A. Lelis

发表

Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

T. McNutt, R. Howell, C. Scozzie, 2009, IEEE Electron Device Letters.

Nature of Transition Layers at the SiO2/SiC Interface | NIST

G. Duscher, M. Das, A. Lelis, 2008 .

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques

N. Goldsman, M. Gurfinkel, Y. Shapira, 2008, IEEE Transactions on Electron Devices.

Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing

T. R. Oldham, A. Lelis, T. Oldham, 1986, IEEE Transactions on Nuclear Science.

Post-Irradiation Effects in Field-Oxide Isolation Structures

H. E. Boesch, J. M. Benedetto, T. R. Oldham, 1987, IEEE Transactions on Nuclear Science.

The nature of the trapped hole annealing process

H. E. Boesch, A. Lelis, T. Oldham, 1989 .

High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation

N. Goldsman, A. Lelis, A. Akturk, 2009 .

A Physical Model of High Temperature 4H-SiC MOSFETs

N. Goldsman, A. Lelis, D. Habersat, 2008, IEEE Transactions on Electron Devices.

Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors

N. Goldsman, C. Scozzie, A. Lelis, 2002 .

Time dependence of switching oxide traps

A. Lelis, T. Oldham, 1994 .

Electron spin resonance evidence that E'/sub /spl gamma// centers can behave as switching oxide traps

J. F. Conley, A. Lelis, P. Lenahan, 1995 .

Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2

J. F. Conley, A. Lelis, P. Lenahan, 1995 .

Numerical Modeling and Characterization of n-Channel 4H-SiC Double-Diffused Vertical Power MOSFET

N. Goldsman, A. Lelis, Jianzhou Wu, 2005, 2005 International Semiconductor Device Research Symposium.

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

J. Suehle, N. Goldsman, M. Gurfinkel, 2008, IEEE Transactions on Electron Devices.

A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

C. Scozzie, V. Veliadis, H. Hearne, 2010, IEEE Electron Device Letters.

Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation

N. Goldsman, A. Lelis, J. McGarrity, 2005, 2005 International Conference On Simulation of Semiconductor Processes and Devices.

Ion implantation and SiC transistor performance

J. Suehle, N. Goldsman, M. Gurfinkel, 2009 .

Investigation of Drain Current Saturation in 4H-SiC MOSFETs

N. Goldsman, A. Lelis, D. Habersat, 2007 .

Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors

A. Lelis, P. Lenahan, C. Cochrane, 2009 .

Identification of trapping defects in 4H-silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance

A. Lelis, P. Lenahan, M. Dautrich, 2006 .

Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications

B. Hull, A. Lelis, A. Ogunniyi, 2008 .

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping

A. Lelis, D. Habersat, F. B. McLean, 2008 .

Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs

A. Lelis, D. Habersat, R. Green, 2015 .

Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs

N. Goldsman, A. Lelis, J. McGarrity, 2007 .

A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

N. Goldsman, A. Lelis, D. P. Ettisserry, 2014 .

Time dependence of bias-stress induced threshold-voltage instability measurements

N. Goldsman, M. Gurfinkel, J. Suehle, 2007, 2007 International Semiconductor Device Research Symposium.

Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices

N. Goldsman, A. Lelis, D. Habersat, 2006 .

Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets

J. Suehle, N. Goldsman, M. Gurfinkel, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients

N. Goldsman, A. Lelis, R. Green, 2020, IEEE Transactions on Electron Devices.

Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress

J. Suehle, N. Goldsman, M. Gurfinkel, 2006, 2006 IEEE International Integrated Reliability Workshop Final Report.

Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

J. Suehle, N. Goldsman, K. Cheung, 2007, 2007 IEEE International Integrated Reliability Workshop Final Report.

Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal

J. Scofield, S. Krishnaswami, B. Hull, 2006 .

The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

A. Lelis, P. Lenahan, M. Anders, 2018, Materials Science Forum.

Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination

A. Lelis, P. Lenahan, C. Cochrane, 2012 .

Structure of 6H silicon carbide/silicon dioxide interface trapping defects

A. Lelis, P. Lenahan, D. Meyer, 2004 .

Effects of carbon-related oxide defects on the reliability of 4H-SiC MOSFETs

N. Goldsman, A. Lelis, A. Akturk, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics

Ronald Green, Neil Goldsman, Aivars J. Lelis, 2010 .

Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements

A. Lelis, D. Habersat, R. Green, 2013 .

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation

N. Goldsman, A. Lelis, D. Habersat, 2009 .

Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?

A. Lelis, P. Lenahan, M. Anders, 2016 .

Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance

A. Lelis, P. Lenahan, C. Cochrane, 2015, IEEE Transactions on Electron Devices.

Identification of Deep Level Defects in SiC Bipolar Junction Transistors

A. Lelis, P. Lenahan, T. Pribicko, 2006 .

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

A. Lelis, P. Lenahan, M. Dautrich, 2006 .

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

A. Lelis, P. Lenahan, D. Meyer, 2004 .

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap

A. Lelis, P. Lenahan, C. Cochrane, 2012 .

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs

A. Lelis, P. Lenahan, C. Cochrane, 2008, 2007 International Semiconductor Device Research Symposium.

Deep level defects which limit current gain in 4H SiC bipolar junction transistors

A. Lelis, P. Lenahan, C. Cochrane, 2007 .

Spin dependent charge pumping: A new tool for MOS interface characterization

J. Ryan, A. Lelis, P. Lenahan, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Spin dependent charge pumping: A new tool for reliability studies

J. Ryan, A. Lelis, P. Lenahan, 2011, 2011 IEEE International Integrated Reliability Workshop Final Report.

Interface Traps in Silicon Carbide MOSFETs

A. Lelis, P. Lenahan, C. Cochrane, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.

Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Joshua A. Taillon, L. Feldman, J. Rozen, 2013 .

Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs

S. Arthur, A. Lelis, P. Lenahan, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations

N. Goldsman, A. Lelis, A. Akturk, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Influences of Bias Interruption and Reapplication on High-Temperature Threshold-Voltage Shifts of SiC DMOSFETs

A. Lelis, D. Habersat, R. Green, 2018, Materials Science Forum.

The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance

A. Lelis, P. Lenahan, C. Cochrane, 2013 .

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

K. Matocha, A. Lelis, P. Lenahan, 2010 .

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

R. Howell, C. Scozzie, V. Veliadis, 2012 .

Detailed Study of Breakdown Voltage and Critical Field in Wide Bandgap Semiconductors

N. Goldsman, A. Lelis, R. Green, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance

Adam J. Morgan, A. Agarwal, A. Lelis, 2020, IEEE Transactions on Electron Devices.

High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

A. Agarwal, S. Ryu, J. Richmond, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Reliability of High Voltage 4H-SiC MOSFET Devices

A. Agarwal, J. Scofield, S. Ryu, 2006 .

Transition layers at the SiO2∕SiC interface

G. Duscher, M. Das, A. Lelis, 2008 .

Reversibility of trapped hole annealing

H. E. Boesch, A. Lelis, T. Oldham, 1988 .

Effect of Dynamic Threshold-Voltage Instability on Dynamic ON-State Resistance in SiC MOSFETs

A. Lelis, D. Habersat, D. Urciuoli, 2022, IEEE Transactions on Electron Devices.

Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Joshua A. Taillon, S. Dhar, A. Lelis, 2018 .

Measurement considerations for evaluating BTI effects in SiC MOSFETs

Ronald Green, Aivars J. Lelis, Daniel B. Habersat, 2018, Microelectron. Reliab..

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

Aivars J. Lelis, Daniel B. Habersat, A. Lelis, 2015, IEEE Transactions on Electron Devices.

Key Reliability Issues for SiC Power MOSFETs

Aivars J. Lelis, R. Green, Daniel B. Habersat, 2013 .

Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements

N. Goldsman, A. Lelis, D. Habersat, 2015 .

Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides

N. Goldsman, A. Lelis, D. Habersat, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Ronald Green, Neil Goldsman, Aivars J. Lelis, 2008 .

Thermal Conductivity of Power Semiconductors—When Does It Matter?

M. Berman, A. Lelis, L. Boteler, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

Patrick M. Lenahan, Aivars J. Lelis, Corey J. Cochrane, 2011 .

Time dependent annealing of radiation-induced leakage currents in MOS devices

J. M. Benedetto, T. R. Oldham, J. Benedetto, 1989 .

Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors.

S. Dhar, D. Morisette, A. Lelis, 2020, Micron.

Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs

N. Goldsman, M. Gurfinkel, J. Suehle, 2008, IEEE Transactions on Electron Devices.

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

Short-Circuit Robustness of SiC Trench MOSFETs

A. Lelis, D. Urciuoli, R. Green, 2018 .

SiC MOSFET reliability and implications for qualification testing

Ronald Green, Aivars J. Lelis, Daniel B. Habersat, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

N. Goldsman, A. Lelis, J. McGarrity, 2006 .

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Aivars J. Lelis, Daniel B. Habersat, A. Lelis, 2016 .

A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit

C. Scozzie, H. Hearne, V. Veliadis, 2008, IEEE Electron Device Letters.

Response of interface traps during high-temperature anneals (MOSFETs)

T. R. Oldham, A. Lelis, T. Oldham, 1991 .

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Neil Goldsman, Aivars J. Lelis, N. Goldsman, 2005 .

High-Temperature Reliability of SiC Power MOSFETs

Ronald Green, Aivars J. Lelis, Daniel B. Habersat, 2011 .

New Insights Into Oxide Trapped Holes And Other Defects: Implications For Reliability Studies

A. Lelis, T. Oldham, 1996 .

The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface

Neil Goldsman, Aivars J. Lelis, Akin Akturk, 2013 .

Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces

N. Goldsman, A. Lelis, A. Akturk, 2014 .

(Invited) Updated Key Issues for SiC MOSFET Reliability

A. Lelis, D. Habersat, D. Urciuoli, 2020 .

Effects of Basal Plane Dislocations on SiC Power Device Reliability

A. Lelis, R. Stahlbush, R. Green, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

The vacuum flashover of Dow-Corning type 704 diffusion-pump oil

A. G. Stewart, A. Lelis, G. Huttlin, 1982, 1982 IEEE International Conference on Electrical Insulation.

Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

N. Goldsman, A. Lelis, A. Akturk, 2012 .

Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

S. Dhar, D. Morisette, A. Lelis, 2021 .

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Anant K. Agarwal, Aivars J. Lelis, John W. Palmour, 2010 .

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

C. Scozzie, H. Hearne, V. Veliadis, 2012, IEEE Electron Device Letters.

Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface

A. Lelis, P. Lenahan, M. Anders, 2017 .

Application of reliability test standards to SiC Power MOSFETs

Ronald Green, A. Lelis, D. Habersat, 2011, 2011 International Reliability Physics Symposium.

SiC MOSFET oxide-trap two-way tunneling model

N. Goldsman, A. Lelis, D. Habersat, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

The benefits and current progress of SiC SGTOs for pulse power applications

A. Agarwal, R. Callanan, C. Scozzie, 2009, 2009 International Semiconductor Device Research Symposium.

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Ronald Green, Neil Goldsman, Aivars J. Lelis, 2012 .

Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC

J. Palmour, D. Lichtenwalner, C. Scozzie, 2014 .

Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs

Ronald Green, Daniel B. Habersat, Aivars J. Lelis, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps

A. Lelis, D. Habersat, R. Green, 2016 .

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

N. Goldsman, A. Lelis, A. Akturk, 2015 .

AC-Stress Degradation in SiC MOSFETs

A. Lelis, D. Habersat, 2023, Materials Science Forum.

AC-Stress Degradation and Its Anneal in SiC MOSFETs

A. Lelis, D. Habersat, 2022, IEEE Transactions on Electron Devices.

SiC MOSFET threshold-stability issues

Ronald Green, Aivars J. Lelis, Daniel B. Habersat, 2017 .

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs

Ronald Green, Aivars J. Lelis, Daniel B. Habersat, 2016 .

Comparison of Test Methods for Proper Characterization of VT in SiC MOSFETs

A. Lelis, D. Habersat, R. Green, 2016 .

Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors

Patrick M. Lenahan, Aivars J. Lelis, Jody A. Fronheiser, 2011 .

Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs

A. Lelis, D. Habersat, R. Green, 2019, Materials Science Forum.

Temperature-dependent threshold stability of COTS SiC MOSFETs during gate switching

Ronald Green, Aivars J. Lelis, Daniel B. Habersat, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Demonstration of High Voltage (15kV) Split-Gate 4H-SiC MOSFETs

Adam J. Morgan, A. Lelis, Jinwook Seo, 2021, IEEE Workshop on Wide Bandgap Power Devices and Applications.

Channel Hot-Carrier Effect of 4H-SiC MOSFET

Jason P. Campbell, J. Suehle, K. Sheng, 2009 .

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices

A. Lelis, D. Habersat, F. B. McLean, 2006 .

Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress

A. Lelis, R. Green, F. Nouketcha, 2019, Materials Science Forum.

Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Ronald Green, Damian Urciuoli, Dimeji Ibitayo, 2010, 2010 IEEE Energy Conversion Congress and Exposition.

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

Neil Goldsman, Aivars J. Lelis, Daniel B. Habersat, 2006 .

A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

N. Goldsman, A. Lelis, J. McGarrity, 2006 .

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance

R. J. Waskiewicz, A. Lelis, P. Lenahan, 2017, IEEE Transactions on Nuclear Science.

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge

N. Goldsman, A. Lelis, D. Habersat, 2009 .

3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Lin Cheng, Sei-Hyung Ryu, John Palmour, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Density functional and Monte Carlo-based electron transport simulation in 4H-SiC(0001)/SiO2 DMOSFET transition region

N. Goldsman, A. Lelis, A. Akturk, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Silicon Carbide-Silicon Dioxide Transition Layer Mobility

N. Goldsman, A. Lelis, A. Akturk, 2012 .

The effects of different silicon carbide — Silicon dioxide interface passivations on transition region mobility and transport

N. Goldsman, A. Lelis, A. Akturk, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces

N. Goldsman, A. Lelis, A. Akturk, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Modeling the Effect of Conduction Band Density of States on Interface Trap Occupation and Its Influence on 4H-SiC MOSFET Performance

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2012 .

Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs

N. Goldsman, A. Lelis, A. Akturk, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation

N. Goldsman, A. Lelis, D. Habersat, 2006 .

Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

C. L. Reynolds, Aivars J. Lelis, Sei-Hyung Ryu, 2009 .

15 kV n-GTOs in 4H-SiC

J. Casady, S. Ryu, B. Hull, 2019, Materials Science Forum.

Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing

A. Lelis, D. Habersat, R. Green, 2012 .

Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors

J. P. Ashton, D. Lichtenwalner, A. Lelis, 2019, Journal of Applied Physics.

Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination

A. Lelis, P. Lenahan, D. Meyer, 2005 .

Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

R. Gutmann, A. Agarwal, T. Chow, 2004 .

Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification

Ronald Green, Daniel B. Habersat, Aivars J. Lelis, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance

Mark Anders, Patrick M. Lenahan, R. J. Waskiewicz, 2018, Microelectron. Reliab..

Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs

N. Goldsman, A. Lelis, D. P. Ettisserry, 2017, IEEE Transactions on Electron Devices.

Evaluations of threshold voltage stability on COTS SiC DMOSFETs using fast measurements

Ronald Green, Aivars J. Lelis, Daniel B. Habersat, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Modeling of oxygen-vacancy hole trap activation in 4H-SiC MOSFETs using density functional theory and rate equation analysis

N. Goldsman, A. Lelis, A. Akturk, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Effect of Stress and Measurement Conditions in Determining the Reliability of SiC Power MOSFETs

Aivars J. Lelis, Daniel B. Habersat, A. Lelis, 2013 .

Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices

A. Lelis, D. Habersat, R. Green, 2012 .

(Invited) Effect of Threshold-Voltage Instability on SiC Power MOSFET High-Temperature Reliability

Ronald Green, Aivars J. Lelis, Daniel B. Habersat, 2011 .

Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V

Aivars J. Lelis, Daniel B. Habersat, A. Lelis, 2011 .

X-ray lithography effects on MOS oxides

A. Lelis, T. Oldham, 1992 .

Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability

N. Goldsman, A. Lelis, D. Habersat, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.

Modeling and Characterization of Bias Stress-Induced Instability of SiC MOSFETs

N. Goldsman, A. Lelis, D. Habersat, 2006, 2006 IEEE International Integrated Reliability Workshop Final Report.

Critical Issues for MOS Based Power Devices in 4H-SiC

Anant K. Agarwal, Aivars J. Lelis, Charles Scozzie, 2009 .