V. Hoel

发表

Improved Monte Carlo algorithm for the simulation of /spl delta/-doped AlInAs/GaInAs HEMTs

A. Cappy, H. Happy, J. Mateos, 2000 .

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

C. Gaquiere, N. Vellas, Sylvain Delage, 2005 .

Metamorphic In Al As/In Ga As HEMT's on GaAs Substrate

Y. Cordier, A. Cappy, H. Happy, 1998 .

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

Christian Dua, Ali Soltani, J. Laureyns, 2007 .

Stochastic model for action potential simulation including ion shot noise

A. Cappy, J. Mateos, T. González, 2017 .

Static measurements of GaN MESFETs on [111] Si substrates

C. Gaquière, V. Hoel, Y. Guhel, 2001 .

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, 2010 IEEE International Reliability Physics Symposium.

MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

J. Massies, S. Delage, Y. Cordier, 2003 .

Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Y. Cordier, J. Mateos, T. González, 2017 .

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Gaudenzio Meneghesso, C. Gaquiere, Sylvain Delage, 2008 .

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

Y. Cordier, V. Hoel, F. Lecourt, 2015, IEEE Electron Device Letters.

Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics

V. Hoel, A. Soltani, F. Lecourt, 2013 .

High microwave and noise performance of 0.17-/spl mu/m AlGaN-GaN HEMTs on high-resistivity silicon substrates

G. Dambrine, J. Massies, Y. Cordier, 2004, IEEE Electron Device Letters.

AlGaN/GaN HEMTs on Resistive Si(111) Substrate: From Material Assessment to RF Power Performances

J. Massies, S. Delage, Y. Cordier, 2003 .

75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency

A. Vescan, V. Hoel, M. Heuken, 2011, 2011 6th European Microwave Integrated Circuit Conference.

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

V. Hoel, E. Pichonat, J. De Jaeger, 2011, IEEE Electron Device Letters.

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

A. Vescan, V. Hoel, M. Heuken, 2011 .

Microwave power capabilities of InAlN/GaN HEMTs

S. Delage, C. Gaquière, J. Carlin, 2010, 18-th INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS.

Temperature dependent degradation modes in AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, The 5th European Microwave Integrated Circuits Conference.

First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

Y. Cordier, B. Damilano, V. Hoel, 2016, IEEE Electron Device Letters.

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Y. Cordier, S. Chenot, V. Hoel, 2013, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

J. Massies, S. Joblot, Y. Cordier, 2007, IEEE Transactions on Electron Devices.

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

V. Hoel, H. Maher, F. Lecourt, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

Y. Cordier, C. Gaquière, N. Vellas, 2003, IEEE Microwave and Wireless Components Letters.

Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

A. Cappy, J. Mateos, T. González, 1999 .

High-power AlGaN/GaN HEMTs on resistive silicon substrate

J. Massies, Y. Cordier, C. Gaquière, 2002 .

Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

C. Gaquière, E. Kohn, V. Hoel, 2002 .

Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates

G. Meneghesso, E. Zanoni, V. Hoel, 2007, 2007 IEEE International Electron Devices Meeting.

Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

V. Hoel, H. Maher, A. Cutivet, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

A. Vescan, V. Hoel, M. Heuken, 2012 .

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Y. Cordier, J. Mateos, T. González, 2022, Sensors.

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

J. Brault, Y. Cordier, S. Chenot, 2018, IEEE Photonics Technology Letters.

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2009, Microelectron. Reliab..

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

V. Hoel, A. Soltani, R. Langer, 2010 .

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

S. Delage, C. Gaquiere, D. Ducatteau, 2006, IEEE Electron Device Letters.

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

C. Gaquiere, D. Ducatteau, J.C. De Jaeger, 2004, IEEE Electron Device Letters.

A 4-fJ/Spike Artificial Neuron in 65 nm CMOS Technology

Christophe Loyez, Alain Cappy, Eric Mercier, 2017, Front. Neurosci..

AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

H. Maher, P. Frijlink, S. Bouzid-Driad, 2013, IEEE Electron Device Letters.

Monte Carlo simulator for the design optimization of low-noise HEMTs

A. Cappy, J. Mateos, T. González, 2000 .

The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter

Henri Happy, Alain Cappy, Sylvie Lepilliet, 2000 .

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

R. Quéré, S. Delage, J. Persio, 2004 .

LP-MOCVD growth of GaAlN/GaN heterostructures on Silicon Carbide. Application to HEMT's devices.

S. Delage, J. Persio, C. Gaquière, 2003 .

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

C. Brylinski, H. Gerard, J.C. De Jaeger, 2007, 2007 European Microwave Integrated Circuit Conference.

Optimization of AlGaN/GaN HEMT Schottky contact for microwave applications

V. Hoel, H. Maher, J. De Jaeger, 2012, 2012 7th European Microwave Integrated Circuit Conference.

Metamorphic In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As HEMTs on GaAs substrate

A. Cappy, S. Lepilliet, H. Happy, 1999, IEEE Electron Device Letters.

A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics

Emmanuel Dubois, Daniel Gloria, Francois Danneville, 2013 .

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

Emmanuel Dubois, Daniel Gloria, Francois Danneville, 2013 .

94-GHz low noise amplifier on InP in coplanar technology

Henri Happy, Alain Cappy, S. Boret, 1999 .

Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes

J. Brault, Y. Cordier, S. Chenot, 2016, IEEE Photonics Technology Letters.