F. Hsueh

发表

A Wideband Low Noise Amplifier With 4 kV HBM ESD Protection in 65 nm RF CMOS

S. Hsu, C. Jou, Ming-Hsien Tsai, 2009, IEEE Microwave and Wireless Components Letters.

60GHz high-gain low-noise amplifiers with a common-gate inductive feedback in 65nm CMOS

Guo-Wei Huang, Chewn-Pu Jou, Hsieh-Hung Hsieh, 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium.

An analog front-end circuit with dual-directional SCR ESD protection for UHF-band passive RFID tag

Ming-Hsien Tsai, Ming-Hsiang Song, Chewn-Pu Jou, 2011, 2011 IEEE International Conference on RFID.

A 0.66erms− Temporal-Readout-Noise 3-D-Stacked CMOS Image Sensor With Conditional Correlated Multiple Sampling Technique

Shang-Fu Yeh, Fu-Lung Hsueh, Kuo-Yu Chou, 2018, IEEE Journal of Solid-State Circuits.

0.7-in. 1280x1024 active-matrix electroluminescent display using a 12-μm pixel structure

K. Ping, Patrick J. Green, Fu-Lung Hsueh, 1998, Defense, Security, and Sensing.

Session 11 overview: Emerging memory and wireless technology

Fu-Lung Hsueh, Shinichiro Mutoh, F. Hsueh, 2013, ISSCC.

Two-carrier conduction in MOS tunnel oxides—1 Experimental results

L. Faraone, F. Hsueh, J. Simmons, 1984 .

Characteristics of metal/tunnel-oxide/n/p+ silicon switching devices—II: Two-dimensional effects in oxide-isolated structures

U. Mishra, J. Simmons, L. Faraone, 1982 .

A leading-edge 0.9µm pixel CMOS image sensor technology with backside illumination: Future challenges for pixel scaling

C.S. Tsai, Y.P. Chao, S.G. Wuu, 2010, 2010 International Electron Devices Meeting.

Determination of the switching criterion for metal/tunnel-oxide/N/P+silicon switching devices

U. Mishra, J. Simmons, L. Faraone, 1981, IEEE Electron Device Letters.

A 17.5–26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

Ming-Hsien Tsai, Chewn-Pu Jou, Fu-Lung Hsueh, 2012, IEEE Microwave and Wireless Components Letters.

Design of on-chip microwave filters in integrated fan-out wafer level packaging (InFO-WLP) technology

Ming-Hsien Tsai, Tzong-Lin Wu, Chewn-Pu Jou, 2015, 2015 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC).

A 53.6 GHz direct injection-locked frequency divider with a 72% locking range in 65 nm CMOS technology

Wen-Lin Chen, Guo-Wei Huang, Chewn-Pu Jou, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

CMOS Image Sensor Random Telegraph Noise Time Constant Extraction From Correlated To Uncorrelated Double Sampling

Shang-Fu Yeh, Fu-Lung Hsueh, Kuo-Yu Chou, 2017, IEEE Journal of the Electron Devices Society.

A 0.54-0.55 THz 2×4 coherent source array with EIRP of 24.4 dBm in 65nm CMOS technology

Hsin-Chia Lu, Fu-Lung Hsueh, Yu-Teng Chang, 2015, 2015 IEEE MTT-S International Microwave Symposium.

Extraction and Estimation of Pinned Photodiode Capacitance in CMOS Image Sensors

S. Wuu, F. Hsueh, Kuo-Yu Chou, 2014, IEEE Journal of the Electron Devices Society.

3D IC heterogeneous integration of GPS RF receiver, baseband, and DRAM on CoWoS with system BIST solution

H. C. Lin, M. F. Chen, Doug Yu, 2013, 2013 Symposium on VLSI Circuits.

A Bluetooth Low-Energy Transceiver With 3.7-mW All-Digital Transmitter, 2.75-mW High-IF Discrete-Time Receiver, and TX/RX Switchable On-Chip Matching Network

Chewn-Pu Jou, Robert Bogdan Staszewski, Masoud Babaie, 2017, IEEE Journal of Solid-State Circuits.

A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

Fu-Lung Hsueh, Robert B. Staszewski, Masoud Babaie, 2016, IEEE Journal of Solid-State Circuits.

A Fully Integrated 28 nm Bluetooth Low-Energy Transmitter with 36 % System Efficiency at 3 dBm

Chewn-Pu Jou, Robert Bogdan Staszewski, Masoud Babaie, 2017 .

A 0.5V 1.6mW 2.4GHz fractional-N all-digital PLL for Bluetooth LE with PVT-insensitive TDC using switched-capacitor doubler in 28nm CMOS

Teerachot Siriburanon, Chewn-Pu Jou, Robert Bogdan Staszewski, 2017, 2017 Symposium on VLSI Circuits.

10.2 A 38mW 40Gb/s 4-lane tri-band PAM-4 / 16-QAM transceiver in 28nm CMOS for high-speed Memory interface

Mau-Chung Frank Chang, Fu-Lung Hsueh, Po-Tsang Huang, 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

A 0.66e−rms temporal-readout-noise 3D-stacked CMOS image sensor with conditional correlated multiple sampling (CCMS) technique

Fu-Lung Hsueh, Shang-Fu Yeh, Kuo-Yu Chou, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

Two-carrier conduction in MOS tunnel—Oxides II—Theory

L. Faraone, F. Hsueh, J. Simmons, 1984 .