I. Raaijmakers

发表

Characterization of the topography of vacuum-deposited films. 1: Light scattering.

M. Verkerk, I. Raaijmakers, 1986, Applied optics.

A comparison of the reaction of titanium with amorphous and monocrystalline silicon

Ki-Bum Kim, I. Raaijmakers, 1990 .

Energy distribution of negative O− and OH− ions emitted from YBaCuO and iron garnet targets by dc and rf magnetron sputtering

I. Raaijmakers, J. Krumme, Ron A. A. Hack, 1991 .

Stacking faults and precipitates in annealed and co-sputtered C49 TiSi2 films

I. Raaijmakers, A. Reader, H. van Houtum, 2020 .

Nucleation and growth of titanium silicide studied by in situ annealing in a transmission electron microscope

A. H. Reader, I. Raaijmakers, Ivo J. M. M. Raaijmakers, 1987 .

Crystallization of amorphous Ti-Si alloy thin films: microstructure and resistivity

I. Raaijmakers, A. Reader, A. H. V. Ommen, 1989 .

The formation of an amorphous silicide by thermal reaction of sputter‐deposited Ti and Si layers

I. Raaijmakers, A. Reader, P. Oosting, 1988 .

(Invited) Current and Future Applications of ALD in Micro-Electronics

I. Raaijmakers, 2011, ECS Transactions.

Initial Stage of the Ultrathin Oxide Growth in Water Vapor on Si ( 100 ) Surface

Yong Bae Kim, I. Raaijmakers, M. Tuominen, 1999 .

Al planarization processes for multilayer metallization of quarter micrometer devices

I. Raaijmakers, H. Kieu, Zheng Xu, 1994 .

Influence of grain size on the transformation temperature of C49 TiSi2 to C54 TiSi2

I. Raaijmakers, Ivo J. M. M. Raaijmakers, H. J. W. van Houtum, 1987 .

Reactively sputtered TiN as a diffusion barrier between Cu and Si

Ki-Bum Kim, I. Raaijmakers, Shizhi Wang, 1990 .

First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of Oxygen

I. Raaijmakers, Ivo J. M. M. Raaijmakers, Harrie J. W. Van Houtum, 1985 .

The interaction of hafnium and aluminium thin films on silicon substrates

I. Raaijmakers, J. Daams, 1985 .

A Solid State Amorphisation Reaction in Ti-Si Diffusion Couples: The Phase Field

I. Raaijmakers, A. Reader, P. Oosting, 1987 .

Nucleation phenomena during titanium silicon reaction

Ki-Bum Kim, I. Raaijmakers, L. J. Ijzendoorn, 1989 .

Enabling technologies for forming and contacting shallow junctions in Si: HF-vapor cleaning and selective epitaxial growth of Si and SiGe

I. Raaijmakers, H. Sprey, D. Meyer, 1999 .

Energy Distribution of Negative Oxygen Ions Emitted from YBaCuO and Iron Garnet Targets by dc- and rf-Magnetron Sputtering

I. Raaijmakers, J. Krumme, Ron A. A. Hack, 1991 .

MOCVD-TiN Barrier Layers for ULSI Applications

S. Ramaswami, E. Broadbent, I. Raaijmakers, 1992 .

The Effect of Density and Microstructure on the Performance of TiN Barrier Films in Cu Metallization

Ki-Bum Kim, Ki-Chul Park, I. Raaijmakers, 1996 .

Low temperature metal-organic chemical vapor deposition of advanced barrier layers for the microelectronics industry

I. Raaijmakers, 1994 .

Low temperature MOCVD of advanced barrier layers for the microelectronics industry

I. Raaijmakers, Jack Yang, 1993 .

Contact hole fill with low temperature LPCVD TiN

I. Raaijmakers, A. Sherman, 1990, Seventh International IEEE Conference on VLSI Multilevel Interconnection.

Microstructure and barrier properties of reactively sputtered Ti-W nitride

Ki-Bum Kim, I. Raaijmakers, L. Gutai, 1990 .

A Phase Diagram Approach for Predicting Reactions in Al/TiW(-Nitride) Thin-Film Systems

R. Sinclair, I. Raaijmakers, A. Morgan, 1990 .

Characterization of the topography of vacuum-deposited films. 2: Ellipsometry.

M. Verkerk, I. Raaijmakers, 1986, Applied Optics.

Topographic characterization of vacuum-deposited films by optical methods

M. Verkerk, I. Raaijmakers, 1985 .