L. McCray

GaN/AlGaN high electron mobility transistors with f τ of 110 GHz

P. Janke, N. X. Nguyen, Chanh Nguyen, 2000 .

K-band GaN power HFET's with 6.6 W/mm CW saturated output power density and 35% power added efficiency at 20 GHz

P. Janke, T. Hussain, A. Kurdoghlian, 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).

High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

P. Janke, N. X. Nguyen, Chanh Nguyen, 2000 .

GaN HFET technology for RF applications

J. Moon, M. Micovic, P. Janke, 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

P. Janke, A. Kurdoghlian, W.-S. Wong, 2002, IEEE Electron Device Letters.

GaN/AlGaN HEMTs operating at 20 GHz with continuous-wave power density >6 W/mm

P. Janke, Jeong-Sun Moon, Chanh Nguyen, 2001 .