Tom C. Lee

Electromigration study of Al and Cu metallization using WLR isothermal method

T. Sullivan, Tom C. Lee, M. Ruprecht, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Comparison of isothermal, constant current and SWEAT wafer level EM testing methods

D. Tibel, T. D. Sullivan, T. Sullivan, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

Basic BEOL parameters from isothermal wafer level electromigration testing

Timothy D. Sullivan, D. Tibel, T. Sullivan, 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

Line depletion electromigration characterization of Cu interconnects

Baozhen Li, Timothy D. Sullivan, Tom C. Lee, 2004 .

Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB)

Fen Chen, Jeffrey P. Gambino, Timothy D. Sullivan, 2009, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Performance and Reliability of Thick Cu Interconnects for RF and Analog/Mixed Signal Technology

C. Cabral, J. Gambino, Tom C. Lee, 2013 .

Effect of Dielectric Capping Layer on TDDB Lifetime of Cu Interconnects in SiOF

J. Gambino, M. Shinosky, Fen Chen, 2009 .

Stress migration in a copper - Aluminum hybrid technology

G. U'ren, J. Gambino, C. Christiansen, 2014, 2014 IEEE International Reliability Physics Symposium.

Reliability challenges for copper interconnects

Baozhen Li, Timothy D. Sullivan, Dinesh Badami, 2004, Microelectron. Reliab..