H. Schreiber

发表

A Si bipolar phase and frequency detector IC for clock extraction up to 8 Gb/s

U. Langmann, H.-U. Schreiber, A. Pottbacker, 1992 .

Influence of the Base/Collector-Heterojunction on the Large and Small Signal Behaviour of Si/SiGe-HBTs and Consequences for Applications in High-Speed ICs

J. N. Albers, H.-U Schreiber, W. Geppert, 1993, ESSDERC '93: 23rd European solid State Device Research Conference.

Activation energies for the different electromigration mechanisms in aluminum

H.-U. Schreiber, H. Schreiber, 1981 .

Electromigration mechanisms in aluminum lines

H.-U. Schreiber, H. Schreiber, 1985 .

Electromigration threshold in aluminum films

H.-U. Schreiber, H. Schreiber, 1985 .

High Quality RF‐Sputtered Silicon Dioxide Layers

H. Schreiber, E. Froeschle, 1976 .

Electromigration measuring techniques for grain boundary diffusion activation energy in aluminum

H.-U. Schreiber, H. Schreiber, B. Grabe, 1981 .

Improved light-emitting performance of Si pn-diodes by exploiting edge effects

H. Schreiber, 2007 .

Room-Temperature Light Emission from Highly Efficient Silicon pn-Diodes

H. Schreiber, 2007 .

Slight Radiation Damage in Silicon for Si-Based Device Processing

H. Schreiber, A. Harnau, 1993 .

Si/SiGe heterojunction bipolar transistors with current gains up to 5000

B. G. Bosch, H. Schreiber, B. Bosch, 1989, International Technical Digest on Electron Devices Meeting.

Boron doping of SiGe base of heterobipolar transistors

H. Schreiber, E. Kasper, H. Kibbel, 1990 .

High-speed double mesa Si/SiGe heterojunction bipolar transistor fabricated by selfalignment technology

H. Schreiber, 1992 .