K. Nakata

Vertical heterojunction field‐effect transistors utilizing re‐grown AlGaN/GaN two‐dimensional electron gas channels on GaN substrates

S. Yaegassi, M. Okada, Yuusaku Saitou, 2011 .

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

H. Fukidome, M. Suemitsu, S. Yaegassi, 2018, Scientific Reports.

Low Capacitance Gate Process for E-Band GaN HEMTs

K. Nakata, H. Ichikawa, T. Kouchi, 2015 .

Super low-distortion and high power hetero GaAs MESFETs with asymmetrical LDD structure

S. Nakajima, K. Nakata, K. Otobe, 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

H. Fukidome, M. Suemitsu, S. Yaegassi, 2018, Scientific Reports.

Innovative RF Device Technologies for Advanced Information and Communications Network Society

K. Nakata, Y. Miyamoto, K. Makiyama, 2022, BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium.

Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network

K. Nakata, K. Makiyama, A. Hayasaka, 2022, 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

Tsukuru Katsuyama, Koji Katayama, Ken Nakata, 2010 .

Effects of a GaN cap layer on admittance characteristics of AlGaN/GaN MIS structures

T. Hashizume, K. Nakata, K. Nishiguchi, 2023, Journal of Applied Physics.

Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs

Takeshi Kawasaki, Takeshi Igarashi, Keita Matsuda, 2008, IEICE Trans. Electron..