S. Yamanaka

发表

Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films

H. Okushi, K. Hayashi, S. Yamanaka, 1997 .

Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements

Koji Kajimura, Hideyo Okushi, H. Okushi, 1996 .

Spatial uniformity of Schottky contacts between aluminum and hydrogenated homoepitaxial diamond films

H. Okushi, S. Yamanaka, H. Watanabe, 2000 .

Homoepitaxial diamond films grown by step-flow mode in various misorientation angles of diamond substrates

H. Okushi, S. Yamanaka, K. Kajimura, 2000 .

Defects in Device Grade Homoepitaxial Diamond Thin Films Grown with Ultra‐Low CH4/H2 Conditions by Microwave‐Plasma Chemical Vapor Deposition

H. Okushi, S. Yamanaka, H. Watanabe, 1999 .

Stepped growth and etching of (001) diamond

Koji Kajimura, Hideyo Okushi, H. Okushi, 1996 .

n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition

Koji Kajimura, Masataka Hasegawa, Hideyo Okushi, 1999 .

High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron

H. Okushi, S. Yamanaka, H. Watanabe, 1998 .

Homoepitaxial diamond film with an atomically flat surface over a large area

H. Okushi, S. Yamanaka, H. Watanabe, 1999 .

Device-grade homoepitaxial diamond film growth

H. Okushi, S. Yamanaka, D. Takeuchi, 2002 .

Temperature Dependence of Photocurrent and Band Gap of Cl-Doped Semi-Insulating CdTe with Evaporated Au Electrodes

S. Yamanaka, Y. Tokumaru, Shugo Tsushima, 2002 .

Junction properties of homoepitaxial diamond films grown by step–flow mode

H. Okushi, K. Hayashi, S. Yamanaka, 1998 .

Diamond films epitaxially grown by step-flow mode

H. Okushi, K. Hayashi, S. Yamanaka, 1998 .

Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films

H. Okushi, K. Hayashi, S. Yamanaka, 1997 .

Atomic force microscopy study of atomically flat (001) diamond surfaces treated with hydrogen plasma

H. Okushi, K. Hayashi, S. Yamanaka, 1998 .

Origin of High-Conductivity Layer Near the Surface in As-Grown Diamond Films

H. Okushi, K. Hayashi, S. Yamanaka, 1996 .

Low-compensated boron-doped homoepitaxial diamond films

H. Okushi, S. Yamanaka, K. Kajimura, 2000 .

Misorientation angle dependence of surface morphology in homoepitaxial diamond film growth at a low CH4/H2 ratio

H. Okushi, S. Yamanaka, H. Watanabe, 2002 .

Device grade B-doped homoepitaxial diamond thin films

H. Okushi, S. Yamanaka, H. Watanabe, 2001 .

High Quality Homoepitaxial Diamond Films Grown in End-Launch Type Reactors

H. Okushi, K. Hayashi, S. Yamanaka, 1995 .

A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

H. Sawada, H. Okushi, S. Yamanaka, 1999 .

Cu/CaF2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process

H. Kawarada, H. Okushi, S. Yamanaka, 2000 .

Schottky junction properties of the high conductivity layer of diamond

H. Okushi, S. Yamanaka, D. Takeuchi, 2002 .

Hydrogen depth-profiling in chemical-vapor-deposited diamond films by high-resolution elastic recoil detection

H. Okushi, S. Yamanaka, K. Kimura, 2001 .

Electrical conduction of high-conductivity layers near the surfaces in hydrogenated homoepitaxial diamond films

H. Okushi, S. Yamanaka, H. Watanabe, 2000 .

Low‐Compensated Boron‐Doped Homoepitaxial Diamond Films Using Trimethylboron

H. Okushi, S. Yamanaka, K. Kajimura, 1999 .

High quality homoepitaxial diamond thin film synthesis with high growth rate by a two-step growth method

S. Yamanaka, H. Watanabe, K. Kajimura, 1999 .

DIRECT OBSERVATION OF HYDROGEN-RELATED LUMINESCENT STATES IN SUBSURFACE REGION OF HOMOEPITAXIAL DIAMOND FILMS

H. Okushi, K. Hayashi, S. Yamanaka, 1996 .

Strong excitonic recombination radiation from homoepitaxial diamond thin films at room temperature

Takashi Sekiguchi, Koji Kajimura, Hideyo Okushi, 1998 .

Structural properties of sulfur-implanted diamond single crystals

H. Okushi, S. Yamanaka, H. Watanabe, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).