K. Kasahara

发表

Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability

K. Matsunaga, Y. Okamoto, A. Wakejima, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Monolithic ultra-broadband transimpedance amplifiers using AlGaAs/GaAs heterojunction bipolar transistors

K. Honjo, K. Kasahara, N. Nagano, 1994 .

Low Resistance Contact and K-Band High power performance for AlGaN/GaN HJFETs

H. Miyamoto, Y. Ando, Y. Okamoto, 2002 .

15 W AlGaN/GaN Heterojunction FET on Sapphire Substrate

H. Miyamoto, Y. Ando, Y. Okamoto, 2001 .

Microwave Performance of 0.3-µm Gate-Length Multi-Finger AlGaN/GaN Heterojunction FETs with Minimized Current Collapse

K. Kasahara, Y. Ohno, K. Kunihiro, 2000 .

AlGaN/GaN heterojunction FETs for high‐power applications

H. Miyamoto, Y. Ando, Y. Okamoto, 2003 .

Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs

Yuji Ando, Masaaki Kuzuhara, Yasuhiro Okamoto, 2003 .

Experimental evaluation of impact ionization coefficients in GaN

K. Kunihiro, K. Kasahara, Y. Ohno, 1999, IEEE Electron Device Letters.

Gate length scaling for Al/sub 0.2/Ga/sub 0.8/N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect

H. Miyamoto, Y. Ando, T. Nakayama, 2000 .

Gate length scaling for Al_ Ga_ N/GaN HJFETs : Two-dimensional full band Monte Carlo simulation including polarization effect

H. Miyamoto, Y. Ando, T. Nakayama, 2000 .

A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate

Y. Okamoto, M. Kuzuhara, N. Hayama, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).