S. Rumyantsev

发表

Low frequency noise in heavily doped polysilicon thin film resistors

M. Deen, S. Rumyantsev, J. Orchard-Webb, 1998 .

Selective gas sensing with a single pristine graphene transistor.

M. Shur, Guanxiong Liu, A. Balandin, 2012, Nano letters.

Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors

M. Shur, A. Agarwal, J. Palmour, 2012 .

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

J. Palmour, M. Levinshtein, Ranbir Singh, 1999 .

Temperature dependence of turn-on processes in 4H–SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2001 .

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

J. Palmour, M. Levinshtein, Ranbir Singh, 2001 .

Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor

A. Agarwal, S. Ryu, J. Palmour, 2001 .

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

M. Shur, A. Agarwal, S. Ryu, 2009 .

Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors

M. Shur, W. Knap, S. Rumyantsev, 2002 .

Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

M. Shur, G. Simin, M. Khan, 2002 .

Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

M. Shur, T. Skotnicki, C. Fenouillet-Béranger, 2006 .

Resonant and voltage-tunable terahertz detection in InGaAs /InP nanometer transistors

A. Shchepetov, D. Seliuta, G. Valušis, 2006 .

SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION

M. Shur, G. Bersuker, D. Veksler, 2011 .

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

M. Shur, Guanxiong Liu, A. Balandin, 2013 .

Handbook Series on Semiconductor Parameters

M. Shur, M. Levinshtein, S. Rumyantsev, 1996 .

An ultra-stable non-coherent light source for optical measurements in neuroscience and cell physiology

M. Shur, B. Salzberg, A. L. Obaid, 2005, Journal of Neuroscience Methods.

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

M. Shur, M. Levinshtein, S. Rumyantsev, 2001 .

SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES

M. Shur, R. Gaska, R. Gaska, 2002 .

Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

Michael S. Shur, Frederic Boeuf, Thomas Skotnicki, 2004 .

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Michael S. Shur, Michael E. Levinshtein, Grigory Simin, 2000 .

Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition.

E. Reed, A. Balandin, S. Rumyantsev, 2019, Nano letters.

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

W. Knap, S. Rumyantsev, M. Sakowicz, 2020, Materials.

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

M. Shur, A. A. Balandin, S. Rumyantsev, 2010, 2011 21st International Conference on Noise and Fluctuations.

Flicker Noise in Bilayer Graphene Transistors

Dong Yan, S. Rumyantsev, M. Shur, 2009, IEEE Electron Device Letters.

Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor

Michael S. Shur, Xiang Zhang, F. Teppe, 2005 .

Detection of sub-Terahertz and Terahertz radiation by plasma waves in silicon field effect transistors

J. Lusakowski, F. Teppe, N. Dyakonova, 2004, Proceedings of IEEE Sensors, 2004..

ERRATA: "THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES"

S. J. Allen, M. Shur, P. Burke, 2002 .

Terahertz Beam Testing of Millimeter Wave Monolithic Integrated Circuits

Sergey L. Rumyantsev, Sergey Rudin, Michael Shur, 2017, IEEE Sensors Journal.

Homodyne phase sensitive terahertz spectrometer

M. Shur, S. Rumyantsev, V. Kachorovskii, 2017 .

Low-frequency noise in terahertz plasmonic field effect transistor sensors

M. Shur, S. Rumyantsev, S. Rudin, 2017, 2017 IEEE SENSORS.

SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION

Michael S. Shur, Raj Jammy, G. Bersuker, 2013 .

Plasmonic and bolometric terahertz graphene sensors

M. Shur, A. Balandin, W. Knap, 2013, 2013 IEEE SENSORS.

Performance limits for field effect transistors as terahertz detectors

W. Knap, M. Shur, S. L. Rumyantsev, 2013 .

High voltage SiC diodes with small recovery time

Pavel Ivanov, Michael E. Levinshtein, S. N. Yurkov, 2000 .

Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors

M. Shur, N. Maleev, V. Ustinov, 2015 .

Nanometer size field effect transistors for terahertz detectors

D Coquillat, T Nagatsuma, M. Shur, 2013, Nanotechnology.

Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

Michael S. Shur, F. Teppe, Wojciech Knap, 2005 .

Terahertz detection by GaN/AlGaN transistors

Michael S. Shur, C. Gaquiere, F. Teppe, 2006 .

Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs

Michael Shur, Dmitry Veksler, Fernando Guarin, 2007 .

Low-frequency noise in cadmium-selenide thin-film transistors

M. Deen, S. Rumyantsev, D. Xu, 2000 .

1/f noise in pentacene organic thin film transistors

M. Shur, T. Jackson, D. Gundlach, 2000 .

Generation-recombination noise in MOSFETs

Sergey L. Rumyantsev, M. Jamal Deen, M E Levinshtein, 1999 .

1/f Noise Behavior in Pentacene Organic Thin Film Transistors

M. Shur, T. Jackson, D. Gundlach, 1999 .

1/f noise in strongly doped n-type GaAs under band-band illumination conditions

M. Levinshtein, F. Pascal, S. Rumyantsev, 1997 .

Insulated Gate Nitride-Based Field Effect Transistors

M. Shur, G. Simin, R. Gaska, 2010 .

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

A. Balandin, S. Rumyantsev, Subhajit Ghosh, 2021, Applied Physics Letters.

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors

M. Shur, N. Pala, M. Levinshtein, 2001 .

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

W. Knap, S. Rumyantsev, C. Skierbiszewski, 2016 .

Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors

M. Deen, S. Rumyantsev, 2000 .

Low frequency noise in 4H-SiC BJTs

A. Agarwal, J. Palmour, M. Levinshtein, 2004 .

Visible–blind photoresponse of GaN-based surface acoustic wave oscillator

M. Shur, M. Khan, R. Gaska, 2002 .

The discrete noise of magnons

A. Khitun, F. Kargar, A. A. Balandin, 2018, Applied Physics Letters.

Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators

M. Shur, W. Knap, J. Łusakowski, 2011 .

GaN Heterodimensional Schottky Diode for THz Detection

M. Shur, D. Veksler, N. Pala, 2006, 2006 5th IEEE Conference on Sensors.

Low-frequency noise spectroscopy of charge-density-wave phase transitions in vertical quasi-2D 1T-TaS2 devices

A. Balandin, S. Rumyantsev, F. Kargar, 2019, Applied Physics Express.

AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

W. Knap, S. Rumyantsev, M. Sakowicz, 2019, Semiconductor Science and Technology.

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

M. Shur, B. Hull, M. Das, 2008 .

Sic Materials and Devices: Volume 2

M. Shur, M. Levinshtein, S. Rumyantsev, 2007 .

Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride

M. Shur, M. Levinshtein, M. Khan, 2002 .

Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors

M. Shur, K. Fobelets, S. Rumyantsev, 2007 .

Electrical properties of the conducting polydiacetylene poly-1,1,6,6-tetraphenylhexadiinediamine

M. Levinshtein, S. Rumyantsev, V. Marikhin, 1997 .

Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization

M. Shur, G. Bersuker, D. Veksler, 2011 .

Current Carrying Capacity of Quasi-1D ZrTe3 Van Der Waals Nanoribbons

A. Balandin, S. Rumyantsev, K. Bozhilov, 2018, IEEE Electron Device Letters.

Graphene Epoxy-Based Composites as Efficient Electromagnetic Absorbers in the Extremely High Frequency Band.

A. Balandin, W. Knap, S. Rumyantsev, 2020, ACS applied materials & interfaces.

Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

M. Shur, N. Pala, M. Levinshtein, 2001 .

Tunneling mechanism of the 1/f noise in GaN/AlGaN heterojunction field-effect transistors

M. Shur, M. Levinshtein, S. Rumyantsev, 2005 .

Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors

M. Shur, N. Pala, G. Simin, 2001 .

The effect of a transverse magnetic field on 1/f noise in graphene

M. Shur, M. Goiran, M. Levinshtein, 2013 .

Effect of ambient pressure on resistance and resistance fluctuations in single-wall carbon nanotube devices

P. Ajayan, M. Shur, N. Pala, 2006 .

Low-Frequency Noise in Quasi-1D (TaSe$_4$)$_2$I Weyl Semimetal Nanoribbons

A. Balandin, S. Rumyantsev, Dong Yan, 2022, 2208.06476.

Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

W. Knap, S. Rumyantsev, M. Sakowicz, 2021, Micromachines.

Low frequency noise and trap density in GaN/AlGaN field effect transistors

I. Kašalynas, S. Rumyantsev, M. Sakowicz, 2019, Applied Physics Letters.

Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots.

A. Balandin, S. Rumyantsev, M. Law, 2019, Nanoscale.

LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC

M. Shur, V. Tokranov, S. Oktyabrsky, 2011 .

1/ f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area

M. Shur, Guanxiong Liu, A. Balandin, 2011 .

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

M. Shur, S. Rumyantsev, S. Jin, 2009 .

Low-Frequency Current Fluctuations in Graphene-like Exfoliated Thin-Films of Topological Insulators

M. Shur, D. Teweldebrhan, A. Balandin, 2011, 1102.0961.

Generation-recombination and 1/f noise in carbon nanotube networks

S. Rumyantsev, D. Lioubtchenko, J. Smulko, 2021 .

Low frequency noise in 2D materials: Graphene and MoS2

M. Shur, Guanxiong Liu, A. Balandin, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

1/ f Noise Characteristics of MoS 2 Thin-Film Transistors: Comparison of Single and

M. Shur, A. Balandin, S. Rumyantsev, 2015 .

Origin of 1/f noise in graphene multilayers: Surface vs. volume

M. Shur, Guanxiong Liu, A. Balandin, 2012, 1211.5155.

Noise in micro-bolometers with silicon-germanium thermo-sensing layer

S. Rumyantsev, M. Moreno, A. Kosarev, 2010 .

Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices

M. Shur, A. Balandin, S. Rumyantsev, 2014, 1411.5393.

Comparative analysis of sub-THz detection in graphene, GaN HEMT, and FinFET devices

J. A. Delgado Notario, S. Rumyantsev, P. Prystawko, 2022, 2022 24th International Microwave and Radar Conference (MIKON).

Current-driven THz emission from AlGaN/GaN grating gate structures in the magnetic field

F. Teppe, S. Rumyantsev, M. Sakowicz, 2022, 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).

Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics.

S. Rumyantsev, M. Sakowicz, A. Krajewska, 2022, 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).

Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications.

M. Shur, Guanxiong Liu, A. Balandin, 2016, Nanoscale.

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

M. Shur, A. Balandin, S. Rumyantsev, 2014, 1412.6698.

Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires.

M. Shur, Guanxiong Liu, A. Balandin, 2016, Nano letters.

Low-noise top-gate graphene transistors

M. Shur, Guanxiong Liu, A. Balandin, 2009, 0908.3304.

Flicker Noise in Bilayer Graphene Transistors

Dong Yan, M. Shur, D. Teweldebrhan, 2008, IEEE Electron Device Letters.

Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors

M. E. Levinshtein, M. Shur, A. Agarwal, 2013 .

Selective Gas Sensing With $h$ -BN Capped MoS2 Heterostructure Thin-Film Transistors

M. Shur, Guanxiong Liu, A. Balandin, 2015, IEEE Electron Device Letters.

Reduction of 1/f noise in graphene after electron-beam irradiation

M. Shur, A. Balandin, S. Rumyantsev, 2012, 1211.5159.

Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation

S. Rumyantsev, M. Haras, L. Österlund, 2022, ACS sensors.

Low-noise near-ballistic BN-graphene-BN heterostructure field-effect transistors for energy efficient electronic applications

M. Shur, A. Balandin, S. Rumyantsev, 2015, 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S).

Observation of the memory steps in graphene at elevated temperatures

M. Shur, Guanxiong Liu, A. Balandin, 2011, 1101.3605.

Graphene/AlGaN/GaN RF Switch

W. Knap, S. Rumyantsev, A. Krajewska, 2021, Micromachines.

Low-frequency 1/f noise in bismuth selenide Topological Insulators

M. Shur, D. Teweldebrhan, A. Balandin, 2011, 2011 21st International Conference on Noise and Fluctuations.

Broadening of noise spectra in semiconductors and the 1/f1.5 problem

M. Levinshtein, N. Dyakonova, S. Rumyantsev, 1995 .

High hole lifetime (3.8 /spl mu/s) in 4H-SiC diodes with 5.5 kV blocking voltage

J. Palmour, M. Levinshtein, O. Kordina, 1999 .

Performance limits for field effect transistors as terahertz detectors

M. Shur, W. Knap, S. Rumyantsev, 2013, 1302.7089.

Above and below threshold terahertz plasmon modes in AlGaN/GaN grating-gate HEMTs

S. Rumyantsev, M. Sakowicz, G. Cywiński, 2022, 2022 24th International Microwave and Radar Conference (MIKON).

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

M. Shur, M. Levinshtein, A. Shchepetov, 2007 .

Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions

M. Shur, A. Agarwal, M. Das, 2011, 2011 21st International Conference on Noise and Fluctuations.

Generation-recombination noise in forward biased 4H-SiC p-n diodes

M. Shur, D. Veksler, B. Hull, 2006 .

Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

M. Shur, A. Agarwal, S. Ryu, 2001 .

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors

J. A. Delgado-Notario, S. Rumyantsev, P. Prystawko, 2022, Applied Physics Letters.

Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands

A. Balandin, S. Rumyantsev, Subhajit Ghosh, 2021, Advanced materials.

Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

M. Shur, N. Pala, M. Levinshtein, 2003 .

1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors

M. Shur, K. Fobelets, S. Rumyantsev, 2009 .

Noise and trap density in n-channel strained-Si / SiGe modulation doped field effect transistors

M. Shur, K. Fobelets, S. Rumyantsev, 2009 .

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe4)2I Weyl Semimetal Nanoribbons

A. Balandin, S. Rumyantsev, Dong Yan, 2022, Advanced Electronic Materials.

MATERIALS PROPERTIES OF NITRIDES: SUMMARY

M. Shur, M. Levinshtein, S. Rumyantsev, 2004 .

Low frequency noise and long-term stability of noncoherent light sources

Michael S. Shur, Sergey L. Rumyantsev, Brian M. Salzberg, 2004 .

AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime

W. Knap, P. Prystawko, P. Sai, 2021, OPTO.

Sub-terahertz detection by fin-shaped GaN/AlGaN transistors

P. Prystawko, G. Cywinski, W. Knap, 2020, OPTO.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

G. Simin, W. Knap, S. Rumyantsev, 2018 .

Terahertz response of field-effect transistors in saturation regime

M. S. Shur, T. A. Elkhatib, V. Yu. Kachorovskii, 2010, 1004.3740.

Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

Michael S. Shur, Wojciech Knap, M. Shur, 2002 .

Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation

P. Prystawko, G. Cywinski, W. Knap, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors

W. Knap, S. Rumyantsev, P. Prystawko, 2018, International Conference on Infrared, Millimeter, and Terahertz Waves.

Low-frequency 1 / f noise in MoS 2 transistors : Relative contributions of the channel and contacts

Michael S. Shur, Alexander A. Balandin, Sergey L. Rumyantsev, 2014 .

Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS2 Thin-Film Devices.

Michael Bloodgood, R. Lake, A. Balandin, 2019, ACS nano.

Excess noise in high-current diamond diodes

S. Goodnick, A. Balandin, R. Nemanich, 2021, Applied Physics Letters.

Unique features of the generation-recombination noise in quasi-one-dimensional van der Waals nanoribbons.

A. Balandin, S. Rumyantsev, A. Geremew, 2018, Nanoscale.

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

I. Kašalynas, W. Knap, S. Rumyantsev, 2020, Micromachines.

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS3—Signatures of Phase Transitions

A. Balandin, S. Rumyantsev, Subhajit Ghosh, 2021, Advanced Electronic Materials.

Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials.

Guanxiong Liu, A. Balandin, S. Rumyantsev, 2018, Nano letters.

Selective Sensing of Individual Gases Using Graphene Devices

Michael S. Shur, Radislav A. Potyrailo, Guanxiong Liu, 2013, IEEE Sensors Journal.

Attenuation of Surface Acoustic Waves by Carbon Nanotubes

P. Ajayan, M. Shur, B. Wei, 2002 .

Structural and transport properties of CdS films deposited on flexible substrates

P. Ajayan, M. Shur, B. Wei, 2002 .

Low-frequency noise in GaN/GaAlN heterojunctions

M. Shur, M. Levinshtein, W. Knap, 1998 .

ERRATA: "THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES"

S. J. Allen, M. Shur, P. Burke, 2002 .

Nature of the 1/f noise in graphene-direct evidence for the mobility fluctuation mechanism.

J. A. Delgado Notario, M. Levinshtein, A. Balandin, 2021, Nanoscale.

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

Alexander A. Balandin, Guanxiong Liu, Sergey L. Rumyantsev, 2015, 1506.04083.

High-Vacuum Particulate-Free Deposition of Wafer-Scale Mono-, Bi-, and Trilayer Molybdenum Disulfide with Superior Transport Properties.

A. Balandin, S. Rumyantsev, K. Yamaguchi, 2018, ACS applied materials & interfaces.

Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands

A. Balandin, S. Rumyantsev, Subhajit Ghosh, 2021, Advanced materials.

Efficient terahertz radiation absorption by dilute graphene composites

A. Balandin, S. Rumyantsev, F. Kargar, 2022, Applied Physics Letters.

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors

M. Shur, N. Pala, M. Levinshtein, 2001 .

High-frequency current oscillations in charge-density-wave 1T-TaS2 devices: Revisiting the “narrow band noise” concept

R. Lake, A. Balandin, S. Rumyantsev, 2020, Applied Physics Letters.

Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices

R. Lake, A. Balandin, S. Rumyantsev, 2021 .

Ternary and quaternary III-V compounds

Michael S. Shur, Sergey L. Rumyantsev, M. Shur, 1999 .

Current and optical low-frequency noise of GaInN/GaN green light emitting diodes

Michael S. Shur, Christian Wetzel, Sergey L. Rumyantsev, 2007, SPIE International Symposium on Fluctuations and Noise.

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

Michael S. Shur, Sergey L. Rumyantsev, Christian Wetzel, 2006 .

Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

A. Balandin, S. Rumyantsev, J. Smulko, 2023, Applied Physics Letters.

Low frequency noise of light emitting diodes (Invited Paper)

Michael S. Shur, A. Lunev, Sergey L. Rumyantsev, 2005, SPIE International Symposium on Fluctuations and Noise.

Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

W. Knap, J. Łusakowski, S. Rumyantsev, 2021, Physical Review B.

Amplitude and Phase Noise of Magnons.

A. Balandin, A. Khitun, S. Rumyantsev, 2019, 1909.00085.

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

Michael S. Shur, Michael E. Levinshtein, Sergey L. Rumyantsev, 1998 .

Efficient Absorption of Terahertz Radiation in Graphene Polymer Composites

A. Balandin, S. Rumyantsev, F. Kargar, 2021, 2109.01082.

Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes

Michael E. Levinshtein, John W. Palmour, A. A. Lebedev, 2018 .

On the Hooge relation in semiconductors and metals

M. Levinshtein, S. Rumyantsev, A. Dmitriev, 2009 .

Degradation of AlGaN-based ultraviolet light emitting diodes

Michael S. Shur, Sergey L. Rumyantsev, Shayla Sawyer, 2008 .

Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb

Michael S. Shur, Sergey L. Rumyantsev, M. Shur, 1996 .

Selective Gas Sensing With $h$ -BN Capped MoS2 Heterostructure Thin-Film Transistors

M. Shur, A. Balandin, S. Rumyantsev, 2015, IEEE Electron Device Letters.

Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors

M. S. Shur, S. L. Rumyantsev, J. Renteria, 2013, 1312.6868.

Reduction of the Low Frequency Noise and Negative Photoconductivity in HgTe Quantum Wells

W. Knap, S. Rumyantsev, D. But, 2019 .

Low-frequency current fluctuations in "graphene-like" exfoliated thin-films of bismuth selenide topological insulators.

M. Shur, D. Teweldebrhan, A. Balandin, 2011, ACS nano.

Noise spectroscopy of local surface levels in semiconductors

J. Palmour, M. Levinshtein, S. Rumyantsev, 2000 .

AlGaN/GaN HEMTs for THz Plasma Wave Detection and Emission

I. Kašalynas, W. Knap, S. Rumyantsev, 2020, International Conference on Infrared, Millimeter, and Terahertz Waves.

1/f noise in conducting channels of topological insulator materials

M. Shur, D. Teweldebrhan, A. Balandin, 2011 .

Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold

M. Shur, N. Pala, M. Levinshtein, 2006 .

Low-Frequency Noise in Low-Dimensional van der Waals Materials

A. Balandin, S. Rumyantsev, 2019, 1908.06204.

LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES

M. Shur, Guanxiong Liu, A. Balandin, 2011 .

Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

M. Shur, A. Balandin, S. Rumyantsev, 2015, 1503.01823.

GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

M. Shur, N. Pala, M. Levinshtein, 2004 .

On the low frequency noise mechanisms in GaN/AlGaN HFETs

M. Levinshtein, G. Simin, M. Khan, 2003 .

Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors

M. Shur, N. Pala, X. Hu, 2002 .

LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

M. Shur, N. Pala, M. Levinshtein, 2001, The Random and Fluctuating World.

Drift mobility of electrons in AlGaN/GaN MOSHFET

M. Shur, M. Levinshtein, G. Simin, 2001 .

Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes

J. Palmour, S. Rumyantsev, A. Lebedev, 2017 .

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

M. Shur, S. Dhar, A. Agarwal, 2012 .

Si-like low-frequency noise characteristics of 4H-SiC MOSFETs

M. Shur, S. Dhar, A. Agarwal, 2011 .

Understanding noise measurements in MOSFETs: the role of traps structural relaxation

M. Shur, G. Bersuker, R. Jammy, 2010, 2010 IEEE International Reliability Physics Symposium.

Noise spectroscopy of local levels in semiconductors

M. Levinshtein, S. Rumyantsev, 1994 .

Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

J. Palmour, M. Levinshtein, S. Rumyantsev, 2018, Materials Science Forum.

Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

J. Palmour, S. Rumyantsev, A. Lebedev, 2017 .

SiC materials and devices

M. Shur, M. Levinshtein, S. Rumyantsev, 2006 .

Low Frequency Noise in n-GaN with High Electron Mobility

M. Shur, D. Look, M. Levinshtein, 1999 .

SiC materials and devices

Michael S. Shur, Sergey L. Rumyantsev, M. Shur, 2006 .

Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates

Michael S. Shur, Michael E. Levinshtein, S. L. Rumyantsev, 2000 .

Current and optical noise of GaN/AlGaN light emitting diodes

Michael S. Shur, A. Lunev, Sergey L. Rumyantsev, 2006 .

Low Frequency Noise in Gallium Nitride Field Effect Transistors

M. Shur, M. Levinshtein, G. Simin, 2002 .

Effect of ultraviolet light on 1/f noise in carbon nanotube networks

W. Knap, S. Rumyantsev, D. Lioubtchenko, 2021 .

Nanometer Scale Complementary Silicon MOSFETs as Detectors of Terahertz and Sub-terahertz Radiation

N. Pala, D. Veksler, F. Guarin, 2007, 2007 IEEE Sensors.

Anomalous sub-THz detection by GaN/AlGaN FinFETs

I. Kašalynas, W. Knap, S. Rumyantsev, 2020, 2020 23rd International Microwave and Radar Conference (MIKON).

Post-Harvest Produce Preservation using Deep UV LED Technology

S. Rumyantsev, I. Gaska, M. Shur, 2016 .

Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators

M. Shur, D. Teweldebrhan, A. Balandin, 2011 .

Low frequency noise in 4H-SiC BJTs

Anant K. Agarwal, Michael E. Levinshtein, John W. Palmour, 2004, SPIE International Symposium on Fluctuations and Noise.

Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2000 .

Carrier lifetime "paradoxes" in high-voltage 4H-SiC diodes

J. Palmour, M. Levinshtein, R. Singh, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Low-frequency noise in GaN nanowire transistors

Michael S. Shur, Albert V. Davydov, Abhishek Motayed, 2008 .

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2013 .

Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

Pavel Ivanov, Anant K. Agarwal, Sei-Hyung Ryu, 2002 .

1/ $f$ Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

M. Shur, A. Balandin, S. Rumyantsev, 2015, IEEE Electron Device Letters.

GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

W. Knap, S. Rumyantsev, C. Skierbiszewski, 2016, 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2013 .

Low frequency noise in degenerate semiconductors

M. Shur, M. Levinshtein, S. Rumyantsev, 2001 .

Low frequency noise in 4H silicon carbide

J. Palmour, M. Levinshtein, S. Rumyantsev, 1997 .

LOW-FREQUENCY NOISE IN 4H-SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

J. Palmour, M. Levinshtein, G. Simin, 1996 .

Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

M. Shur, A. Balandin, S. Rumyantsev, 2013, 1312.6868.

Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors

M. Shur, K. Fobelets, S. Rumyantsev, 2008 .

Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

Michael S. Shur, Grigory Simin, Sergey L. Rumyantsev, 2003 .

Low-Frequency Electronic Noise in the Back-Gated and Top-Gated Graphene Devices

M. Shur, Guanxiong Liu, A. Balandin, 2010 .

Generation-recombination noise in GaN and GaN-based devices

Michael S. Shur, Remis Gaska, Michael E. Levinshtein, 2003, SPIE International Symposium on Fluctuations and Noise.

Low frequency noise in GaN-based transistors

M. Shur, N. Pala, M. Levinshtein, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Noise Sources in GaN/AlGaN Quantum Wells and Devices

S. Rumyantsev, 2004 .

Generation-recombination noise in forward-biased 4H-SiC p-n diode

Michael S. Shur, Dmitry Veksler, Michael E. Levinshtein, 2007, SPIE International Symposium on Fluctuations and Noise.

Noise and Interface Density of Traps in 4 H‐SiC MOSFETs

M. Shur, A. Agarwal, S. Ryu, 2009 .

Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases

S. Rumyantsev, L. Österlund, J. Smulko, 2023, Applied Physics Letters.

Graphene thickness-graded transistors with reduced electronic noise

M. Shur, Guanxiong Liu, A. Balandin, 2011, 1112.5751.

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Michael S. Shur, Wojciech Knap, Michael E. Levinshtein, 2002 .

Selective gas sensing by graphene

M. Shur, A. Balandin, S. Rumyantsev, 2012, 2012 IEEE Sensors.

CdS based novel photo-impedance light sensor

M. Shur, S. Rumyantsev, T. Saxena, 2014 .

Transient response of highly doped thin channel GaN metal semiconductor and metal-oxide semiconductor field effect transistors

M. Shur, N. Pala, G. Simin, 2002 .

Low-Frequency Noise of Magnons

A. Balandin, A. Khitun, S. Rumyantsev, 2019 .

Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS2 Thin-Film Devices.

Michael Bloodgood, R. Lake, A. Balandin, 2019, ACS nano.