B. Edward

Self-heating effects in AlGaN/GaN high-power HEMTs

A. F. Allen, A. P. Zhang, V. Tilak, 2003, 61st Device Research Conference. Conference Digest (Cat. No.03TH8663).

9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias

A. F. Allen, James W. Kretchmer, B. J. Edward, 2003 .

V-band, space-based phased arrays

D. Rees, B. Edward, J. Kinzel, 1987 .

Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

A. F. Allen, A. P. Zhang, J. Garrett, 2003 .

Electrical Instability Suppression in 4H-SiC Power MESFETs

A. F. Allen, A. P. Zhang, J. Garrett, 2002 .