V. Tilak

发表

Effect of passivation on AlGaN/GaN HEMT device performance

Lester F. Eastman, William J. Schaff, James R. Shealy, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Degradation characteristics of AlGaN-GaN high electron mobility transistors

Lester F. Eastman, Ho-Young Cha, James R. Shealy, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

Progress in High-Power, High Frequency AlGaN/GaN HEMTs

L. Eastman, J. Shealy, J. Smart, 2002 .

Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions

Lester F. Eastman, V. Kaper, James R. Shealy, 2003 .

Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT

L. Eastman, J. Shealy, V. Tilak, 2003, 61st ARFTG Conference Digest, Spring 2003..

Self-heating effects in AlGaN/GaN high-power HEMTs

A. F. Allen, A. P. Zhang, V. Tilak, 2003, 61st Device Research Conference. Conference Digest (Cat. No.03TH8663).

GaN-based Schottky diodes for hydrogen sensing in transformer oil

V. Tilak, P. Sandvik, Elena Babes-Dornea, 2006 .

A broadband GaN push-pull distributed microwave power amplifier

L. Eastman, J. Shealy, K. Webb, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

Jacek A. Majewski, Lester F. Eastman, Martin Eickhoff, 2002 .

High-field effects in silicon nitride passivated GaN MODFETs

Lester F. Eastman, V. Tilak, Hyungtak Kim, 2003 .

Hot electron effects on undoped AlGaN/GaN high electron mobility transistors

L. Eastman, J. Shealy, V. Tilak, 2002, GaAs Reliability 2002 Workshop.

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

Lester F. Eastman, V. Kaper, James R. Shealy, 2002 .

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

H. Kim, V. Kaper, V. Tilak, 2001, IEEE Electron Device Letters.

Cascode connected AlGaN/GaN HEMTs on SiC substrates

L. Eastman, J. Shealy, J. Smart, 2000, IEEE Microwave and Guided Wave Letters.

Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment

L. Eastman, N. Klein, J. Smart, 2003 .

Defense Technical Information Center Compilation Part Notice ADP 015079 TITLE : Dependence of Power and Efficiency of A 1 GaN / GaN HEMT ' s on the Load

L. Eastman, J. Shealy, J. Smart, 2022 .

Measurement of piezoelectric coefficient of gallium nitride using metal-insulator-semiconductor capacitors

A. Knobloch, V. Tilak, Jie Jiang, 2007 .

Modulation of Surface Barrier in AlGaN/GaN Heterostructures

L. Eastman, V. Tilak, H. Cha, 2002 .

AlGaN/GaN lateral polarity heterostructures

A. P. Lima, R. Dimitrov, O. Ambacher, 2001 .

Fabrication and characterization of m‐plane (1‐100) GaN based metal‐oxide‐semiconductor capacitors

K. Matocha, G. Dunne, V. Tilak, 2008 .

Polarization Induced Charge at Heterojunctions of the III–V Nitrides and Their Alloys

O. Ambacher, L. Eastman, B. Foutz, 1999 .

Undoped AlGaN/GaN HEMTs for microwave power amplification

Lester F. Eastman, Oliver Ambacher, William J. Schaff, 2001 .

THlB-1 Intrinsic Noise Characteristics of AlGaN/GaN HEMTs

L. Eastman, K. Webb, V. Tilak, 2002 .

Intrinsic noise characteristics of AlGaN/GaN HEMTs

L. Eastman, K. Webb, V. Tilak, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs

Lester F. Eastman, Kevin J. Webb, V. Tilak, 2003 .

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Lester F. Eastman, Martin Eickhoff, James S. Speck, 2003 .

Dynamic loadline analysis of AlGaN/GaN HEMTs

Lester F. Eastman, V. Kaper, James R. Shealy, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

Lester F. Eastman, V. Tilak, A. P. Zhang, 2003 .

Comparison of metal-oxide-semiconductor capacitors on c- and m-plane gallium nitride

K. Matocha, G. Dunne, V. Tilak, 2007 .

Pt/GaN Schottky diodes for harsh environment NO sensing applications

K. Matocha, V. Tilak, P. Sandvik, 2005 .

Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD)

V. Tilak, P. Sandvik, F. Shahedipour-Sandvik, 2007 .

Silicon carbide oxidation in the presence of cesium: Modeling and analysis

K. Matocha, V. Smentkowski, V. Tilak, 2010 .

Impact ionization in high performance AlGaN/GaN HEMTs

V. Tilak, L. Eastman, V. Tilak, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Piezoresistive and piezoelectric effects in GaN

V. Tilak, Jie Jiang, A. Vertiatchikh, 2006 .

Pt/GaN schottky diodes for hydrogen gas sensors

Vinayak Tilak, Oliver Ambacher, Volker Cimalla, 2006 .

A Study of Hydrogen Sensing Performance of Pt–GaN Schottky Diodes

V. Cimalla, V. Lebedev, O. Ambacher, 2006, IEEE Sensors Journal.

Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis

Lester F. Eastman, James R. Shealy, M. Ramonas, 2003 .

11. Inversion Layer Electron Transport in 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistors

V. Tilak, 2011 .

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface

K. Matocha, V. Tilak, 2011 .

Inversion layer electron transport in 4H‐SiC metal–oxide–semiconductor field‐effect transistors

V. Tilak, 2009 .

Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination

Lester F. Eastman, Michael G. Spencer, V. Tilak, 2003 .

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

V. Tilak, L. Eastman, J. Shealy, 2003, IEEE Electron Device Letters.

Hot electron induced degradation of undoped AlGaN/GaN HFETs

Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, 2003, Microelectron. Reliab..

Validation of an analytical large signal model for AlGaN/GaN HEMTs

L. F. Eastman, J. A. Smart, V. Tilak, 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

Energy and momentum relaxation of hot electrons in GaN/AlGaN

V. Tilak, S. Gokden, N. Balkan, 2002 .

Excess low-frequency noise in AlGaN'GaN-based high-electron-mobility transistors

Lester F. Eastman, A. E. Belyaev, Svetlana Vitusevich, 2002 .

300°C Silicon Carbide Integrated Circuits

Vinayak Tilak, Emad Andarawis Andarawis, Peter Almern Losee, 2011 .

Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers

V. Tilak, K. Matocha, G. Dunne, 2007, IEEE Transactions on Electron Devices.

Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs

L. Eastman, N. Klein, J. Smart, 2003 .

Combustion synthesis of graphene and ultracapacitor performance

V. Tilak, Sundeep Kumar, M. S. Kishore, 2013, Bulletin of Materials Science.

Development of a 300°C capable SiC based operational amplifier

P. Losee, V. Tilak, Z. Stum, 2010 .

Compact modeling of silicon carbide lateral MOSFETs for extreme environment integrated circuits

A. Kashyap, V. Tilak, Cheng-Po Chen, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Characterization of LTCC-Thick Film Technology for 300°C Packaging

Vinayak Tilak, R. Wayne Johnson, David Shaddock, 2010 .

Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

Lester F. Eastman, William J. Schaff, James R. Shealy, 2001 .

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

V. Tilak, K. Matocha, G. Dunne, 2009, IEEE Transactions on Electron Devices.

Development of pit‐defect free smooth a‐plane GaN surfaces on r‐plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study

K. Matocha, V. Tilak, M. Jamil, 2006 .

High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates

V. Tilak, Sungjae Lee, Hyungtak Kim, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface

K. Matocha, V. Tilak, J. Fronheiser, 2010 .

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability

K. Matocha, Liangchun Yu, V. Tilak, 2011 .

Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs

K. Matocha, G. Dunne, V. Tilak, 2010 .

300C Capable Digital Integrated Circuits in SiC Technology

V. Tilak, A. Patil, Naresh Rao, 2012 .

Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels

L. Eastman, N. Klein, J. Smart, 2003 .

SiC-based FET for detection of NOx and O2 using InSnOx as a gate material

Vinayak Tilak, Oliver Ambacher, Volker Cimalla, 2007 .

Phase noise study of AlGaN/GaN HEMT X-band oscillator

L. Eastman, J. Shealy, N. Klein, 2005 .