A. Koudymov

发表

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

G. Simin, A. Koudymov, M.A. Khan, 2003, IEEE Electron Device Letters.

Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

G. Simin, M. Khan, V. Adivarahan, 2004, IEEE Microwave and Wireless Components Letters.

AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2001 .

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

G. Simin, M. Khan, V. Adivarahan, 2003 .

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2000 .

High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

G. Simin, V. Adivarahan, J. Yang, 2005, IEEE Electron Device Letters.

Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel

Michael S. Shur, O. V. Polischuk, Vyacheslav V. Popov, 2008 .

Modelling of Thin Film Transistors for Circuit Simulation

A. Cerdeira, R. Picos, M. Estrada, 2007, 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems.

SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs

M. Shur, G. Simin, R. Gaska, 2002, IEEE Electron Device Letters.

Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors

M. Shur, G. Simin, M. Khan, 2001 .

2003 Index IEEE Electron Device Letters Vol. 24

G. Simin, Junliang Yang, R. Gaska, 2003 .

High-power operation of III-N MOSHFET RF switches

G. Simin, V. Adivarahan, J. Yang, 2005, IEEE Microwave and Wireless Components Letters.

Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors

G. Simin, V. Adivarahan, A. Chitnis, 2002 .

Maximum current in nitride-based heterostructure field-effect transistors

M. Shur, G. Simin, M. Khan, 2002 .

Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

G. Simin, M. Khan, V. Adivarahan, 2006 .

Stable 20 W/mm AlGaN-GaN MOSHFET

G. Simin, M. Khan, V. Adivarahan, 2005 .

Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2003 .

$\hbox{HfO}_{2}$–III-Nitride RF Switch With Capacitively Coupled Contacts

M. Shur, N. Pala, V. Tokranov, 2009, IEEE Electron Device Letters.

Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm

G. Simin, V. Adivarahan, A. Chitnis, 2002 .

DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress

M. Shur, G. Simin, M. Khan, 2002 .

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

A. Tarakji, G. Simin, A. Koudymov, 2003, IEEE Electron Device Letters.

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

M. Shur, G. Simin, R. Gaska, 2003 .

Cryogenic RF switch using III-nitride MOSHFETs

M. Shur, G. Simin, J. Yang, 2009 .

Universal compact model for long- and short-channel Thin-Film Transistors

Michael S. Shur, Trond Ytterdal, Rodrigo Picos, 2008 .

Analysis of Charge-Pumping Data for Identification of Dielectric Defects

Gennadi Bersuker, Alexey Koudymov, Dmitry Veksler, 2013, IEEE Transactions on Electron Devices.

GaN/AlGaN p-channel inverted heterostructure JFET

G. Simin, A. Koudymov, M. Asif Khan, 2002, IEEE Electron Device Letters.

RF Transmission Line Method for Wide-Bandgap Heterostructures

M. Shur, N. Pala, V. Tokranov, 2009, IEEE Electron Device Letters.

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

G. Simin, A. Koudymov, M.A. Khan, 2005, IEEE Electron Device Letters.

Current collapse and reliability of III‐N heterostructure field effect transistors

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2007 .

Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-based HEMTs

R. Gaska, G. Simin, N. Pala, 2007, 2007 65th Annual Device Research Conference.

Comprehensive analysis of charge pumping data for trap identification

G. Bersuker, D. Veksler, C. Young, 2011, 2011 International Reliability Physics Symposium.

The 1.6-kV AlGaN/GaN HFETs

G. Simin, M.A. Khan, J. Yang, 2006, IEEE Electron Device Letters.

7.5 kW/mm 2 Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

M. Shur, G. Simin, M. Khan, 2000 .