Robert Langer

发表

(Invited) Generation-Recombination Noise in Advanced CMOS Devices

Cor Claeys, Jerome Mitard, Eddy Simoen, 2016 .

Entrepreneurship in Biomaterials

Robert Langer, Mark Levin, Jason Fuller, 2013 .

Reliability aspects ofGaN-HEMTsoncomposite substrates

Augusto Tazzoli, Robert Langer, Alessandro Chini, 2008 .

First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs

Dimitris Pavlidis, Xin Zhu, Robert Langer, 2003 .

How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

Niamh Waldron, Robert Langer, Andreas Schulze, 2018, Semiconductor Science and Technology.

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Gaudenzio Meneghesso, C. Gaquiere, Sylvain Delage, 2008 .

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Bin Tian, Robert Langer, Kathy Barla, 2016 .

Gaining an edge with nano-ridges

Robert Langer, Marianna Pantouvaki, Dries Van Thourhout, 2018 .

Microwave power performance on AlGaN/GaN HEMTs on composite substrate

Christophe Gaquiere, Nicolas Defrance, Robert Langer, 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

(Invited) Integration of III/V Hetero-Structures By Selective Area Growth on Si for Nano- and Optoelectronics

Robert Langer, Kathy Barla, Bernardette Kunert, 2016 .

AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield

Jenshan Lin, Robert Langer, Stephen J. Pearton, 2007 .

Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded InxGa1−xAs buffers on GaAs

Robert Langer, Matty Caymax, Bernardette Kunert, 2016 .