G. Yeap

发表

Variation-Aware Figure of Merit for Integrated Circuit in Near-Threshold Region

Seong-Ook Jung, Younghwi Yang, Geoffrey Yeap, 2015, IEEE Transactions on Electron Devices.

Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides

K. Ahmed, Miryeong Song, M. Lin, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Approaches to Area Efficient High-Performance Voltage-Controlled Oscillators in Nanoscale CMOS

K. O. Kenneth, G. Yeap, Amit Jha, 2021, IEEE Transactions on Microwave Theory and Techniques.

Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

M. Moosa, H. Tseng, G. Miner, 2002, IEEE Electron Device Letters.

Plasma doping for shallow junctions

D. Lenoble, M. Lin, G. Yeap, 1999 .

Effect of Cu damascene metallization on gate SiO/sub 2/ plasma damage

G. Yeap, Q. Xiang, D. Bang, 1998, 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).

5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications

Jun He, R. Chen, Geoffrey Yeap, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

A Reliability Enhanced 5nm CMOS Technology Featuring 5th Generation FinFET with Fully-Developed EUV and High Mobility Channel for Mobile SoC and High Performance Computing Application

J.C. Liu, Jun He, R. Lu, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Smart mobile SoCs driving the semiconductor industry: Technology trend, challenges and opportunities

Geoffrey Yeap, G. Yeap, 2013, 2013 IEEE International Electron Devices Meeting.

−197dBc/Hz FOM 4.3-GHz VCO Using an addressable array of minimum-sized nmos cross-coupled transistor pairs in 65-nm CMOS

Ali Ahmadi, Yiorgos Makris, K. O. Kenneth, 2016, 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits).

Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high-K gate dielectrics

Ming-Ren Lin, M. Lin, G. Yeap, 1998 .

RF and mixed-signal performances of a low cost 28nm low-power CMOS technology for wireless system-on-chip applications

Ying Chen, Ming-Ta Yang, Yang Du, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Leakage current in low standby power and high performance devices: trends and challenges

Geoffrey C.-F. Yeap, G. Yeap, 2002, ISPD '02.

Challenges and opportunities of chip package interaction with fine pitch Cu pillar for 28nm

Yangyang Sun, Lily Zhao, Geoffrey Yeap, 2014, 2014 IEEE 64th Electronic Components and Technology Conference (ECTC).

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications

Hidehiro Fujiwara, Tsung-Yung Jonathan Chang, Hung-Jen Liao, 2021, IEEE Journal of Solid-State Circuits.

15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications

Hidehiro Fujiwara, Hung-Jen Liao, Yen-Huei Chen, 2020, 2020 IEEE International Solid- State Circuits Conference - (ISSCC).

Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology

Hanwool Jeong, Seong-Ook Jung, Joseph Wang, 2016, IEEE Transactions on Circuits and Systems I: Regular Papers.

Read-Preferred SRAM Cell With Write-Assist Circuit Using Back-Gate ETSOI Transistors in 22-nm Technology

Hanwool Jeong, Seong-Ook Jung, J. Wang, 2012, IEEE Transactions on Electron Devices.

Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology

Seong-Ook Jung, Juhyun Park, Joseph Wang, 2015, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Design of a 22-nm FinFET-Based SRAM With Read Buffer for Near-Threshold Voltage Operation

Hanwool Jeong, Seong-Ook Jung, Juhyun Park, 2015, IEEE Transactions on Electron Devices.

FinFET SRAM Optimization With Fin Thickness and Surface Orientation

Mingu Kang, S C Song, S H Woo, 2010, IEEE Transactions on Electron Devices.

Low power technology/circuit co-development for advanced mobile devices

Geoffrey Yeap, G. Yeap, 2010, 2010 IEEE International Conference on Integrated Circuit Design and Technology.

High performance partially depleted SOI using spike RTA

L. Kang, G. Yeap, S. Venkatesan, 2003, 2003 IEEE International Conference on SOI.

Improved device variability in scaled MOSFETs with deeply retrograde channel profile

Geoffrey Yeap, Joseph Wang, Frank Yang, 2014, Microelectron. Reliab..

Holistic technology optimization and key enablers for 7nm mobile SoC

S. C. Song, D. Yang, K. Rim, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).