Kaoru Inoue

Takashi Hikihara, Kaoru Inoue, Toshimitsu Ushio, 2000, 2000 2nd International Conference. Control of Oscillations and Chaos. Proceedings (Cat. No.00TH8521).

RECENT PROGRESS ON GaN-BASED ELECTRON DEVICES

H. Ishida, Y. Hirose, T. Murata, 2006 .

S054055 Three Dimensional Numerical Simulation of Control of Flow Around Circular Cylinder with Plasma Actuators

K. Fukagata, Kaoru Inoue, H. Naito, 2011 .

Status of GaN-Based Power Switching Devices

Y. Uemoto, D. Ueda, Kaoru Inoue, 2008 .

GA Based Optimized Trajectories of Rotating Speed and d-q Axis Currents for an IPMSM

Kaoru Inoue, T. Kato, Shuta Kumagai, 2018, 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).

Methacarn fixation--effects of tissue processing and storage conditions on detection of mRNAs and proteins in paraffin-embedded tissues.

G. Woo, M. Hirose, Kaoru Inoue, 2006, Analytical biochemistry.

Growth and properties of N-AlGaAs/InGaAs selectively-doped single- and double-heterojunction fet structures

T. Matsuno, Kaoru Inoue, K. Nishii, 1989 .

Development of III-Nitride Based Electron Devices

Y. Ikeda, T. Matsuno, Kaoru Inoue, 2001 .

Enhanced Interdiffusion in the Al-Si System during Ar Ion Bombardment

Kaoru Inoue, T. Hirao, S. Takayanagi, 1979 .

Diagnosis of Stator‐Winding‐Turn Faults of Induction Motor by Direct Detection of Negative Sequence Currents

Toshiji Kato, Kaoru Inoue, Keisuke Yoshida, 2011 .

Fabrication of Novel Si Double-Barrier Structures and Their Characteristics

Y. Hirai, Kaoru Inoue, M. Niwa, 1995 .

The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO2–Si

Kaoru Inoue, T. Hirao, S. Takayanagi, 1979 .

Depth distribution of knock‐on nitrogen in Si by phosphorus implantation through Si3N4 films

Kaoru Inoue, T. Hirao, S. Takayanagi, 1977 .

A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)

H. Sakaki, Kaoru Inoue, 1984 .

Elastic Constants and X-Ray Stress Measurement of Cubic Thin Films with Fiber Texture

Y. Akiniwa, Keisuke Tanaka, Kaoru Inoue, 1999 .

CW Laser Annealing of Polycrystalline Silicon on SiO2 and Effects of Successive Furnace Annealing

Kaoru Inoue, K. Kugimiya, G. Fuse, 1982 .

Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique

Kaoru Inoue, Daisuke Ueda, Tetsuzo Ueda, 2007, IEICE Electron. Express.

Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction structures

H. Sakaki, Kaoru Inoue, J. Yoshino, 1985 .

MBE Growth and Properties of AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Structures with Very High Conductivity

H. Sakaki, Kaoru Inoue, J. Yoshino, 1984 .

Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro‐Raman spectroscopy and device simulation

A. Suzuki, T. Araki, Y. Nanishi, 2007 .

Optimal Digital Controller Design for Passive Stabilization of a Grid-Connected Three-Phase Inverter with LCL filter

Toshiji Kato, Kaoru Inoue, Yuki Yamamoto, 2019, 2019 IEEE Energy Conversion Congress and Exposition (ECCE).

Field‐dependent transport of electrons in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction systems

H. Sakaki, Kaoru Inoue, J. Yoshino, 1985 .

Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates

Kaoru Inoue, Toshinobu Matsuno, T. Matsuno, 1989 .

InGaAs/InAlAs(Si) modulation‐doped heterostructures intentionally lattice mismatched to InP substrates

T. Matsuno, Kaoru Inoue, J. Harmand, 1989 .

Control of Jump Phenomena in a Flexible Rotor System

Takashi Hikihara, Kaoru Inoue, Toshimitsu Ushio, 2000 .

Self‐consistent calculation of electronic states in AlGaAs/GaAs/AlGaAs selectively doped double‐heterojunction systems under electric fields

H. Sakaki, Kaoru Inoue, T. Hotta, 1985 .

WSiN/SiO2 capped annealing for Si‐implanted GaAs

Kaoru Inoue, Y. Ikeda, Kaoru Inoue, 1990 .

Energy-based digital control of a ripple correction circuit of an unity-power-factor AC/DC converter

Toshiji Kato, Kaoru Inoue, Koji Higashiyama, 2010, 2010 IEEE Energy Conversion Congress and Exposition.

SiFx and SFx molecular ion implantations into GaAs

Kaoru Inoue, A. Tamura, T. Onuma, 1987 .

Enhancement in activation efficiency for a SiF3‐implanted GaAs layer by a new annealing method

Kaoru Inoue, A. Tamura, T. Onuma, 1988 .

Synthesis of Multiple Equivalent One-Port Circuits by GP with Metric Measures

Toshiji Kato, Kaoru Inoue, Masayuki Kitagawa, 2008 .

Asymmetrical Profiles of Ion Implanted Phosphorus in Silicon

Kaoru Inoue, T. Hirao, S. Takayanagi, 1979 .

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Kaoru Inoue, Hidetoshi Ishida, Tetsuzo Ueda, 2010, IEEE Transactions on Electron Devices.

Torque-based control of whirling motion in a rotating electric machine under mechanical resonance

Takashi Hikihara, Kaoru Inoue, Toshimitsu Ushio, 2003, IEEE Trans. Control. Syst. Technol..

0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metal

T. Matsuno, Kaoru Inoue, A. Tamura, 1996 .