W. Lin

Casimir effect on the pull-in parameters of nanometer switches

W. Lin, Y. Zhao, 2005 .

Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance

K. Pey, W. Lin, Chih-Hang Tung, 2005, IEEE Transactions on Electron Devices.

Low Transparency Current Density and Low Internal Loss of 1060-nm InGaAs Laser With GaAsP–GaAs Superlattices as Strain-Compensated Layer

W. Lin, J. Horng, H. Tseng, 2009, IEEE Photonics Technology Letters.

Single-step deposition of high-mobility graphene at reduced temperatures

D. Boyd, W. Lin, N. Yeh, 2015, Nature Communications.

DBIE shape and hardness dependence on gate oxide breakdown location in MOSFET channel

K. Pey, W. Lin, C. Tung, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Dielectric-breakdown-induced epitaxy: a universal breakdown defect in ultrathin gate dielectrics

K. Pey, W. Lin, C. Tung, 2004, IEEE Transactions on Device and Materials Reliability.

Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern

W.H. Lin, K. Pey, W. Lin, 2002, Digest. International Electron Devices Meeting,.