I. Abuishmais

Dynamic characterization of 63 mQ, 1.2 kV, normally-off SiC VJFET

T. Undeland, I. Abuishmais, 2011, 8th International Conference on Power Electronics - ECCE Asia.

Characterization of Body Diodes in the-State-of-the-Art SiC FETs-are They Good Enough as Freewheeling Diodes?

T. Undeland, O. Midtgård, J. K. Langelid, 2018, 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe).

Design Aspects of a Single-Output Multi-String WLED Driver Using 40 nm CMOS Technology

I. Abuishmais, F. Shahroury, Hani H. Ahmad, 2022 .

Driving of a GaN enhancement mode HEMT transistor with zener diode protection for high efficiency and low EMI

S. Basu, T. Undeland, I. Abuishmais, 2017, 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).

Bidirectional Dual Active Bridge for Interfacing Battery Energy Storage Systems with DC Microgrid

I. Abuishmais, F. Shahroury, 2021, 2021 International Conference on Electrical, Computer and Energy Technologies (ICECET).

Switching characteristics of NPT-IGBT power module at different temperatures

Tore Undeland, Di Xiao, Ibrahim Abuishmais, 2010, Proceedings of 14th International Power Electronics and Motion Control Conference EPE-PEMC 2010.