M. Germain

发表

ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

E. Vandamme, C. Gaquiere, M. Germain, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design

M. Germain, G. Borghs, J. Das, 2006, IEEE Transactions on Electron Devices.

Integrated AlGaN/GaN HEMTs in MCM-D technology

D. Schreurs, R. Mertens, R. Liu, 2010, 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).

Efficiency Enhancement of Harmonic-Tuned GaN Power Amplifier Using Doherty like Load Modulation

W. De Raedt, M. Germain, D. Schreurs, 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

C. Gaquiere, N. Vellas, Sylvain Delage, 2005 .

GaN-Based Power Transistors for Future Power Electronic Converters

J. Driesen, J. V. D. Keybus, M. Germain, 2010 .

Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs

D. Schreurs, I. Angelov, R. Liu, 2009, 2009 9th International Conference on Telecommunication in Modern Satellite, Cable, and Broadcasting Services.

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

N. Rolland, M. Germain, F. Medjdoub, 2014 .

Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics

M. Germain, J. Derluyn, E. Meissner, 2018 .

Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H-SiC

R. Belmans, G. Borghs, M. Germain, 2006 .

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Gustaaf Borghs, Anne Lorenz, Joff Derluyn, 2007 .

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

O. Richard, H. Bender, G. Borghs, 2008 .

Radiation hardness of AlxGa1-xN photodetectors exposed to Extreme UltraViolet (EUV) light beam

Kai Cheng, Robert Mertens, Piet De Moor, 2009, Optics + Optoelectronics.

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

M. Meneghini, G. Meneghesso, M. Germain, 2020, Materials.

Three-dimensional thermal analysis of a flip-chip mounted AlGaN/GaN HFET using confocal micro-Raman spectroscopy

G. Borghs, M. Germain, M. Kuball, 2006, IEEE Transactions on Electron Devices.

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

M. Germain, F. Medjdoub, F. Gucmann, 2019, Selected Topics in Electronics and Systems.

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

M. Germain, F. Medjdoub, J. Derluyn, 2018, 2018 13th European Microwave Integrated Circuits Conference (EuMIC).

Thermal analysis of AlGaN/GaN HEMTs

Bart Vandevelde, Wouter Ruythooren, Herman Oprins, 2005 .

A Temperature Analysis of High-power AlGaN/GaN HEMTs

H. Oprins, G. Borghs, M. Germain, 2006, 0709.1868.

Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures

D. Schreurs, G. Borghs, M. Germain, 2006 .

Investigation of Defect Levels in Mg‐Doped GaN Schottky Structures by Thermal Admittance Spectroscopy

M. Germain, N. D. Nguyen, B. Schineller, 2001 .

Transfer from MHEMT to GaN HEMT Technology: Devices and Integration

D. Schreurs, G. Borghs, M. Germain, 2005 .

GaN-on-Si power field effect transistors

S. Decoutere, G. Borghs, M. Germain, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

M. Meneghini, G. Meneghesso, M. Germain, 2019, physica status solidi (a).

Gallium nitride MEMS resonators: how residual stress impacts design and performances

L. Buchaillot, D. Théron, M. Germain, 2018 .

Gallium nitride MEMS resonators: how residual stress impacts design and performances

L. Buchaillot, D. Théron, M. Germain, 2016, 2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP).

Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective

M. Germain, M. Kuball, H. Ji, 2009 .

AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE

G. Borghs, M. Germain, M. Leys, 2008 .

Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

D. Schreurs, G. Borghs, I. Wolf, 2004 .

Growth and characterization of unintentionally doped GaN grown on silicon(1 1 1) substrates

Gustaaf Borghs, Phil Dawson, Joff Derluyn, 2008 .

Performances of AlGaN/Ga Technolog

N. Vellas, M. Germain, D. Ducatteau, 2004 .

Detailed Analysis of Parasitic Loading Effects on Power Performance of GaN-on-Silicon HEMTs

D. Schreurs, G. Borghs, M. Germain, 2009 .

Scaling effects in AlGaN/GaN HEMTs: Comparison between Monte Carlo simulations and experimental data

A. Carlo, M. Germain, W. Ruythooren, 2006 .

Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes

R. Belmans, G. Borghs, M. Germain, 2005 .

Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

R. Belmans, G. Borghs, M. Germain, 2004 .

Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors

Stephen E. Flower, M. Germain, T. James, 2011 .

Photorefractive ZnTe grown by traveling heater method

M. Germain, P. Lemaire, N. D. Nguyen, 2003 .

The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN

G. Van Tendeloo, Wouter Ruythooren, Joff Derluyn, 2005 .

Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, 2002 .

GaN‐on‐Si HEMT stress under high electric field condition

Denis Marcon, Robert Mertens, Gustaaf Borghs, 2009 .

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

E. Delos, Bertrand Boudart, Marianne Germain, 2006, Microelectron. Reliab..

Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer

Gustaaf Borghs, Wouter Ruythooren, J. Das, 2005 .

Switching assessment of GaN transistors for power conversion applications

M. Van Hove, M. Germain, G. Borghs, 2009, 2009 13th European Conference on Power Electronics and Applications.

On the Determination of Charge Profiles in Epitaxial Layers of ZnSe by Capacitance Measurements

M. Germain, M. Heuken, R. Evrard, 1998 .

Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy

G. Borghs, Liping Zhang, M. Germain, 2010 .

Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors

G. Van Tendeloo, Anne Lorenz, Joff Derluyn, 2006 .

High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Gustaaf Borghs, Marianne Germain, Stefan Degroote, 2008 .

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Gustaaf Borghs, G. Van Tendeloo, Joff Derluyn, 2006 .

Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation

H. Bender, G. Borghs, P. Favia, 2012 .

Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Michael Heuken, M. Luenenbuerger, Marianne Germain, 2009 .

Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs

S. Decoutere, M. Germain, J. Das, 2010, 68th Device Research Conference.

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

M. Van Hove, M. Germain, G. Borghs, 2010, IEEE Electron Device Letters.

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon‐ion implant‐isolation technology

C. Gaquière, N. Vellas, M. Germain, 2005 .

Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes

M. Germain, N. D. Nguyen, M. Schmeits, 2001 .

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Gustaaf Borghs, Puneet Srivastava, Marleen Van Hove, 2010 .

High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers.

Dominique Schreurs, Kang-Hoon Choi, Gustaaf Borghs, 2003 .

Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer

J. Misiewicz, M. Germain, R. Kudrawiec, 2008 .

Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs

A. Caddemi, W. De Raedt, M. Germain, 2006, IEEE Transactions on Microwave Theory and Techniques.

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

M. Germain, F. Medjdoub, J. Derluyn, 2020, International Symposium on Power Semiconductor Devices and IC's.

Solid phase epitaxy of amorphous Ge films deposited by PECVD

G. Borghs, M. Germain, M. Leys, 2011 .

Wide-band hybrid power amplifier design using GaN FETs

Dominique Schreurs, Gustaaf Borghs, W. De Raedt, 2008 .

GaN power amplifier design based on artificial neural network modelling

W. De Raedt, Dongping Xiao, D. Schreurs, 2007, 2007 European Microwave Integrated Circuit Conference.

GaN FET's non-linear model constructed by adaptive multi-bias S-parameter measurements

W. De Raedt, M. Germain, D. Schreurs, 2005, 2005 66th ARFTG Microwave Measurement Conference (ARFTG).

GaN-on-Si for Power Technology

M. Germain, J. Derluyn, D. Visalli, 2013 .

Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures

I. Moerman, M. Germain, G. V. Tendeloo, 2002 .

GaN detector development for particle and X-ray detection

P. Sellin, M. Germain, A. Owens, 2012 .

Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes

M. Germain, N. D. Nguyen, B. Schineller, 2001 .

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Gustaaf Borghs, Marleen Van Hove, Joff Derluyn, 2009 .

Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

Gustaaf Borghs, Anne Lorenz, Marianne Germain, 2009 .

Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting

G. Borghs, M. Germain, Q. Ma, 2014, Journal of Electronic Materials.