H. Fujishiro

发表

Theoretical study of performance limits in nano-scale InAs HEMTS based on quantum-corrected Monte Carlo method

T. Takegishi, H. Watanabe, R. Yamada, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Quantum-corrected Monte Carlo analysis of scaling behavior of nano-scale InGaAs high electron mobility transistors

Jesus A. del Alamo, Hiroki I. Fujishiro, J. Alamo, 2008 .

Monte Carlo study of strain effect on high field electron transport in InAs and InSb

S. Hara, H. Fujishiro, H. Nishino, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

A Sub-10 ps/gate Direct-Coupled FET Logic Circuit with 0.2 µm-Gate GaAs MESFET

H. Fujishiro, Hiromi Tsuji, Hiroshi Nakamura, 1990 .

A 36 GHz 1/8 frequency divider with GaAs BP-MESFETs

K. Tanaka, Seiji Nishi, M. Shikata, 1990, International Technical Digest on Electron Devices.

60 GHz flip-chip assembled MIC design considering chip-substrate effect

K. Nagai, H. Fujishiro, Y. Arai, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

Impact of electron rebound from drain on drive current in nano-scale InGaAs MOSFETs

S. Hara, H. Fujishiro, Hisanao Watanabe, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Characterization of ultrahigh-speed pseudomorphic InGaAs/AlGaAs inverted high electron mobility transistors

H. Fujishiro, Hiromi Tsuji, S. Nishi, 1992 .

Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling Microscopy

S. Hara, H. Fujishiro, H. Miki, 2011 .

A 20-Gb/s flip-flop circuit using direct-coupled FET logic

Seiji Nishi, Masahiro Akiyama, M. Shikata, 1993 .

Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier

H. Fujishiro, Hiroshi Nakamura, S. Nishi, 1991 .

Delay Time Analysis of Graded Gate Field-Plate AlGaN/GaN High Electron Mobility Transistors Using Monte Carlo Simulation

S. Hara, H. Fujishiro, K. Hara, 2013 .

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

T. Gotow, T. Yasuda, H. Fujishiro, 2017 .

Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si(001) substrate by molecular beam epitaxy

I. Watanabe, A. Kasamatsu, S. Hara, 2022, Journal of Vacuum Science & Technology A.

Growth conditions and device performance of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistor

H. Fujishiro, S. Nishi, M. Sato, 1995 .

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

H. Fujishiro, S. Fujikawa, Takuto Takahashi, 2017 .

Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si

H. Fujishiro, T. Maeda, Kazuaki Oishi, 2020, physica status solidi (a).

0.2 mu m gate pseudomorphic inverted HEMT for high speed digital ICs

K. Tanaka, H. Fujishiro, Hiromi Tsuji, 1991, [1991] GaAs IC Symposium Technical Digest.

Study of H:Si(113)2*2 Structure by Scanning Tunneling Microscopy and Ab Initio Calculation

K. Fuse, Toru Suzuki, S. Hara, 2010 .

Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD

H. Hirayama, H. Fujishiro, W. Terashima, 2019, Journal of Crystal Growth.

Scanning tunneling microscopy and ab initio studies of precursor states of Ga-induced cluster on Si(0 0 1) surface

S. Hara, H. Fujishiro, H. Miki, 2009 .

Behavior of Ga atoms on Si(001) surface at high temperature

S. Hara, H. Fujishiro, Hitoshi Torii, 2005 .

Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(1 0 0)

I. Watanabe, S. Hara, H. Fujishiro, 2015 .

Study of Ga Adsorption Structure on Ni/Si(100) Surface by Scanning Tunneling Microscopy

Toru Suzuki, S. Hara, H. Fujishiro, 2010 .

Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy

I. Watanabe, A. Kasamatsu, S. Hara, 2019, Journal of Crystal Growth.

Effect of low‐temperature‐grown GaSb layer on formation of high‐density and small GaSb islands on Si(100) substrate

I. Watanabe, S. Hara, H. Fujishiro, 2016 .

Growth process and morphology of three‐dimensional GaSb islands on Ga/Si(111)

S. Hara, H. Fujishiro, K. Yoshiki, 2013 .

Study of Si(0 0 1)4 × 2-Ga structure by scanning tunneling microscopy and ab initio calculation

S. Hara, H. Fujishiro, H. Miki, 2007 .

Pseudomorphic inverted HEMT suitable to low supplied voltage application

Hiroshi Nakamura, H. I. Fujishiro, M. Kasashima, 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

High and broadband sensitivity front-side illuminated InGaAs photo field-effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate

H. Fujishiro, T. Koida, T. Maeda, 2021, Applied Physics Letters.

Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures

T. Gotow, T. Yasuda, H. Fujishiro, 2015 .