F. Mondon

Electro-optical reliability characterization of advanced Cu/low-k interconnects

G. Reimbold, C. Guedj, J.F. Guillaumond, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Current trends in the electrical characterization of low-k dielectrics

F. Mondon, A. M. Ionescu, G. Reimbold, 1999, CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389).

Hot carrier self convergent programming method for multi-level flash cell memory

G. Reimbold, F. Mondon, Jean-Michel Hartmann, 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

Electrical characterisation and reliability of HfO2 and Al2O3-HfO2 MIM capacitors

F. Mondon, S. Blonkowski, 2003, Microelectron. Reliab..

Effect of the discharging and recharging of the stress generated oxide charge in metal–oxide–semiconductor capacitors on the low field leakage current

F. Mondon, A. Meinertzhagen, C. Petit, 1998 .

A New Intrinsic charge loss analysis on 16 Mb EPROM

F. Mondon, B. Guillaumot, P. Mazoyer, 1993, ESSDERC '93: 23rd European solid State Device Research Conference.

Charge trapping/detrapping in Si3N4/SiO2 stacked dielectric layer deposited by LPCVD with in situ HF vapor cleaning

F. Mondon, F. Martin, B. Guillaumot, 1993, ESSDERC '93: 23rd European solid State Device Research Conference.