A. Chakraborty

发表

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

S. Keller, S. Denbaars, L. McCarthy, 2006, IEEE Electron Device Letters.

AlGaN/GaN HEMTs with an InGaN-based back-barrier

S. Denbaars, T. Palacios, S. Keller, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

R. Coffie, A. Chini, D. Buttari, 2004, IEEE Electron Device Letters.

Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates

S. Denbaars, S. Nakamura, U. Mishra, 2005 .

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

A. Uedono, S. Denbaars, S. Kamiyama, 2006, Nature materials.

Characterization of blue-green m-plane InGaN light emitting diodes

S. Denbaars, S. Nakamura, K. Fujito, 2009 .

Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN

S. Denbaars, H. Ohta, S. Nakamura, 2010 .

MBE-grown AlGaN/GaN HEMTs on SiC

U. Mishra, J. Speck, A. Chakraborty, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates

S. Denbaars, S. Nakamura, S. Keller, 2006 .

Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10 1 1 ) GaN templates

A. Chakraborty, 2005 .

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2004 .

High-performance E-mode AlGaN/GaN HEMTs

S. Keller, S. Denbaars, T. Palacios, 2006, IEEE Electron Device Letters.

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

R. Coffie, A. Chini, D. Buttari, 2004, IEEE Electron Device Letters.

Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate

S. Denbaars, S. Nakamura, U. Mishra, 2005 .

Nitride-based high electron mobility transistors with a GaN spacer

S. Denbaars, T. Palacios, S. Keller, 2006 .

Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate

S. Denbaars, H. Ohta, S. Nakamura, 2009 .

m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers

S. Denbaars, H. Ohta, S. Nakamura, 2009 .

Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

S. Denbaars, S. Nakamura, S. Keller, 2007 .

Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs

U. Mishra, S. Heikman, Y. Dora, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

F. Recht, L. McCarthy, U. Mishra, 2006, IEEE Electron Device Letters.

Selective dry etching of GaN over AlGaN in BCl/sub 3//SF/sub 6/ mixtures

H. Xing, T. Palacios, L. McCarthy, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Ultrafast dynamics of recombinative desorption of molecular oxygen from the single crystal Pd(1 1 0) surface

A. Chakraborty, A. Bera, A. Bhattacharya, 2021 .

Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures

Nidhi, T. Palacios, U. Mishra, 2006, IEEE Electron Device Letters.

Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy

S. Denbaars, S. Nakamura, J. Speck, 2005 .

Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN

S. Denbaars, S. Nakamura, U. Mishra, 2006 .

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

A. Uedono, S. Denbaars, S. Kamiyama, 2007 .

Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

S. Denbaars, S. Nakamura, S. Keller, 2006 .

Structural and electrical characterization of a‐plane GaN grown on a‐plane SiC

S. Denbaars, S. Keller, U. Mishra, 2003 .

Demonstration of a GaN‐spacer high electron mobility transistor with low alloy scattering

S. Denbaars, T. Palacios, U. Mishra, 2005 .

Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs

T. Palacios, S. Keller, U. Mishra, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Interdigitated Multipixel Arrays for the Fabrication of High-Power Light-Emitting Diodes With Very Low Series Resistances, Reduced Current Crowding, and Improved Heat Sinking

U. Mishra, A. Chakraborty, L. Shen, 2007, IEEE Transactions on Electron Devices.

Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances

S. Denbaars, U. Mishra, L. Shen, 2006 .

Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature

S. Denbaars, S. Nakamura, A. Chakraborty, 2006 .

Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films

S. Denbaars, S. Nakamura, U. Mishra, 2007 .

Nonpolar a-plane p-type GaN and p-n Junction Diodes

S. Denbaars, H. Xing, S. Keller, 2004 .

SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES

H. Xing, T. Palacios, L. McCarthy, 2004 .

Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate

S. Denbaars, U. Mishra, J. Speck, 2007 .

Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

S. Keller, S. Heikman, S. Denbaars, 2005, IEEE Transactions on Electron Devices.

Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs

S. Denbaars, T. Palacios, S. Keller, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

Hongtao Xu, C. Sanabria, M. Rodwell, 2006, IEEE Electron Device Letters.

Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature

S. Denbaars, S. Nakamura, A. Chakraborty, 2007 .

High-power AlGaN/GaN HEMTs for Ka-band applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE Electron Device Letters.

High performance AlGaN/GaN HEMTs with a field plated gate structure

A. Chakraborty, S. Keller, D. Buttari, 2003, International Semiconductor Device Research Symposium, 2003.

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

S. Denbaars, H. Ohta, S. Nakamura, 2009 .

Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2006 .

Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Optical waveguide simulations for the optimization of InGaN-based green laser diodes

Anurag Tyagi, James S. Speck, Shuji Nakamura, 2010 .

Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

S. Denbaars, S. Nakamura, S. Keller, 2010 .

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

S. Keller, S. Heikman, S. Denbaars, 2006, IEEE Electron Device Letters.

Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2006 .

Effect of ohmic contacts on buffer leakage of GaN transistors

S. Keller, S. Heikman, S. Denbaars, 2006, IEEE Electron Device Letters.

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

S. Denbaars, T. Palacios, N. Fichtenbaum, 2006, IEEE Electron Device Letters.

Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

S. Denbaars, H. Ohta, S. Nakamura, 2009 .

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Umesh K. Mishra, Alessandro Chini, Tomas Palacios, 2003 .

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

A. Chini, D. Buttari, S. Heikman, 2006, IEEE Transactions on Electron Devices.

Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2006 .

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2007 .

Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes

James S. Speck, Shuji Nakamura, Daniel A. Cohen, 2011 .

Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

Anurag Tyagi, Meng Zhang, Michael R. Krames, 2012 .

Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, Arpan Chakraborty, 2004 .

Optimization of AlGaN/GaN HEMTs for high frequency operation

S. Denbaars, T. Palacios, S. Keller, 2006 .

Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .