B. Peres

发表

Field-plated 0.25 μm gate-length AlGaN/GaN hemts on 6H-SiC with power density of 9.1 W/mm at 18 GHz

Ilesanmi Adesida, V. Kumar, B. Peres, 2005 .

High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance

Lester F. Eastman, Ho-Young Cha, Milan Pophristic, 2007 .

Small signal measurement of Sc2O3 AlGaN/GaN moshemts

B. S. Kang, C. R. Abernathy, J. Kim, 2004 .

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

C. R. Abernathy, J. Kim, F. Ren, 2003 .

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

J. Kim, F. Ren, S. Pearton, 2003 .

X-ray diffraction analysis of threading dislocation densities in epitaxial layers as grown by MOCVD

I. Ferguson, B. Peres, Z. Feng, 2003, CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671).

Design of edge termination for GaN power Schottky diodes

F. Ren, S. Pearton, B. Peres, 2005 .

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Y. Makarov, B. Albert, B. Peres, 2004 .

X-Ray Diffraction Analysis of GaN and AlGaN

I. Ferguson, S. Guo, B. Peres, 2002 .

Growth of High Al Concentration AlGaN for Solar Blind Photodetector Applications

Milan Pophristic, Ian T. Ferguson, Marion B. Reine, 2001 .

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

Y. Makarov, B. Albert, B. Peres, 2004 .

Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays

M. B. Reine, C. Cooke, R. D. Dupuis, 2006, SPIE OPTO.

High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition

M. Pophristic, B. Peres, Shiping P. Guo, 2003 .

Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application

Shiping Guo, Milan Pophristic, Jinhyun Lee, 2002, SPIE Optics + Photonics.

Gallium nitride-based devices and methods of manufacture

B. Peres, Shiping Guo, I. Eliashevich, 2003 .

Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 °C

Ilesanmi Adesida, B. Peres, Anirban Basu, 2006 .

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

Ho-Young Cha, M. Pophristic, B. Peres, 2006, IEEE Transactions on Electron Devices.

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

Albert G. Baca, S. J. Pearton, T. Jenkins, 2003 .