Qin Zhang

发表

Fully-depleted Ge interband tunnel transistor: Modeling and junction formation

A. Seabaugh, S. Sutar, Qin Zhang, 2009 .

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

Huili Grace Xing, Qin Zhang, Yeqing Lu, 2010, IEEE Electron Device Letters.

Analytic expression and approach for low subthreshold-swing tunnel transistors

Wei Zhao, Qin Zhang, A. Seabaugh, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Graphene Nanoribbon Tunnel Transistors

A. Seabaugh, D. Jena, H. Xing, 2008, IEEE Electron Device Letters.

Two-Dimensional Tunnel Transistors Based on ${\rm Bi}_{2}{\rm Se}_{3}$ Thin Film

Giuseppe Iannaccone, Qin Zhang, Gianluca Fiori, 2014, IEEE Electron Device Letters.

Zener tunneling in semiconducting nanotube and graphene nanoribbon p−n junctions

D. Jena, H. Xing, Qin Zhang, 2008, 0806.0139.

High field transport properties of 2D and nanoribbon graphene FETs

S. Koswatta, D. Jena, H. Xing, 2009, 2009 Device Research Conference.

Modified RCA clean transfer of graphene and all-carbon electronic devices fabrication

Kai Yan, Y. Obeng, H. Peng, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Toward clean and crackless transfer of graphene.

Kai Yan, Y. Obeng, Zhongfan Liu, 2011, ACS nano.

Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V

A. Seabaugh, J. Kuo, H. Xing, 2012, 2012 International Electron Devices Meeting.

AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

A. Seabaugh, Rui Li, H. Xing, 2012, IEEE Electron Device Letters.

A unique photoemission method to measure semiconductor heterojunction band offsets

A. Seabaugh, Rui Li, D. Gundlach, 2013 .

Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy

A. Seabaugh, H. Xing, C. Richter, 2012 .

Band Offset and Electron Affinity of Monolayer MoSe2 by Internal Photoemission

Qin Zhang, N. Nguyen, Siyuan Zhang, 2019, Journal of Electronic Materials.

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

S. Datta, Lianmao Peng, X. Liang, 2014, 1410.1109.

Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors.

D. Gundlach, C. Richter, Qin Zhang, 2019, ACS nano.

InAlAs/InGaAs Interband Tunnel Diodes for SRAM

A. Seabaugh, S. Sutar, Qin Zhang, 2010, IEEE Transactions on Electron Devices.

Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide

A. Seabaugh, X. Liang, D. Gundlach, 2012, 1212.5335.

Influence of Metal–Graphene Contact on the Operation and Scalability of Graphene Field-Effect Transistors

S. Koswatta, D. Jena, Qin Zhang, 2011, IEEE Transactions on Electron Devices.

Influence of Metal Contact on the Operation and Scalability of Graphene Field-Effect-Transistors

S. Koswatta, D. Jena, Qin Zhang, 2011 .

Band offset and electron affinity of MBE-grown SnSe2

J. Furdyna, D. Gundlach, Mingda Li, 2018 .

Direct measurement of Dirac point energy at the graphene/oxide interface.

Kang L. Wang, J. Suehle, A. Seabaugh, 2013, Nano letters.

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

Huili Grace Xing, Qin Zhang, Tian Shen, 2012 .

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

Qin Zhang, Alan C. Seabaugh, A. Seabaugh, 2010, Proceedings of the IEEE.

Photo-Induced Magnetic Field Effects in Single Crystalline Tetracene Field-Effect Transistors

D. Gundlach, C. Richter, Qin Zhang, 2016 .

Optimum Bandgap and Supply Voltage in Tunnel FETs

A. Seabaugh, D. Jena, C. Richter, 2014, IEEE Transactions on Electron Devices.

On Transport in Vertical Graphene Heterostructures

G. Fiori, G. Iannaccone, Qin Zhang, 2014, IEEE Electron Device Letters.

Can the Interband Tunnel FET Outperform Si CMOS?

Qin Zhang, A. Seabaugh, Qin Zhang, 2008, 2008 Device Research Conference.

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Rui Li, Chen Chen, Qin Zhang, 2011, IEEE Electron Device Letters.

InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field

Huili Grace Xing, Chen Chen, Rui Li, 2012 .

Direct measurement of Dirac point and Fermi level at graphene/oxide interface by internal photoemission

P. Ye, D. Gundlach, C. Richter, 2012, 70th Device Research Conference.

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Rui Li, Soo Doo Chae, Qin Zhang, 2012, IEEE Electron Device Letters.