J. I. Lee

发表

Simple parameter extraction method for non-ideal Schottky barrier diodes

Jean Brini, Charalabos A. Dimitriadis, J. Brini, 1998 .

High power broadband superluminescent diodes with chirped multiple quantum dots

I. Han, J. I. Lee, Jouhahn Lee, 2007 .

Optical characterization of GaAs/AlAs short period superlattices

Young Dong Kim, S. H. Kim, I. Han, 1998 .

Effect of rapid thermal annealing on the noise properties of InAs∕GaAs quantum dot structures

Costas A. Charitidis, A. Tsormpatzoglou, Charalabos A. Dimitriadis, 2007 .

Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

Nam Ki Cho, Heonsu Jeon, Jin Dong Song, 2006 .

Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation

Won Jun Choi, Nam Ki Cho, Jin Dong Song, 2009 .

Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy

Il Ki Han, Won Jun Choi, Jin Dong Song, 2004 .

Carrier lifetimes in dielectric cap disordered GaAs/AlGaAs multiple quantum well with SiN capping layers

Won Jun Choi, Kyeongjae Cho, K. N. Kang, 1995 .

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

J. S. Kim, C. M. Lee, I. Han, 2005 .

Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer

J. Leem, J. I. Lee, S. Noh, 2001 .

Near-field scanning optical microscopy of quantum dot broad area laser diodes

J. S. Kim, I. Han, J. Leem, 2007 .

The frequency dependence of the diagonal conductivity of a 2DEG in GaAs heterostructure in the quantum Hall regime

B. Goldberg, J. I. Lee, M. Heiblum, 1987 .

Effects of Growth Conditions on Properties of ZnO Nanostructures Grown by Hydrothermal Method

J. Leem, J. I. Lee, Jinsoo Kim, 2010 .

Electric subbands in a both-side-modulation-doped In0.52Al0.48As/In0.65Ga0.35As single quantum well

K. Kang, J. I. Lee, T. W. Kim, 1992 .

Investigation of noise sources in platinum silicide Schottky barrier diodes

G. Kamarinos, J. I. Lee, C. Dimitriadis, 2002 .

Characteristics of Si-doped GaN compensated with Mg

Cheul‐Ro Lee, J. Leem, J. I. Lee, 1998 .

Constant capacitance technique to study electrical instabilities in InP MIS provided by PECVD silicon nitride

I. Han, K. Kang, Hye Jin Lim, 1993 .

Study of charge trapping instabilities in a silicon‐nitride/indium‐phosphide metal‐insulator‐semiconductor structure by the constant‐capacitance method

I. Han, K. Kang, Hye Jin Lim, 1992 .

Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition

H. L. Park, I. Han, K. Kang, 1994 .

Electric subbands in a strained InAs0.6P0.4/InP single quantum well

J. I. Lee, S. Noh, Taewhan Kim, 1992 .

Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer

I. Han, J. Leem, J. I. Lee, 2005 .

Effects of Precursor Concentration on Surface and Optical Properties of ZnO Nano-Fibrous Thin Films Fabricated by Spin-Coating Method

J. Leem, J. I. Lee, J. S. Kim, 2010 .

Growth of CdTe epitaxial films on p‐InSb(111) by temperature gradient vapor transport deposition

Tae Whan Kim, K. Kang, Hye Jin Lim, 1992 .

Non-homogeneous electrical transport through silicon-on-sapphire thin films: Evidence of the internal stress influence

S. Cristoloveanu, A. Chovet, J. I. Lee, 1982 .

DYNAMICS OF ANTI-STOKES PHOTOLUMINESCENCE IN TYPE-II ALXGA1-XAS-GAINP2 HETEROSTRUCTURES : THE IMPORTANT ROLE OF LONG-LIVED CARRIERS NEAR THE INTERFACE

Hye Jin Lim, J. I. Lee, Yong‐Hoon Cho, 1997 .

Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

A. Chovet, Songcheol Hong, J. I. Lee, 2006 .

Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering

G. Kamarinos, J. Brini, J. I. Lee, 1999 .

Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots

J. S. Kim, I. Han, J. Leem, 2006 .

Electron scattering profiles in SOS films measured by temperature-dependent Hall effect

J. I. Lee, 1981 .

Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD

C. Lee, J. I. Lee, A. K. Viswanath, 1998 .

Luminescence and ultrafast phenomena in InGaN multiple quantum wells

J. I. Lee, G. Yang, H. J. Lee, 2007 .

Blue luminescence from the InGaN multiple quantum wells

J. I. Lee, G. Yang, H. J. Lee, 2005 .

Growth of good quality InGaN multiple quantum wells by MOCVD

J. I. Lee, A. K. Viswanath, S. Kim, 2004 .

Size distribution effects on self-assembled InAs quantum dots

J. S. Kim, I. Han, J. Leem, 2007 .

Magnetotransport measurements on an In0.52Al0.48As/In0.65Ga0.35As single quantum well

K. Kang, J. I. Lee, T. W. Kim, 1993, Journal of Materials Science Letters.

Clear Observation of the Two‐Dimensional Electron Gas in an Inx Ga1−x As/In0.52 Al0.48 As Quantum Well

K. Kang, J. I. Lee, H. Park, 1992 .

Quantum dot-like effect in InGaAs/GaAs quantum well

J. I. Lee, W. Choi, M. Abdellatif, 2011 .

Dielectric cap disordering of GaAs/AIGaAs multiple quantum well by using plasma enhanced chemical vapour deposited SiN capping layer

H. L. Park, S. Kim, K. Kang, 1995 .

Characterisation of n-channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidation

J. I. Lee, O. Gregory, P. Stiles, 1987 .

Anomalous magnetoresistance peaks in quantum Hall plateau regions

K. Chang, J. Oh, J. I. Lee, 1995 .

Current–voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

J. I. Lee, C. Dimitriadis, W. Choi, 2007 .

Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures

J. I. Lee, Yong‐Hoon Cho, B. Choe, 1998 .

Interface properties and capacitance‐voltage behavior of indium phosphide metal‐insulator‐semiconductor prepared by plasma‐assisted oxidation

K. Kang, Hwanjoo Park, J. I. Lee, 1991 .

Enhanced disordering of GaAs/AIGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition

Won Jun Choi, Kyuman Cho, K. N. Kang, 1994 .

Flicker noise by random walk of electrons at the interface in nonideal Schottky diodes

Jean Brini, A. Chovet, Charalabos A. Dimitriadis, 1999 .

Properties of Mg doped GaAs grown by molecular beam epitaxy

J. Leem, J. I. Lee, S. Noh, 2001 .

Growth of high quality Mg-doped GaAs by molecular beam epitaxy and its properties

J. Leem, J. I. Lee, S. Noh, 2001 .

Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses

J. S. Kim, I. Han, J. Leem, 2005 .

MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

Il Ki Han, Qin Wang, J. D. Song, 2012, OPTO.

Growth and characterization of low density droplet GaAs quantum dots for single photon sources

Il Ki Han, Won Jun Choi, S.‐K. Ha, 2011, OPTO.

1/fγ noise in polycrystalline silicon thin-film transistors

Jean Brini, Charalabos A. Dimitriadis, Georges Kamarinos, 1999 .

Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP

I. Han, K. Kang, Hye Jin Lim, 1994 .

Capacitively-coupled measurements on the frequency dependent diagonal magnetoconductance of a 2DEG in GaAs heterostructure in the quantum Hall regime

J. I. Lee, M. Heiblum, P. Stiles, 1992 .