M. Forte-Poisson

发表

Characteristics of Al/sub 2/O/sub 3//AllnN /GaN MOSHEMT

C. Gaquiere, E. Kohn, Sylvain Delage, 2007 .

Low-loss and low-drive-voltage electro-optical phase modulator at 10.6 μm

M. Papuchon, M. Forte-Poisson, R. Blondeau, 1990 .

Deuterium passivation of electrically active defects in nonintentionally doped n-GaN

S. Delage, M. Forte-Poisson, J. Chevallier, 2007 .

Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

M. Tordjman, M. Forte-Poisson, P. Gamarra, 2013 .

Low‐pressure metalorganic chemical vapor deposition growth and characterization of δ‐doped InP

M. Forte-Poisson, C. Brylinski, J. Portal, 1989 .

Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

A. Paccagnella, S. Delage, M. Meneghini, 2015 .

Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN

A. Ramdane, A. Ougazzaden, Anthony Martinez, 2012 .

Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers

G. Radnóczi, M. Forte-Poisson, B. Pécz, 1997 .

Thermal oxidation of lattice matched InAlN/GaN heterostructures

S. Delage, C. Gaquière, J. Carlin, 2010 .

Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition

M. Forte-Poisson, C. Brylinski, J. Duchemin, 1985 .

Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC

M. Forte-Poisson, B. Pécz, L. Tóth, 2003 .

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

A. Wilkinson, M. Forte-Poisson, C. Trager-Cowan, 2017 .

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

M. Kneissl, G. Patriarche, P. Ruterana, 2014 .

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure

Dionyz Pogany, Gottfried Strasser, Marie-Antoinette di Forte-Poisson, 2012, Microelectron. Reliab..

Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs

Michael Heuken, D. Lancefield, Pierre Gibart, 2001 .

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2015, Microelectron. Reliab..

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT

Enrico Zanoni, Sylvain Delage, Christian Dua, 2005 .

Magnetophonon resonance in n+n-n+ InP up to 40 T

M. Forte-Poisson, L. Eaves, C. Brylinski, 1988 .

Electric field-induced quasi-elastic inter-landau level scattering in the space-charge-limited magnetoconductivity of n+n−n+ InP structures

M. Pate, G. Hill, M. Forte-Poisson, 1986 .

Cyclotron resonance and polaron effects in a two-dimensional electron gas in GaInAs

M. Razeghi, A. Cho, S. Huant, 1984 .

Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices

M. Razeghi, A. Cho, M. Forte-Poisson, 1984 .

Two-dimensional persistent photoconductivity and magnetic freeze-out in lightly “δ”-doped InP

M. Forte-Poisson, J. Portal, D. Lavielle, 1990 .

A new approach to the “gettering” of oxygen during the growth of GaAlAs by low pressure MOCVD

S. Hersee, M. Forte-Poisson, J. Duchemin, 1981 .

GaAs-based materials for heterojunction bipolar transistor's: reliability results and MMIC applications

S. Delage, M. Forte-Poisson, S. Cassette, 2001 .

Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition

G. Radnóczi, M. Forte-Poisson, B. Pécz, 1999 .

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Steven A. Ringel, Umesh K. Mishra, S. P. DenBaars, 2013 .

Surface potential of n- and p-type GaN measured by Kelvin force microscopy

D. Théron, J. Jacquet, M. Forte-Poisson, 2008 .

The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures

J. Olivier, J. Persio, M. Forte-Poisson, 1999 .

TEM investigation of defect structure in GaAlN/GaN heterostructures

M. Forte-Poisson, B. Pécz, Zs. Makkai, 2003 .

V-shaped defects connected to inversion domains in AlGaN layers

M. Forte-Poisson, B. Pécz, R. Dunin‐Borkowski, 2001 .

LPMOCVD growth of GaN on silicon carbide

J. Persio, M. Tordjman, M. Magis, 2003 .

Chapter 5 – MOCVD Growth of Group III Nitrides for High-power, High-frequency Applications

M. Magis, M. Forte-Poisson, M. Tordjmann, 2005 .

High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz

S. Hersee, M. Forte-Poisson, C. Brylinski, 1984 .

Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

M. Tordjman, M. Forte-Poisson, B. Schauwecker, 2015 .

In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs

F. Medjdoub, M. Tordjman, M. Forte-Poisson, 2017 .

First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT

Herve Blanck, Sylvain Delage, Eric Chartier, 1991 .

Band offset of GaAs-GaInP heterojunctions

S. Delage, H. Blanck, M. Forte-Poisson, 1993 .

Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy

J. Persio, M. Tordjman, M. Forte-Poisson, 1998 .

Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

J. Persio, M. Tordjman, M. Forte-Poisson, 1999 .

Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

M. Razeghi, M. Forte-Poisson, G. Colomer, 1987 .

Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP

M. Razeghi, M. Forte-Poisson, J. Duchemin, 1983 .

STRAIN DISTRIBUTION IN GAN HEXAGONS MEASURED BY RAMAN SPECTROSCOPY

M. Forte-Poisson, T. Monteiro, E. Pereira, 1999 .