H. Arima

Electron beam testing of VLSI circuits assisted by focused ion beam etching

H. Morimoto, H. Arima, T. Matsukawa, 1986 .

Source-to-drain nonuniformly doped channel (NUDC) MOSFET structures for high current drivability and threshold voltage controllability

Hideaki Arima, Takayuki Matsukawa, A. Hachisuka, 1992 .

A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET for high current drivability and threshold voltage controllability

H. Arima, T. Matsukawa, A. Hachisuka, 1990, International Technical Digest on Electron Devices.

A self-timed dynamic sensing scheme for 5V only multi-Mb flash E/sup 2/PROMs

H. Arima, T. Yoshihara, M. Hayashikoshi, 1989, Symposium 1989 on VLSI Circuits.

Self-timed dynamic sensing scheme for 5 V only multi-Mb flash E2PROMs

Masanori Hayashikoshi, Tsutomu Yoshihara, Takeshi Nakayama, 1989 .

A 45ns 64Mb DRAM With A Merged Match-line Test Architecture

H. Arima, S. Kayano, S. Mori, 1991, 1991 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

Plasma Anodic Nitridation of Silicon in N 2 ‐ H 2 System

N. Tsubouchi, H. Arima, T. Matsukawa, 1984 .