Y. Yoon

发表

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Sung Yoon Kim, J. Seo, Y. Yoon, 2015 .

Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

J. Seo, Y. Yoon, I. Kang, 2018 .

Capacitorless one-transistor dynamic random access memory based on double-gate GaAs junctionless transistor

J. Seo, Y. Yoon, I. Kang, 2017 .

Effect of spacer dielectrics on performance characteristics of Ge-based tunneling field-effect transistors

J. Seo, Y. Yoon, Seongjae Cho, 2014 .

A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

Jong-Ho Lee, J. Seo, Y. Yoon, 2019, Applied Physics Letters.

Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate

Y. Yoon, I. Kang, Dong‐Seok Kim, 2021 .

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure

Y. Yoon, I. Kang, Dong‐Seok Kim, 2020, Electronics.

Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell

Y. Yoon, Jung-Hee Lee, I. Kang, 2021, International Journal of Energy Research.

Design and optimization of GaN‐based betavoltaic cell for enhanced output power density

Y. Yoon, Jung-Hee Lee, I. Kang, 2020, International Journal of Energy Research.

Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

Y. Yoon, Jung-Hee Lee, I. Kang, 2020 .

Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel

Daehyun Kim, S. Cristoloveanu, Y. Yoon, 2019, IEEE Transactions on Electron Devices.

Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator

J. Seo, Y. Yoon, I. Kang, 2022, Materials.

Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor

Hye Rim Eun, H. Kwon, J. Seo, 2015 .

Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances

Y. Yoon, I. Kang, J. Bae, 2020 .

TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

J. Seo, Y. Yoon, Jung-Hee Lee, 2016 .

Impact of Multi-Layer Carbon-Doped/Undoped GaN Buffer on Suppression of Current Collapse in AlGaN / GaN HFETs

S. Cristoloveanu, Y. Yoon, Jung-Hee Lee, 2014 .

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Y. Yoon, I. Kang, Jung Hee Lee, 2020, Micromachines.

Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

J. Seo, Y. Yoon, I. Kang, 2022, Nanomaterials.

Anomalous DC Characteristics of AlGaN/GaN HEMTs Depending on Proton Irradiation Energies

Jun-Hyeok Lee, Y. Yoon, Jung-Hee Lee, 2020 .

A Novel Analysis of ${L}_{\text{gd}}$ Dependent-1/${f}$ Noise in In0.08Al0.92N/GaN

Jong-Ho Lee, J. Seo, Y. Yoon, 2018, IEEE Electron Device Letters.

A Novel Analysis of

${L}_{\text{gd}}$

Dependent-1/

${f}$

Noise in In_0.08Al_0.92N/GaN

Jong-Ho Lee, J. Seo, Y. Yoon, 2018, IEEE Electron Device Letters.

Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐ doped GaN/undoped GaN multi‐layered buffer structure

Y. Yoon, Jung-Hee Lee, I. Kang, 2015 .

Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor

J. Seo, Y. Yoon, Seongjae Cho, 2014 .

Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates

J. Seo, Y. Yoon, I. Kang, 2022, Journal of Electrical Engineering & Technology.

Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced $I$ – $V$ Characteristic for Switching Applications

In Man Kang, Dong-Hyeok Son, Jae Hwa Seo, 2016, IEEE Electron Device Letters.

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

J. Seo, Y. Yoon, In Man Kang, 2018 .

Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation

In Man Kang, Jae Hwa Seo, Byung-Gook Park, 2013 .

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

In Man Kang, Jae Hwa Seo, Jung-Hee Lee, 2014 .

High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5 V operation

Gwan Min Yoo, J. Seo, Y. Yoon, 2015 .

Investigation of InAs/InGaAs/InP Heterojunction Tunneling Field-Effect Transistors

Hye Rim Eun, J. Seo, Y. Yoon, 2014 .

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

In Man Kang, Jae Hwa Seo, Seongjae Cho, 2014, IEICE Trans. Electron..

Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect

Jong-Ho Lee, Wookyung Sun, Hyungsoon Shin, 2019, IEEE Electron Device Letters.

Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs

Y. Yoon, I. Kang, Dong‐Seok Kim, 2021, Results in Physics.

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

Y. Yoon, I. Kang, Jaekwon Suk, 2021, Micromachines.

The Simulation and Analysis of Recess-Gated GaN/AlGaN MOSFET RF Characteristics for Green-Energy Automobile Applications

Gwan Min Yoo, Hye Su Kang, Hye Rim Eun, 2014, 2014 Sixth International Conference on Measuring Technology and Mechatronics Automation.

Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect

J. Seo, Y. Yoon, I. Kang, 2022, Japanese Journal of Applied Physics.

Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications

J. Seo, Y. Yoon, Seongjae Cho, 2014 .

Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET)

In Man Kang, Jae Hwa Seo, Seongjae Cho, 2015 .

Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer

Hye Rim Eun, H. Kwon, J. Seo, 2016 .