J. W. Yi, 2003 .

Quantitative insights into the growth mechanisms of nanopores in hexagonal boron nitride

D. Alloyeau, Y. H. Lee, Ki Kang Kim, 2020 .

Silicon near‐surface disorder and etch residues caused by CCIF3/H2 reactive ion etching

S. Chakravarti, Y. H. Lee, G. Oehrlein, 1985 .

Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source

Youngsoo Kim, Y. H. Lee, Soon-Hong Kwon, 2018, Applied Sciences.

Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperature

Y. H. Lee, D. S. Kim, Dong S. Kim, 1995 .

Effects of annealing temperature on the characteristics of HfSixOy/HfO2 high-k gate oxides

H. D. Kim, N. Lee, Y. H. Lee, 2004 .

Correlation of optical and structural properties of light emitting porous silicon

Y. H. Lee, E. Suh, K. Nahm, 1993 .

Light‐emission phenomena from porous silicon: Siloxene compounds and quantum size effect

Y. H. Lee, E. Suh, K. Nahm, 1994 .

DEPOSITION OF THERMALLY STABLE, LOW DIELECTRIC CONSTANT FLUOROCARBON/SIO2 COMPOSITE THIN FILM

Y. H. Lee, D. S. Kim, N. Park, 1996 .

Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

Y. H. Lee, D. Shin, K. Shim, 2004 .

Reactive etching mechanism of tungsten silicide in CF4-O2 plasma☆

A. A. Bright, Kie Y. Ahn, Y. H. Lee, 1984 .

Effects of RF Power on Plasma Phase Reactions and Film Structure in Deposition of a‐C:H by Styrene/Argon Discharge

Y. H. Lee, B. Farouk, D. S. Kim, 1996 .

A novel BaTiO3/SiO2-based voltage-programmable link applicable to on-chip programmable devices

Y. H. Lee, Jae-Sung Lee, Y. Bae, 2000 .