Q. Jiang

发表

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Shu Yang, Sen Huang, Qimeng Jiang, 2012, IEEE Electron Device Letters.

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Shu Yang, Sen Huang, Qimeng Jiang, 2013, IEEE Electron Device Letters.

High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation

Kevin J. Chen, Sen Huang, Q. Jiang, 2014, IEEE Electron Device Letters.

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

Cheng Liu, Sen Huang, Qimeng Jiang, 2013, IEEE Electron Device Letters.

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Kevin J. Chen, Q. Jiang, Shu Yang, 2014, IEEE Electron Device Letters.

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters

Kevin J. Chen, Alex Man Ho Kwan, Qimeng Jiang, 2015, IEEE Transactions on Electron Devices.

High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs

Y. Hao, X. Liu, Y. Zheng, 2014, 2014 IEEE International Electron Devices Meeting.

Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess

Xinyu Liu, Sen Huang, Q. Jiang, 2021, Journal of Semiconductors.

Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier

Xinyu Liu, Sen Huang, Q. Jiang, 2022 .

Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies

Kevin J. Chen, Sen Huang, Q. Jiang, 2013, 2013 IEEE International Electron Devices Meeting.

A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

Kevin J. Chen, Q. Jiang, Zhikai Tang, 2014, IEEE Transactions on Electron Devices.

600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Shu Yang, Xi Tang, Kevin J. Chen, 2013, IEEE Electron Device Letters.

Ultrathin-barrier AlGaN/GaN heterostructure: An AlGaN-recess-free technology for fabrication of lateral GaN-based power devices

Xinyu Liu, Sen Huang, Q. Jiang, 2022, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

Kevin J. Chen, Sen Huang, Q. Jiang, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

Kevin J. Chen, Q. Jiang, Shu Yang, 2015, IEEE Electron Device Letters.

Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier” [Apr 15 318-320]

Kevin J. Chen, Q. Jiang, Shu Yang, 2015 .

High-voltage enhancement/Depletion-mode AlGaN/GaN HEMTs on modified SOI substrates

Kevin J. Chen, Q. Jiang, C. Liu, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

GaN‐to‐Si vertical conduction mechanisms in AlGaN/GaN‐on‐Si lateral heterojunction FET structures

Kevin J. Chen, Q. Jiang, Shu Yang, 2014 .

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Xinyu Liu, Sen Huang, Q. Jiang, 2021, Applied Physics Letters.

Investigation of Dynamic-QGD on Enhancement-Mode AlGaN/GaN MIS-HEMTs with SiNx Passivation Dielectric

Xinyu Liu, Sen Huang, Q. Jiang, 2022, International Symposium on Power Semiconductor Devices and IC's.

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Xinyu Liu, Sen Huang, Q. Jiang, 2022, Journal of Semiconductors.

Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

Shu Yang, Xi Tang, Kevin J. Chen, 2015, IEEE Transactions on Electron Devices.

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Shu Yang, Cheng Liu, Kevin J. Chen, 2015 .

A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

Xingbi Chen, Qimeng Jiang, Xingbi Chen, 2010, IEEE Transactions on Electron Devices.

Powering 5G Era Computing Platforms – the Road toward Integrated Power Delivery

Yuliang Lu, Wei Song, Qiang Xie, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiNx Passivation

Xinyu Liu, Sen Huang, Q. Jiang, 2022, IEEE Transactions on Electron Devices.

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Xinyu Liu, Sen Huang, Q. Jiang, 2023, Applied Surface Science.

Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs

Shu Yang, Cheng Liu, Kevin J. Chen, 2015 .

600V 1.3mμ·cm2 low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation

Sen Huang, Q. Jiang, Zhikai Tang, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal-Insulator-Semiconductor Electronic Devices.

Xinyu Liu, Sen Huang, Q. Jiang, 2023, ACS applied materials & interfaces.

700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN MIS-HEMTs with Improved Gate Overdrive Window and PBTI

Xinyu Liu, Sen Huang, Q. Jiang, 2023, 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

Jin Wei, Huaping Jiang, Kevin J. Chen, 2016, IEEE Transactions on Electron Devices.

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Sen Huang, Qimeng Jiang, Chunhua Zhou, 2012, IEEE Electron Device Letters.

Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures

Sen Huang, Qimeng Jiang, Chunhua Zhou, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Gate-Bias-Accelerated VTH Recovery on Schottky-Type p-GaN Gate AlGaN/GaN HEMTs

Xinyu Liu, Sen Huang, Q. Jiang, 2023, IEEE Transactions on Electron Devices.

Characterization of Electrical Switching Safe Operation Area on Schottky-Type P-GaN Gate HEMTs

Xinyu Liu, Q. Jiang, Xinhua Wang, 2023, IEEE transactions on power electronics.

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Xinyu Liu, Sen Huang, Q. Jiang, 2022, IEEE Electron Device Letters.

Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET

Q. Jiang, Zhikai Tang, Yunyou Lu, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

Q. Jiang, Xinhua Wang, K. Wei, 2024, IEEE Electron Device Letters.

Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition

Q. Jiang, Shu Yang, Zhikai Tang, 2015 .

Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Shu Yang, Cheng Liu, Kevin J. Chen, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).