T. Wisleder

30-W/mm GaN HEMTs by field plate optimization

U. Mishra, M. Moore, P. Parikh, 2004, IEEE Electron Device Letters.

8-watt GaN HEMTs at millimeter-wave frequencies

Y.-F. Wu, P. Parikh, A. Saxler, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

40-W/mm Double Field-plated GaN HEMTs

P. Parikh, A. Saxler, M. Moore, 2006, 2006 64th Device Research Conference.

Noise characteristics of field-plated GaN HEMTs

YiFeng Wu, M. Moore, P. Parikh, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Noise characteristics of field-plated GaN HEMTs

M. Moore, P. Parikh, Y. Wu, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Linearity performance of GaN HEMTs with field plates

M. Moore, P. Parikh, Y. Wu, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

GaN HEMTs: material, device, circuit technology and applications

J. Palmour, U. Mishra, M. Moore, 2004, International Meeting for Future of Electron Devices, 2004..

Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements

T. Wisleder, J. Greene, M. Efremov, 2000 .

High-gain microwave GaN HEMTs with source-terminated field-plates

Y.-F. Wu, P. Parikh, M. Moore, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..