U. Konig

发表

SiGe devices and circuits: where are advantages over III/V ?

A. Schuppen, Ulf Konig, Andreas Gruhle, 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

Multi emitter finger SiGe-HBTs with f/sub max/ up to 120 GHz

U. Konig, A. Gruhle, A. Schuppen, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/

Hermann Schumacher, A. Schuppen, U. Erben, 1995, Proceedings of International Electron Devices Meeting.

90 GHz f max SiGe-HBTs

U. Konig, A. Gruhle, A. Schuppen, 1994, 52nd Annual Device Research Conference.

SiGe-HBTs with high fT at moderate current densities

A. Schuppen, Ulf Konig, U. Erben, 1994 .

A low temperature gate oxide process for n-channel SiGe modulation doped field effect transistors

T. Zijlstra, U. Konig, B. Bozon, 1997 .

High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

Ulf Konig, H. von Känel, U. Konig, 2000 .

LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs

U. Konig, T. Hackbarth, H. Känel, 2005 .

90 GHz f/sub T/ SiGe HFET with fully optical self-aligned sub 100 nm gate

U. Konig, T. Hackbarth, M. Zeuner, 2002, 60th DRC. Conference Digest Device Research Conference.

Very low resistance Ni_AuGe_Ni contacts to n-GaAs

K. Heime, U. Konig, E. Kohn, 1974 .

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

U. Konig, T. Hackbarth, G. Höck, 2004 .

Reduced 1/f noise at 293 K in 0.55 /spl mu/m p-Si/sub 0.3/Ge/sub 0.7/ hetero-MOSFETs

U. Konig, T. Hackbarth, M. Myronov, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

High performance 0.25 /spl mu/m T-gate SiGe-n-MODFET

M. Zeuner, F. Aniel, T. Hackbarth, 1999, 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).

Low temperature analysis of 0.25 T-Gate SiGe n-MODFET

N. Zerounian, U. Konig, A. Gruhle, 1999, 29th European Solid-State Device Research Conference.

High frequency SiGe heterostructure devices

U. Konig, A. Gruhle, 1997, 1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Random and Ordered Macropore Formation in p-Type Silicon

H. Presting, U. Konig, V. Starkov, 2002 .

Molecular beam epitaxy of silicon: Effects of heavy Sb doping

U. Konig, E. Kasper, H. Herzog, 1981 .

Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation

U. Konig, H. Kibbel, J. Kuchenbecker, 2001 .

Highly efficient to hydrogen permeability palladium membranes supported in porous silicon

H. Presting, U. Konig, V. Starkov, 2005 .

SiGe hetero FETs on silicon at cryogenic temperature

P. Crozat, L. Giguerre, N. Zerounian, 2002, Proceedings of the 5th European Workshop on Low Temperature Electronics.

Strained Si HFETs for microwave applications: state-of-the-art and further approaches

Frédéric Aniel, Siegfried Mantl, Giovanni Isella, 2004 .

Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition

U. Konig, T. Hackbarth, H. Känel, 2003 .

Si/SiGe field-effect transistors*

U. Konig, G. Höck, M. Gluck, 1998 .

Future nanotechnology developments for automotive applications

Hartmut Presting, U. Konig, H. Presting, 2003 .

CoSi2 and TiSi2 for SiSiGe heterodevices

U. Konig, M. Eizenberg, C. Cytermann, 1995 .

Dopants effects on the interfacial reaction between Co and strained Si0.8Ge0.2 layers

U. Konig, M. Eizenberg, M. Fastow, 1998 .

Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1−xGex/Si heterostructure

U. Konig, M. Eizenberg, M. Fastow, 1998 .

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Giovanni Isella, Daniel Chrastina, Thomas Hackbarth, 2004 .

Si–MBE: Growth and Sb doping

U. Konig, E. Kasper, H. Kibbel, 1979 .

p-type Ge-channel MODFETs with high transconductance grown on Si substrates

F. Schaffler, U. Konig, U. Konig, 1993, IEEE Electron Device Letters.

MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/

U. Erben, H. Kibbel, A. Gruhle, 1992, IEEE Electron Device Letters.

Differential molecular beam epitaxy for multilayered bipolar devices

U. Konig, F. Schäffler, J. Luy, 1990 .

SiGe and GaAs as competitive technologies for RF-applications

U. Konig, U. Konig, 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

Porous silicon for micro-sized fuel cell reformer units

Hartmut Presting, Ulf Konig, Johannes Konle, 2004 .

Silicon Germanium Heterobipolar Transistor Structures with Extremely High Base Doping

U. Konig, E. Kasper, Horst Kibbel, 1991 .

Homogeneity of Wet Oxidation by RTP

U. Konig, M. Glück, J. Hersener, 1994 .

1-W SiGe power HBTs for mobile communication

U. Seiler, A. Schuppen, D. Wandrei, 1996, IEEE Microwave and Guided Wave Letters.

SiGe HBTs and HFETs

U. Konig, H. Dämbkes, 1995 .

Operating CMOS after a Si-MBE process: a precondition for future three-dimensional circuits

F. Schaffler, T. Kiss, U. Konig, 1990, IEEE Electron Device Letters.

Temperature distribution in Gunn diodes and GaAs MESFET's determined by micro-photoluminescence

U. Langmann, U. Konig, 1978, IEEE Transactions on Electron Devices.

Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance

B. Holländer, S. Mantl, L. Giguerre, 2004 .

Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

S. Mantl, U. Konig, T. Hackbarth, 2002, IEEE Electron Device Letters.

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Paul Crozat, R. Adde, Frédéric Aniel, 2003 .

Low temperature analysis of 0.25 /spl mu/m T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's

R. Adde, M. Zeuner, Frédéric Aniel, 2000 .

Low Temperature Analysis of 0.25 m T-Gate Strained Si/Si Ge N-MODFET's

N. Zerounian, U. Konig, T. Hackbarth, 2000 .

MBE-Grown Si/SiGe HBT's with High

U. Konig, A. Gruhle, E. Kasper, 1992 .

Design rules for n-type SiGe hetero FETs

R. Hagelauer, Timm Ostermann, M. Gluck, 1997 .

p-type SiGe channel modulation doped field-effect transistors with post-evaporation patterned submicrometre Schottky gates

U. Konig, F. Schäffler, 1993 .

N-channel Si/SiGe MODFETs: effects of rapid thermal activation on the DC performance

U. Konig, F. Schaffler, A. J. Boers, 1993, IEEE Electron Device Letters.

Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance

U. Konig, E. Kasper, F. Schäffler, 1992 .

n- and p-Type SiGe HFETs and circuits

M. Zeuner, Timm Ostermann, M. Gluck, 1999 .

N- and p-type Si-SiGe hetero FETs

U. Konig, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).