T. Jang

发表

Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

J. Kwak, S. Oh, Chi Gyun Song, 2013 .

Improved package reliability of AlGaN/GaN HFETs on 150 mm Si substrates by SiNx/polyimide dual passivation layers

J. Kwak, S. Oh, T. Jang, 2016 .

Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs

J. Kwak, S. Oh, T. Jang, 2016, IEEE Transactions on Electron Devices.

Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

J. Kwak, S. Oh, T. Jang, 2016 .

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

Joon Seop Kwak, Jie Chen, Dong Gyu Lee, 2017 .

Realization of high-power dimmable GaN-based LEDs by hybrid integration with AlGaN/GaN HFETs

J. Kwak, Jaehee Cho, T. Jang, 2019, Japanese Journal of Applied Physics.

Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode

T. Jang, S. Jang, J. Shin, 2013 .

Gate Metal Dependent Reverse Leakage Mechanisms in AlGaN/GaN Schottky Diode

T. Jang, S. Jang, J. Shin, 2013 .

Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ SixNy on AlGaN

T. Jang, Y. Jo, Hwa-Young Ko, 2013 .

Comparison of multi-level metallization structure and conventional metallization structure in lateral-type AlGaN/GaN HFETs

J. Kwak, T. Jang, J. Ryou, 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electroreflectance spectroscopy

T. Jang, Y. Jo, J. Shin, 2012 .

Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition

T. Jang, O. Nam, Byeongchan So, 2019, Thin Solid Films.

Current relaxation analysis in AlGaN/GaN high electron mobility transistors

N. B. Smirnov, F. Ren, S. Pearton, 2017 .

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

K. Seo, H. Cha, T. Jang, 2019, physica status solidi (a).

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

K. Seo, H. Cha, T. Jang, 2019, Japanese Journal of Applied Physics.

Development of chip shrink technology for lateral-type GaN based HFETs using SiO2/polyimide dual IMD layers

J. Kwak, S. Oh, T. Jang, 2015, Electronic Materials Letters.

Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates

Jong Hoon Shin, Young Jun Chang, Y. Chang, 2015 .

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

J. Kwak, T. Jang, Y. Jo, 2013, Journal of nanoscience and nanotechnology.