A. Chini

发表

High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

A. Chini, S. Keller, S. Heikman, 2004, IEEE Electron Device Letters.

G. Meneghesso, E. Zanoni, C. Canali, 2004, IEEE Transactions on Electron Devices.

Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs

G. Verzellesi, M. Missous, A. Chini, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs

G. Meneghesso, F. Fantini, E. Zanoni, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs

G. Verzellesi, F. Fantini, G. Meneghesso, 2009, 2009 IEEE International Reliability Physics Symposium.

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

M. Meneghini, G. Meneghesso, A. Chini, 2013, IEEE Transactions on Electron Devices.

Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

R. Coffie, A. Chini, D. Buttari, 2004, IEEE Electron Device Letters.

Analytical Model for Power Switching GaN-Based HEMT Design

A. Chini, M. Esposto, S. Rajan, 2011, IEEE Transactions on Electron Devices.

Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers

G. Verzellesi, F. Fantini, M. Meneghini, 2016, IEEE Transactions on Electron Devices.

Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation

F. Fantini, G. Meneghesso, A. Chini, 2012, IEEE Transactions on Electron Devices.

Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs During Pulse-Mode Operation

A. Chini, F. Iucolano, 2017, IEEE Journal of the Electron Devices Society.

Trapping and high field related issues in GaN power HEMTs

G. Verzellesi, M. Meneghini, G. Meneghesso, 2014, 2014 IEEE International Electron Devices Meeting.

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, IEEE Transactions on Electron Devices.

Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Giovanni Verzellesi, Fausto Fantini, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

Umesh K. Mishra, Alessandro Chini, Sarah L. Keller, 2004 .

N-polar GaN epitaxy and high electron mobility transistors

James S. Speck, Umesh K. Mishra, Uttam Singisetti, 2013 .

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

R. Coffie, A. Chini, D. Buttari, 2004, IEEE Electron Device Letters.

2.1 A/mm current density AlGaN/GaN HEMT

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2003 .

Power and linearity characteristics of GaN MISFETs on sapphire substrate

S. Denbaars, U. Mishra, S. Keller, 2004, IEEE Electron Device Letters.

Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs

G. Verzellesi, A. Chini, N. Zagni, 2021, Semiconductor Science and Technology.

Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs

D. Pavlidis, S. Hsu, G. Meneghesso, 2001, IEEE Electron Device Letters.

Hole impact ionization coefficient in [100]-oriented In/sub 0.53/Ga/sub 0.47/As based on pnp InAlAs/InGaAs HBTs

D. Pavlidis, S. Hsu, G. Meneghesso, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013 .

Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

P. Pavan, G. Verzellesi, A. Chini, 2021, Electronics.

Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al 2 O 3 -on-GaN MOS diodes

A. Chini, S. Rajan, S. Krishnamoorthy, 2012 .

An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

F. Fantini, G. Meneghesso, A. Chini, 2011 .

Study of GaN HEMTs electrical degradation by means of numerical simulations

F. Fantini, A. Chini, V. Di Lecce, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Selective dry etching of GaN over AlGaN in BCl/sub 3//SF/sub 6/ mixtures

H. Xing, T. Palacios, L. McCarthy, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

A C-band high-dynamic range GaN HEMT low-noise amplifier

A. Chini, R.A. York, U.K. Mishra, 2004, IEEE Microwave and Wireless Components Letters.

A new field-plated GaN HEMT structure with improved power and noise performance

U. Mishra, R. York, S. Keller, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

TCAD optimization of field-plated InAlAs-InGaAs HEMTs

G. Verzellesi, M. Missous, A. Chini, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

U. Mishra, J. Speck, A. Chini, 2006, 2006 64th Device Research Conference.

Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology

L. Mariucci, V. Camarchia, A. Chini, 2006, 2006 European Microwave Integrated Circuits Conference.

Fabrication and characterization of N-face AlGaN/GaN/AlGaN HEMTs

U. Mishra, J. Speck, A. Chini, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

S. Denbaars, U. Mishra, N. Zhang, 2002 .

HEMTs ON SIC

G. Verzellesi, G. Meneghesso, A. Chini, 2005 .

Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs

T. Palacios, S. Keller, U. Mishra, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES

H. Xing, T. Palacios, L. McCarthy, 2004 .

A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps

M. Vanzi, M. Meneghini, G. Meneghesso, 2012, 2012 International Electron Devices Meeting.

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs

V. Vinciguerra, A. Chini, F. Roccaforte, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs

F. Puglisi, P. Pavan, G. Verzellesi, 2021, IEEE Transactions on Electron Devices.

The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs

F. Puglisi, P. Pavan, G. Verzellesi, 2020, Journal of Computational Electronics.

DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues

Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi, 2005, Microelectron. Reliab..

Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC

G. Meneghesso, E. Zanoni, G. Verzellesi, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Reliability issues of Gallium Nitride High Electron Mobility Transistors

Gaudenzio Meneghesso, Enrico Zanoni, Augusto Tazzoli, 2010, International Journal of Microwave and Wireless Technologies.

Reliability Investigation of GaN HEMTs for MMICs Applications

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, Micromachines.

Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013, IEEE Transactions on Electron Devices.

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2013, Microelectron. Reliab..

Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Chini, 2009 .

A novel GaN HEMT degradation mechanism observed during HTST test

Alessandro Chini, Ferdinando Iucolano, Santo Reina, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

M. Meneghini, G. Meneghesso, A. Chini, 2015, IEEE Electron Device Letters.

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2015, Microelectron. Reliab..

Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2011, 2011 International Electron Devices Meeting.

RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements

Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Chini, 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

Reverse gate bias stress induced degradation of GaN HEMT

M. Meneghini, G. Meneghesso, A. Chini, 2009 .

Field Plate Devices for RF Power Applications

A. Chini, 2010 .

GaN-based power devices: Physics, reliability, and perspectives

G. Verzellesi, M. Meneghini, G. Meneghesso, 2021, Journal of Applied Physics.

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

Experimental and numerical analysis of VTH and RON drifts in E-mode GaN HEMTs during switch-mode operation

A. Chini, F. Iucolano, 2019, Materials Science in Semiconductor Processing.

The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs

A. Chini, M. Esposto, V. D. Lecce, 2012, Journal of Electronic Materials.

High linearity GaN HEMT power amplifier with pre-linearization gate diode

V. Paidi, A. Chini, Likun Shen, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

G. Verzellesi, A. Chini, N. Zagni, 2021, IEEE Transactions on Electron Devices.

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Umesh K. Mishra, Alessandro Chini, Tomas Palacios, 2003 .

Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2002 .

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

A. Chini, D. Buttari, S. Heikman, 2006, IEEE Transactions on Electron Devices.

“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

F. Puglisi, P. Pavan, G. Verzellesi, 2021, IEEE Transactions on Electron Devices.

The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates

Giovanni Verzellesi, Francesco Maria Puglisi, Alessandro Chini, 2019, physica status solidi (a).

Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 IEEE International Reliability Physics Symposium.

p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

U. Mishra, S. Keller, S. Heikman, 2002, IEEE Electron Device Letters.

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

G. Verzellesi, A. Chini, N. Zagni, 2023, IEEE Electron Device Letters.

Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs

G. Verzellesi, C. Canali, G. Meneghesso, 2001, 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567).

From T-CAD simulations to large signal model for GaN RF device

A. Chini, C. Miccoli, F. Iucolano, 2020, 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE).

Influence of device self-heating on trap activation energy extraction

M. Meneghini, G. Meneghesso, A. Chini, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications

A. Chini, N. Zagni, M. Cioni, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

G. Meneghesso, F. Fantini, E. Zanoni, 2008, IEEE Transactions on Device and Materials Reliability.

Characterization of GaN-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies

G. Salviati, G. Meneghesso, A. Chini, 2002 .

Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications

G. Verzellesi, M. Meneghini, G. Meneghesso, 2023, IEEE Transactions on Device and Materials Reliability.

Role of carbon in dynamic effects and reliability of 0.15-μm AlGaN/GaN HEMTs for RF power amplifiers

G. Verzellesi, M. Meneghini, G. Meneghesso, 2022, OPTO.

Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs

L. Selmi, M. Meneghini, G. Meneghesso, 2021, IEEE Transactions on Electron Devices.

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

F. Puglisi, P. Pavan, G. Verzellesi, 2021, Micromachines.

Insights into the off-state breakdown mechanisms in power GaN HEMTs

Giovanni Verzellesi, Francesco Maria Puglisi, A. Chini, 2019, Microelectronics Reliability.

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Chini, 2003 .

Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz

Umesh K. Mishra, Giacinta Parish, Alessandro Chini, 2003 .

Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs

Giovanni Verzellesi, Alessandro Bertacchini, Alessandro Chini, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Symmetrical VTH/RON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs

G. Verzellesi, A. Chini, N. Zagni, 2022, 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).

Impact of Gate and Drain Leakage on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs

A. Chini, C. Miccoli, F. Iucolano, 2023, 2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE).

High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology

Mark J. W. Rodwell, S. I. Long, Umesh K. Mishra, 2003 .

Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs

G. Verzellesi, C. Canali, A. Chini, 2005, IEEE Transactions on Electron Devices.

Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs

C. Miccoli, A. Chini, F. Iucolano, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications

G. Verzellesi, A. Chini, N. Zagni, 2022, Micromachines.

Traps localization and analysis in GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2014, Microelectron. Reliab..

Use of multichannel heterostructures to improve the access resistance and f/sub T/ linearity in GaN-based HEMTs

T. Palacios, S. Keller, U. Mishra, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..